ST EMIF07-LCD03F3 User Manual

EMIF07-LCD03F3

7-line IPAD™, EMI filter and ESD protection

Features

■High attenuation in the mobile frequency range (typically better than -40 dB from 900 MHz to 2 GHz)

■Very low clamping voltage

■Low line capacitance (30 pF max) suitable for high-speed interfaces

■Maximum rise and fall time: 6 ns (10% - 90%)

■Compliant with high speed data rate

■Lead-free Flip-Chip package in 400 µm pitch

■Very thin package: 0.6 mm thickness

Benefits

■High efficiency in EMI filtering

■High bandwidth: typically 200 MHz at -3 dB

■80% space saving versus discrete solution (BOM reduction)

■High reliability offered by monolithic integration

■High reduction of parasitic elements through integration and wafer level packaging

Complies with the following standards

■IEC 61000-4-2 level 4 on inputs and outputs:

–15 kV (air discharge)

–8 kV (contact discharge)

Flip Chip (18 bumps)

Description

The EMIF07-LCD03F3 is a 7-line highly integrated L/C filter designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interference.

The EMIF07-LCD03F3 Flip-Chip packaging means the package size is equal to the die size.

This LC filter includes ESD protection circuitry, which prevents damage to the protected device when subjected to ESD surges up ±15 kV.

Figure 1. Pin layout (bump side)

Applications

Displays and cameras where EMI filtering in ESD

sensitive equipment is required:

Figure 2. Device configuration

■ Mobile phones and PDAs

■ Personal and home entertainment (portable Audio, DVD players, LCD TVs)

■ Portable navigation devices

■ Digital still cameras

■ Portable gaming systems

TM: IPAD is a trademark of STMicroelectronics.

December 2008

Rev 1

1/7

www.st.com

Characteristics	EMIF07-LCD03F3

1 Characteristics

Table 1.		Absolute maximum ratings (Tamb = 25 °C)
Symbol			Parameter and test conditions				Value			Unit
		Input and output pins:
	Vpp	ESD discharge IEC 610000-4-2, air discharge						±15		kV
		ESD discharge IEC 610000-4-2, contact discharge						±15
	Tj	Maximum junction temperature						125		°C
	Top	Operating temperature range					-40 to +85			°C
	Tstg	Storage temperature range					-55 to 150			°C
Table 2.		Electrical characteristics (Tamb = 25 °C)
Symbol				Parameters
	VBR	Breakdown voltage
	IRM	Leakage current @ VRM
	VRM	Stand-off voltage
	RI/O	Series resistance between input and output
	Cline	Line capacitance
Symbol				Test conditions			Min	Typ	Max	Unit
	VBR	IR = 1 mA					14			V
	IRM	VRM = 3 V per line							200	nA
	RI/O	Tolerance ± 20%					100	125	150	Ω
	Cline	Vline = 0 V, VOSC = 30 mV, F =1 MHz							30	pF
Figure 3. Attenuation versus frequency (all					Figure 4. Analog cross talk versus frequency
GND bumps connected)					(all GND bumps connected)
0 S21 (dB)					0 XTalk (dB)
-5					-10
-10					-20
-15
-20					-30
-25					-40
-30					-50
-35
					-60
-40
-45					-70
-50					-80
-55		F (Hz)			-90
-60
100k	1M	10M	100M	1G	-100			F (Hz)
	I1-O1		I2-O2		-110
	I3-O3		I4-O4
	I5-O5		I6-O6		100k	1M	10M	100M	1G
	I7-O7				I1O2			I1O7

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EMIF07-LCD03F3	Characteristics

Figure 5. ESD response under IEC61000-4-2 Figure 6. conditions, VPP = +15 kV air

discharge

ESD response under IEC61000-4-2 conditions, VPP = -15 kV air discharge

Figure 7. Line capacitance versus applied voltage

	Cline (pF)
30.00
25.00	F=1 MHz
	VOSC = 30 mVRMS
20.00	TJ = 25° C
15.00
10.00
5.00	Vline (V)
0.00

0 1 2 3 4 5

Figure 8. Typical rise and fall time: input	Figure 9. Typical rise and fall time: output
voltage	voltage
	OUTPUT VOLTAGE
INPUT VOLTAGE	X: 10ns/DIV
	Y: 1V/DIV
X: 10 ns/DIV	trise10% -90% = 3.45 ns
Y: 1 V/DIV	tfall 90%-10% = 4.09 ns
trise10% -90% = 3.34 ns
tfall 90%-10% = 3.65 ns

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