ST EMIF06-VID01C2 User Manual

IPAD™

6 line low capacitance EMI filter and ESD protection

Main application

Where EMI filtering in ESD sensitive equipment is
required:

■ LCD and camera for mobile phones

■ Computers and printers

■ Co mmunic ation s ystem s

■ MCU board

EMIF06-VID01C2

®

Description

The EMIF06-VID01C2 is a 6 line highly integrated
device designed to suppress EMI/RFI noise in all
systems subjected to electromagnetic
interference. The Flip-Chip packaging means the
package size is equal to the die size.

This filter includes ESD protection circuitry, which
prevents damage to the application when it is
subjected to ESD surges up to 15 kV.

Benefits

■ High efficiency EMI filtering (-40db @ 900MHz)

■ Low line capacitance suitable for high speed

data bus

■ Low serial resistance for camera impedance

adaptation

■ Optimized PCB space consuming:

2.92mm x 1.29mm

■ Very thin package: 0.69 mm

■ High efficiency in ESD suppression on inputs

pins (IEC61000-4-2 level 4)

■ High reliability offered by monolithic integration

■ High reducing of parasitic elements through

integration and wafer level packaging

■ Lead free package

Lead free coated Flip-Chip

(15 Bumps)

Order code

Part Number Marking

EMIF06-VID01C2 GR

Pin identities (bump side)

987 654 321

I6

I5

I4

I3

Gnd Gnd Gnd

O6

O5

O4

O3

Circuit configuration

R

Input

I2

O2

I1

O1

Output

A

B

C

Complies with the following standards:

IEC 61000-4-2

level 4 input pins 15 kV (air discharge)

8 kV (contact discharge

MIL STD 883E - Method 3015-6 Class 3

June 2006 Rev 2 1/7

R = 100
C = 16pF typ. @ 3V

Ω

LINE

www.st.com

7

Characteristics EMIF06-VID01C2

1 Characteristics

Table 1. Absolute Ratings (limiting values)

Symbol Parameter and test conditions Value Unit

Maximum junction temperature 125 °C

T

j

T

T

Table 2. Electrical Characteristics (T

Symbol Parameter

Operating temperature range - 40 to + 85 °C

op

Storage temperature range - 55 to + 150 °C

stg

= 25° C)

amb

I

V

I

V

C

Breakdown voltage

BR

Leakage current @ V

RM

Stand-off voltage

RM

Series resistance between

R

Input and Output

Input capacitance per line

line

RM

IR
IRM

VRMVBR

IRM
IR

V

BRVRM

V

Symbol Test conditions Min. Typ. Max. Unit

V

BR

I

RM

IR = 1 mA 6 8 10 V

VRM = 3 V per line 500 nA

R I = 10 mA 80 100 120 Ω

C

line

VR = 3 V DC 1 MHz V

= 30 mV 16 19 pF

OSC

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EMIF06-VID01C2 Characteristics

Figure 1. S21 (db) attenuation measurement Figure 2. Analog crosstalk measurement

0

dB

-10

-20

-30

-40

-50

-60

100k 1M 10M 100M 1G

f/Hz

Figure 3. ESD response to IEC 61000-4-2

(+15kV air discharge) on one input
(Vin) and on one output (Vout)

Input
10V/d

Output
10V/d

0

dB

-10

-20

-30

-40

-50

-60

-70

-80

-90

-100

100k 1M 10M 100M 1G

f/Hz

Figure 4. ESD response to IEC 61000-4-2

(-15kV air discharge) on one input
(Vin) and on one output (Vout)

Input
10V/d

Output
10V/d

200ns/d

Figure 5. Junction capacitance versus

reverse voltage applied (typical
values)

C (pF)

LINE

28

28

26

26

24

24

22

22

20

20

18

18

16

16

14

14

12

12

10

10

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

V (V)

LINE

200ns/d

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