ST EMIF07-LCD03F3 User Manual

7-line IPAD™, EMI filter and ESD protection

Features

■ High attenuation in the mobile frequency range

(typically better than -40 dB from 900 MHz to
2GHz)

■ Very low clamping voltage

■ Low line capacitance (30 pF max) suitable for

high-speed interfaces

■ Maximum rise and fall time: 6 ns (10% - 90%)

■ Compliant with high speed data rate

■ Lead-free Flip-Chip package in 400 µm pitch

■ Very thin package: 0.6 mm thickness

Benefits

EMIF07-LCD03F3

Flip Chip

(18 bumps)

Description

The EMIF07-LCD03F3 is a 7-line highly
integrated L/C filter designed to suppress
EMI/RFI noise in all systems subjected to
electromagnetic interference.

■ High efficiency in EMI filtering

■ High bandwidth: typically 200 MHz at -3 dB

■ 80% space saving versus discrete solution

(BOM reduction)

■ High reliability offered by monolithic integration

■ High reduction of parasitic elements through

integration and wafer level packaging

Complies with the following standards

■ IEC 61000-4-2 level 4 on inputs and outputs:

– 15 kV (air discharge)
– 8 kV (contact discharge)

Applications

Displays and cameras where EMI filtering in ESD
sensitive equipment is required:

■ Mobile phones and PDAs

■ Personal and home entertainment (portable

Audio, DVD players, LCD TVs)

■ Portable navigation devices

■ Digital still cameras

■ Portable gaming systems

TM: IPAD is a trademark of STMicroelectronics.

The EMIF07-LCD03F3 Flip-Chip packaging
means the package size is equal to the die size.

This LC filter includes ESD protection circuitry,
which prevents damage to the protected device
when subjected to ESD surges up ±15 kV.

Figure 1. Pin layout (bump side)

Figure 2. Device configuration

December 2008 Rev 1 1/7

www.st.com

7

Characteristics EMIF07-LCD03F3

1 Characteristics

Table 1. Absolute maximum ratings (T

Symbol Parameter and test conditions Value Unit

Input and output pins:

V

ESD discharge IEC 610000-4-2, air discharge

pp

ESD discharge IEC 610000-4-2, contact discharge

amb

= 25 °C)

±15
±15

kV

T

T

T

Table 2. Electrical characteristics (T

Maximum junction temperature 125 °C

j

Operating temperature range -40 to +85 °C

op

Storage temperature range -55 to 150 °C

stg

Symbol Parameters

V

BR

I

RM

V

RM

R

I/O

C

line

Breakdown voltage

Leakage current @ V

RM

Stand-off voltage

Series resistance between input and output

Line capacitance

Symbol Test conditions Min Typ Max Unit

V

BR

I

RM

R

I/O

C

line

IR = 1 mA 14 V

VRM = 3 V per line 200 nA

Tolerance ± 20% 100 125 150 Ω

Vline = 0 V, V

= 30 mV, F =1 MHz 30 pF

OSC

Figure 3. Attenuation versus frequency (all

GND bumps connected)

S21 (dB)

0

-5

-10

-15

-20

-25

-30

-35

-40

-45

-50

-55

-60
100k 1M 10M 100M 1G

I1-

O1

-

I3

O3

-

I5

O5

-

I7 O7

F (Hz)

-

I2

O2

-

I4

O4

-

O6

I6

= 25 °C)

amb

Figure 4. Analog cross talk versus frequency

(all GND bumps connected)

XTalk (dB)

0

-10

-20

-30

-40

-50

-60

-70

-80

-90

-100

-110
100k 1M 10M 100M 1G

I1-O2 I1- O7

F (Hz)

2/7

EMIF07-LCD03F3 Characteristics

Figure 5. ESD response under IEC61000-4-2

Figure 6. ESD response under IEC61000-4-2
conditions, VPP = +15 kV air
discharge

Figure 7. Line capacitance versus applied voltage

C

(pF)

line

30.00

25.00

20.00

15.00

10.00

5.00

0.00
012345

V

line

(V)

conditions, VPP = -15 kV air
discharge

F=1 MHz

V

= 30 mV

OSC

TJ= 25° C

RMS

Figure 8. Typical rise and fall time: input

voltage

INPUT VOLTAGE

X: 10 ns/DIV
Y:1 V/DIV

t

10% -90% = 3.34 ns

rise

t

90%-10% = 3.65 ns

fall

Figure 9. Typical rise and fall time: output

voltage

OUTPUT VOLTAGE

X: 10ns/DIV
Y: 1V/DIV
t

10% -90% = 3.45 ns

rise
t

90%-10% = 4.09 ns

fall

3/7