ST EMIF06-MSD04F3 User Manual

EMIF06-MSD04F3

6-line low capacitance IPAD™ for micro-SD card with EMI filtering and ESD protection

Features

■EMI low-pass filter

■Integrated pull up resistors to prevent bus floating when no card is connected

■208 MHz clock frequency compatible with SDR104 mode (SD3.0)

■Lead-free package

Benefits

■Low power consumption

■Easy layout thanks to smart pin-out configuration

■Very low PCB space consumption

■High reliability offered by monolithic integration

■Reduction of parasitic elements thanks to CSP integration

Complies with the following standards:

■IEC 61000-4-2 level 4:

–15 kV (air discharge)

–8 kV (contact discharge)

Flip Chip (16 bumps)

Figure 1. Pin configuration (bump side)

4 3 2 1

A

B

C

D

Application

Micro (T-Flash) secure digital memory card in:

■Mobile phones

■Communication systems

Description

The EMIF06-MSD04F3 is a highly integrated device based on IPAD technology offering two functions: ESD protection to comply with IEC standard, and EMI filtering to reject mobile phone frequencies.

TM: IPAD is a trademark of STMicroelectronics

July 2011

Doc ID 018849 Rev 1

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www.st.com

Characteristics	EMIF06-MSD04F3

1 Characteristics

Table 1.	Absolute ratings (limiting values)
Symbol	Parameter	Value	Unit
	ESD discharge IEC 61000-4-2, level 4
	Air discharge, card side	15
VPP	Contact discharge, card side	8	kV
	Air discharge, IC side	2
	Contact discharge, IC side	2
Tj	Maximum junction temperature	125	°C
Top	Operating temperature range	- 40 to + 85	°C
Tstg	Storage temperature range	- 55 to + 150	°C

Figure 2. EMIF06-MSD04F3 configuration

R7

R8

		Clk
		CMD
		Dat0
	Host	Dat1
	side	Dat2
		Dat3/CD

	Vcc
R9 R10 R11	SDClk
R1
R2	SDCMD
R3	SDDat0
R4	SDDat1	Card
R5	SDDat2	side
R6	SDDat3/CD

Vss

Table 2.	Pin configuration
Pin	Signal	Pin	Signal
A1	Dat0	C1	CMD
A2	Dat1	C2	Vss
A3	SDDat1	C3	Vss
A4	SDDda0	C4	SDCMD
B1	Clk	D1	Dat3/CD
B2	Vcc	D2	Dat2
B3	Vss	D3	SDDat2
B4	SDClk	D4	SDDat3/CD

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EMIF06-MSD04F3	Characteristics

Table 3. Electrical characteristic

Symbol		Parameter				Test conditions		Min.	Typ.	Max.	Unit
VBR	Breakdown voltage				IR = 1 mA			14	16		V
IRM	Leakage current at VRM				VRM = 3 V					0.1	µA
R1, R2, R3,	Serial resistance				Tolerance ±10 %, matching ±2 %			36	40	44	Ω
R4, R5, R6
R7, R8, R9,	Pull-up resistance				Tolerance ±20 %, matching ±2 %			20	25	30	kΩ
R10, R11
Cline	Data line capacitance				V = 1.8 V, F = 10 MHz, VOSC = 30 mV				7.5	10	pF
					V = 2.9 V, F = 10 MHz, VOSC = 30 mV					9
F0	Cut-off frequency				S21 = -3 dB				550		MHz
tR,tF	Rise and fall time				Cload = 10 pF, low-ref = 0.58 V,				0.98		ns
					high-ref = 1.27 V
Figure 3. S21 attenuation measurements						Figure 4.	Analog crosstalk measurements
0 S21 (dB)						0 dB
						-10
-5						-20
-10						-30
						-40
-15						-50
						-60
-20						-70
						-80
-25						-90
					F (Hz)
						-100
-30										F (Hz)
100k	1M	10M	100M		1G	-110
	Clk			Dat0		100k	1M	10M	100M	1G
	Dat1			Dat2		Clk-Dat0		Dat3-SDDat0
	Dat3			Cmd

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