ST EMIF06-VID01C2 User Manual

EMIF06-VID01C2

IPAD™

6 line low capacitance EMI filter and ESD protection

Main application

Where EMI filtering in ESD sensitive equipment is required:

■LCD and camera for mobile phones

■Computers and printers

■Communication systems

■MCU board

Description

The EMIF06-VID01C2 is a 6 line highly integrated device designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interference. The Flip-Chip packaging means the package size is equal to the die size.

This filter includes ESD protection circuitry, which prevents damage to the application when it is subjected to ESD surges up to 15 kV.

Benefits

■High efficiency EMI filtering (-40db @ 900MHz)

■Low line capacitance suitable for high speed data bus

■Low serial resistance for camera impedance adaptation

■Optimized PCB space consuming: 2.92mm x 1.29mm

■Very thin package: 0.69 mm

■High efficiency in ESD suppression on inputs pins (IEC61000-4-2 level 4)

■High reliability offered by monolithic integration

■High reducing of parasitic elements through integration and wafer level packaging

■Lead free package

Complies with the following standards:

IEC 61000-4-2

level 4 input pins	15 kV	(air discharge)
	8 kV	(contact discharge

MIL STD 883E - Method 3015-6 Class 3

Lead free coated Flip-Chip (15 Bumps)

Order code

Part Number						Marking
EMIF06-VID01C2							GR
Pin identities (bump side)
9	8	7	6	5	4	3	2	1
I6		I5	I4		I3	I2		I1	A
	Gnd			Gnd			Gnd		B
O6		O5	O4		O3	O2		O1	C

Circuit configuration

R

Input

Output

R = 100Ω

CLINE = 16pF typ. @ 3V

June 2006

Rev 2

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www.st.com

Characteristics	EMIF06-VID01C2

1 Characteristics

Table 1.	Absolute Ratings (limiting values)
Symbol	Parameter and test conditions	Value	Unit
Tj	Maximum junction temperature	125	°C
Top	Operating temperature range	- 40 to + 85	°C
Tstg	Storage temperature range	- 55 to + 150	°C

Table 2.	Electrical Characteristics (Tamb = 25° C)
Symbol	Parameter		I
VBR	Breakdown voltage
IRM	Leakage current @ VRM		IR
	VBR	VRM	IRM		V
VRM	Stand-off voltage		IRM	VRM
					VBR
			IR
R	Series resistance between
	Input and Output
Cline	Input capacitance per line

Symbol	Test conditions	Min.	Typ.	Max.	Unit
VBR	IR = 1 mA	6	8	10	V
IRM	VRM = 3 V per line			500	nA
R	I = 10 mA	80	100	120	Ω
Cline	VR = 3 V DC 1 MHz VOSC = 30 mV		16	19	pF

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EMIF06-VID01C2									Characteristics
Figure 1. S21 (db) attenuation measurement					Figure 2. Analog crosstalk measurement
0					0
dB					dB
					-10
-10					-20
-20					-30
					-40
-30					-50
					-60
-40					-70
-50					-80
					-90
-60					-100
100k	1M	10M	100M	1G	100k	1M	10M	100M	1G
			f/Hz					f/Hz
Figure 3. ESD response to IEC 61000-4-2					Figure 4. ESD response to IEC 61000-4-2
	(+15kV air discharge) on one input					(-15kV air discharge) on one input
	(Vin) and on one output (Vout)					(Vin) and on one output (Vout)

Input 10V/d

Input 10V/d

Output

10V/d

Output 10V/d

200ns/d

200ns/d

Figure 5. Junction capacitance versus reverse voltage applied (typical values)

CLINE(pF)
28
26
24
22
20
18
16
14
12
10
0.0	0.5	1.0	1.5	2.0	2.5	3.0
			VLINE(V)

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