ST EMIF06-VID01F2 User Manual

EMIF06-VID01F2

6-line IPAD™, low capacitance EMI filter and ESD protection

Features

■High efficiency EMI filtering (-40 dB @ 900 MHz)

■Low line capacitance suitable for high speed data bus

■Low serial resistance for camera impedance adaptation

■Lead-free package

■Optimized PCB space occupation: 2.92 mm x 1.29 mm

■Very thin package: 0.65 mm

■High efficiency in ESD suppression on inputs pins (IEC 61000-4-2 level 4)

■High reliability offered by monolithic integration

■High reduction of parasitic elements through integration and wafer level packaging

Flip Chip (15 bumps)

Figure 1. Pin layout (bump side)

9	8	7	6	5	4	3	2	1
I6		I5	I4		I3	I2		I1	A
	Gnd			Gnd			Gnd		B
O6		O5	O4		O3	O2		O1	C

Figure 2. Device configuration

Complies with the following standards:

■IEC 61000-4-2 Level 4 on input pins

–15 kV (air discharge)

–8 kV (contact discharge)

■MIL STD 883E - Method 3015-6 Class 3

Application

Where EMI filtering in ESD sensitive equipment is required:

■LCD and camera for mobile phones

■Computers and printers

■Communication systems

■MCU board

R

Input

Output

R = 100Ω

CLINE = 16pF typ. @ 3V

Description

The EMIF06-VID01F2 is a 6-line highly integrated array designed to suppress EMI / RFI noise in all systems subjected to electromagnetic interference.

The EMIF06-VID01F2 Flip Chip packaging means the package size is equal to the die size.

Additionally, this filter includes ESD protection circuitry which prevents damage to the protected device when subjected to ESD surges up to

15 kV.

April 2008

Rev 2

1/7

www.st.com

Characteristics	EMIF06-VID01F2

1 Characteristics

Table 1.	Absolute ratings (limiting values)
Symbol	Parameter and test conditions	Value	Unit
Tj	Maximum junction temperature	125	°C
Top	Operating temperature range	- 40 to + 85	°C
Tstg	Storage temperature range	- 55 to + 150	°C

Table 2. Electrical characteristics (Tamb = 25 °C)

Symbol	Parameter
VBR	Breakdown voltage
IRM	Leakage current @ VRM
VRM	Stand-off voltage
R	Series resistance between input and output
Cline	Input capacitance per line

I

IR

VBR VRM IRM

V

IRM VRM VBR

IR

Symbol	Test conditions	Min.	Typ.	Max.	Unit
VBR	IR = 1 mA	6	8	10	V
IRM	VRM = 3 V per line			500	nA
R	I = 10 mA	80	100	120	Ω
Cline	VR = 3 V dc, 1 MHz VOSC = 30 mV		16	19	pF

2/7

EMIF06-VID01F2									Characteristics
Figure 3. S21 (dB) attenuation measurement					Figure 4. Analog crosstalk measurement
0					0
					dB
dB					-10
-10					-20
					-30
-20
					-40
-30					-50
					-60
-40					-70
					-80
-50
					-90
-60					-100
100k	1M	10M	100M	1G	100k	1M	10M	100M	1G
			f/Hz					f/Hz

Figure 5. ESD response to IEC 61000-4-2	Figure 6. ESD response to IEC 61000-4-2
(+15 kV air discharge) on one input	(-15 kV air discharge) on one input
(Vin) and on one output (Vout)	(Vin) and on one output (Vout)

Input

10V/d

Input 10V/d

Output

10V/d

Output 10V/d

200ns/d

200ns/d

Figure 7. Junction capacitance versus reverse voltage applied (typical values)

CLINE(pF)

28
26
24
22
20
18
16
14
12
10
0.0	0.5	1.0	1.5	2.0	2.5	3.0

VLINE(V)

3/7