ST EMIF06-MSD04F3 User Manual
6-line low capacitance IPAD™ for micro-SD card
Features
■ EMI low-pass filter
■ Integrated pull up resistors to prevent bus
floating when no card is connected
■ 208 MHz clock frequency compatible with
SDR104 mode (SD3.0)
■ Lead-free package
Benefits
EMIF06-MSD04F3
with EMI filtering and ESD protection
Flip Chip
(16 bumps)
■ Low power consumption
■ Easy layout thanks to smart pin-out
configuration
■ Very low PCB space consumption
■ High reliability offered by monolithic integration
■ Reduction of parasitic elements thanks to CSP
integration
Complies with the following standards:
■ IEC 61000-4-2 level 4:
– 15 kV (air discharge)
– 8 kV (contact discharge)
Application
Micro (T-Flash) secure digital memory card in:
■ Mobile phones
■ Communication systems
Description
The EMIF06-MSD04F3 is a highly integrated
device based on IPAD technology offering two
functions: ESD protection to comply with IEC
standard, and EMI filtering to reject mobile phone
frequencies.
Figure 1. Pin configuration (bump side)
1234
A
B
C
D
TM: IPAD is a trademark of STMicroelectronics
July 2011 Doc ID 018849 Rev 1 1/9
www.st.com
9
Characteristics EMIF06-MSD04F3
1 Characteristics
Table 1. Absolute ratings (limiting values)
Symbol Parameter Value Unit
ESD discharge IEC 61000-4-2, level 4
Air discharge, card side
V
PP
Contact discharge, card side
Air discharge, IC side
Contact discharge, IC side
T
Maximum junction temperature 125 °C
j
T
Operating temperature range - 40 to + 85 °C
op
T
Storage temperature range - 55 to + 150 °C
stg
Figure 2. EMIF06-MSD04F3 configuration
R7
R11
R9
R8
R10
R1
R2
R3
R4
R5
R6
Host
side
Clk
CMD
Dat0
Dat1
Dat2
Dat3/CD
15
8
2
2
Vcc
SDClk
SDCMD
SDDat0
SDDat1
SDDat2
SDDat3/CD
kV
Card
side
Table 2. Pin configuration
Pin Signal Pin Signal
A1 Dat0 C1 CMD
A2 Dat1 C2 V
A3 SDDat1 C3 V
A4 SDDda0 C4 SDCMD
B1 Clk D1 Dat3/CD
B2 V
B3 V
B4 SDClk D4 SDDat3/CD
cc
ss
2/9 Doc ID 018849 Rev 1
Vss
ss
ss
D2 Dat2
D3 SDDat2
EMIF06-MSD04F3 Characteristics
Table 3. Electrical characteristic
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
BR
I
RM
R1, R2, R3,
R4, R5, R6
R7, R8, R9,
R10, R11
C
line
F
0
tR,t
Breakdown voltage IR = 1 mA 14 16 V
Leakage current at V
RM
VRM = 3 V 0.1 µA
Serial resistance Tolerance ±10 %, matching ±2 % 36 40 44 Ω
Pull-up resistance Tolerance ±20 %, matching ±2 % 20 25 30 kΩ
Data line capacitance
V = 1.8 V, F = 10 MHz, V
V = 2.9 V, F = 10 MHz, V
= 30 mV 7.5 10
OSC
= 30 mV 9
OSC
Cut-off frequency S21 = -3 dB 550 MHz
C
= 10 pF, low-ref = 0.58 V,
Rise and fall time
F
load
high-ref = 1.27 V
0.98 ns
Figure 3. S21 attenuation measurements Figure 4. Analog crosstalk measurements
S21 (dB)
0
-5
-10
-15
-20
-25
-30
100k 1M 10M 100M 1G
Clk Dat0
Dat1
Dat3
Dat2
Cmd
F (Hz)
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
dB
0
100k 1M 10M 100M 1G
Clk-Dat0 Dat3-SDDat0
F (Hz)
pF
Doc ID 018849 Rev 1 3/9
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