ST EMIF06-MSD03F3 User Manual

6-line low capacitance IPAD™ for micro-SD card

Features

■ EMI low-pass filter

■ ESD protection ±15 kV (IEC 61000-4-2)

■ Integrated pull up resistors to prevent bus

floating when no card is connected

■ 208 MHz clock frequency compatible with

SDR104 mode (SD3.0)

■ Lead-free package

■ Coated version option on request

■ Electrical card detect option

EMIF06-MSD03F3

with EMI filtering and ESD protection

Flip Chip

(16 bumps)

Figure 1. Pin configuration (bump side)

Benefits

■ Low power consumption

■ Easy layout thanks to smart pin-out

configuration

■ Very low PCB space consumption

■ High reliability offered by monolithic integration

■ Reduction of parasitic elements thanks to CSP

integration

Complies with the following standards:

■ IEC 61000-4-2 level 4:

– 15 kV (air discharge)
– 8 kV (contact discharge)

Application

Micro (T-Flash) secure digital memory card in:

■ Mobile phones

■ Communication systems

Description

The EMIF06-MSD03F3 is a highly integrated
device based on IPAD technology offering two
functions: ESD protection to comply with IEC
standard, and EMI filtering to reject mobile phone
frequencies.

1234

A

B

C

D

TM: IPAD is a trademark of STMicroelectronics

July 2011 Doc ID 018984 Rev 1 1/8

www.st.com

8

Characteristics EMIF06-MSD03F3

1 Characteristics

Table 1. Absolute ratings (limiting values)

Symbol Parameter Value Unit

ESD discharge IEC 61000-4-2, level 4

air discharge, card side

V

PP

contact discharge, card side
air discharge, IC side
contact discharge, ICside

T

Maximum junction temperature 125 °C

j

T

Operating temperature range - 40 to + 85 °C

op

T

Storage temperature range - 55 to + 150 °C

stg

Figure 2. EMIF06-MSD03F3 configuration

15

8

kV
2
2

Vcc2

Clk

CMD

Data 0

2kV

Data 1
Data 2

Data 3/CD

Table 2. Pin configuration

R9

R13

R11

R10

R12

R1
R2

R3

R4
R5
R6

GND

Vcc1

SDClk
SDCMD
SDData 0
SDData 1
SDData 2
SDData 3/CD

15kV

Pin Signal Pin Signal

A1 DATA0 C1 CMD

A2 DATA1 C2 V

A3 SDDATA1 C3 V

cc2

ss

A4 SDDATA0 C4 SDCMD

B1 CLK D1 DATA3/CD

B2 V

B3 V

B4 SDCLK D4 SDDATA3/CD

cc1

ss

D2 DATA2

D3 SDDATA2

2/8 Doc ID 018984 Rev 1

EMIF06-MSD03F3 Characteristics

Table 3. Electrical characteristic

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

BR

I

RM

R1, R2, R3,

R4, R5, R6

R9, R10,

R11, R12

Breakdown voltage IR = 1 mA 14 16 V

Leakage current at V

RM

VRM = 3 V 0.1 µA

Serial resistance Tolerance ±10 %, matching ±2 % 40 Ω

Pull-up resistance Tolerance ±10 %, matching ±2 % 50 kΩ

R13 Pull-up resistance on CMD Tolerance ±10 % 15 kΩ

C

F

tR,t

line

0

V = 0 V, F = 10 MHz, V

Data line capacitance

V = 2.9 V, F = 10 MHz, V

Cut-off frequency S21 = -3 dB 550 MHz

C

= 10 pF, low-ref = 0.58 V,

Rise and fall time

F

load

high-ref = 1.27 V, V

DDIO

= 30 mV 10 12

OSC

= 30 mV 7.5 10

OSC

= 30 mV 9

OSC

= 1.8 V

0.98 ns

Figure 3. S21 attenuation measurements Figure 4. Analog crosstalk measurements

S21 (dB)

0.00

-5.00

-10.00

-15.00

-20.00

-25.00

-30.00

100.0k 1.0M 10.0M 100.0M 1.0G
Clk Data0

Data1 Data2
Data3 Cmd

F (Hz)

-100.00

-110.00

-120.00

dB

0.00

-10.00

-20.00

-30.00

-40.00

-50.00

-60.00

-70.00

-80.00

-90.00

100.0k 1.0M 10.0M 100.0M 1.0G

Clk-Data0 Data3-SDData0

F (Hz)

pF V = 1.8 V, F = 10 MHz, V

Figure 5. Line capacitance versus applied

voltage (typical values)

C (pF)

12

11

10

9

8

7

6

5

Clk

4

Data0

3

CMD

2

Data3

1

0

012345

Figure 6. Line capacitance versus frequency

(typical values)

C (pF)

F=10 MHz
V

=30 mV

OSC

=25 °C

T

AMB

V

(V)

BIAS

Doc ID 018984 Rev 1 3/8

16.00

14.00

12.00

10.00

8.00

6.00

4.00

2.00

0.00

0 50 100 150 200 250 300 350

F=1MHz to 350MHz

=30mV

V

osc

Tj=25 °C

Line DATA/GND

A3/B3 (SDDATA1) &D3/C3 (SDDATA2)

RMS

F (MHz)