ST EMIF06-MSD02N16 User Manual

6-line IPAD™, EMI filter and ESD protection

Features

■ High design flexibility

■ Lead free package

■ Very low PCB space consumption:

3.5 mm x 1.2 mm

■ Very thin package: 0.5 mm

■ High efficiency in ESD suppression

■ IEC 61000-4-2 level 4

■ High reliability offered by monolithic integration

■ High reduction of parasitic elements through

integration and µQFN packaging

Complies with following standards:

■ IEC 61000-4-2 level 4 external pins

Applications

■ Mobile telephones,

■ Navigation systems

■ Digital still cameras

■ Portable devices.

EMIF06-MSD02N16

Micro QFN 16L 3.5 mm x 1.2 mm

(bottom view)

Figure 1. Pin configuration

1

GND

RDATA_VCC

VCC

DAT2_Ex

DAT3_Ex

CMD_Ex

CLK_Ex

DAT0_Ex

DAT1_Ex

WP/CD

RDAT3_GND

DAT2_In

DAT3_In

CMD_In

CLK_In

DAT0_In

DAT1_In

Figure 2. Schematic circuit diagram

1

Description

Vcc

R12

The EMIF06-MSD02N16 is a highly integrated device designed to suppress EMI/RFI noise for interface line filtering. It is packaged in micro QFN.

This filter includes ESD protection circuitry, which prevents damage to the protected device when subjected to ESD surges.

DAT2_In

DAT3_In

CMD_In

CLK_In

DAT0_In

DAT1_In

DAT3 pull-up

GND

DAT3 pull-down

R7

R13

R8 R9

R10 R11

R12

R1

R2

R3

R4

R5

R6

TM: IPAD is a trademark of STMicroelectronics

November 2008 Rev 1 1/12

Vcc

WP/CD

DAT2_Ex

DAT3_Ex

CMD_Ex

CLK_Ex

DAT0_Ex

DAT1_Ex

GND

www.st.com

Characteristics EMIF06-MSD02N16

1 Characteristics

Table 1. Absolute ratings (limiting values)

Symbol Parameter Value Unit

ESD IEC 61000-4-2 Contact discharge on DATx_In, CMD_In and CLK_In pins

V

PP

On all other pins Contact discharge Air discharge

T

op

T

stg

Table 2. Electrical characteristics (T

Maximum junction temperature 125 °C

j

Operating temperature range - 30 to + 85 °C

Storage temperature range - 55 to + 150 °C

Symbol Parameter

C

V

I

V

R

I

R

LINE

Breakdown voltage

BR

Leakage current @ V

RM

Stand-off voltage

RM

Clamping voltage

CL

Dynamic resistance

d

Peak pulse current

PP

Series resistance between Input & Output

I/O

RM

Input capacitance per line

amb

= 25 °C)

I

F

V

BR

V

RM

CL

2

8

12

V

F

I

RM

I

R

I

PP

Symbol Test conditions Min. Typ. Max. Unit

kV

V

BR

I

RM

R1, R2, R3, R4, R5, R

R

, R8, R9, R10, R11, R12Pull-up resistors 80 90 100 kΩ

7

IR = 1 mA 5 8 V

VRM = 3 V 200 nA

Series resistors - tolerance ±20% 36 45 54 Ω

6

R13 Pull-down resistor - tolerance ±20% 375 470 565 kΩ

V

= 0 V, V

C

line

LINE

(under zero light conditions)

= 30 mV, F = 1 MHz

OSC

20 pF

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EMIF06-MSD02N16 Characteristics

Figure 3. S21 attenuation measurement Figure 4. Analog cross talk measurements

dB

0.00

-10.00

-20.00

-30.00

-40.00

F (Hz)

-50.00

100.0k 1.0M 10.0M 100.0M 1.0G

DAT0 DAT1 DAT2 DAT3

CLK CMD

Figure 5. ESD response to IEC 61000-4-2

(+12 kV air discharge) on one input (V

) and on one output (V

in

55 V Max

IN

out

)

Figure 6. ESD response to IEC 61000-4-2

0.00

-10.00

-20.00

-30.00

-40.00

-50.00

-60.00

-70.00

-80.00

-90.00

-100.00

-110.00

-120.00

-130.00

-140.00

dB

F (Hz)

100.0k 1.0M 10.0M 100.0M 1.0G

-DAT3

DAT2

-DAT1

(- 12 kV air discharge) on one input (Vin) and on one output (V

IN

-41 V Max

OUT

out

)

39 V Max

OUT

-34 V Max

Figure 7. Line capacitance versus reverse voltage applied on DATx and CMD line

C

(pF)

LINE

16

14

12

10

8

6

4

V

(V)

2

0

0.0 1.0 2.0 3.0 4.0 5.0

LINE

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Application information EMIF06-MSD02N16

2 Application information

The EMIF06-mSD02N16 is a dedicated interface device for micro SD card/T-Flash card in mobile phones. The device provides:

● ESD protection

● EMI filterering

● Pull-up resistors

● Card detection circuit

2.1 ESD protection

Each pin is connected to a TVS diode able to withstand 12 kV on all pins except on DATx_In, CMD_In and CLK_In.

2.2 EMI filtering

DATx, CMD and CLK lines are immunized against EMI radiations thanks to pi-filters. To avoid any degradation of the signal integrity at high frequency, the total line capacitance stays lower than 20 pF making the device compatible with a clock frequency up to 52 MHz.

2.3 Pull-up resistors

As recommended by the SD Specifications (Part 1 Physical Layer Version 2.00), all the data lines DATx and the CMD line must be pulled-up with resistors of 10 to 100 kΩ to avoid bus floating not only in SD 4-bit mode but also in SD 1-bit and SPI mode.

For the EMIF06-MSD02N16 device the pull-up resistor value has been fixed at 90 kΩ. This value makes the EMIF06-MSD02N16 compatible with most of the level shifters that may be used in the circuit including auto direction-sensing translators known to exhibit a weak current output.

2.4 Card detection circuit

The EMIF06-mSD02N16 provides the flexibility to use either mechanical card detection with a dedicated pin connected to the memory card slot or the electrical card detection using the internal pull resistor of DAT3 of the micro SD card/T-Flash card.

In case of mechanical card detection, the user must add a pull-up on the circuit connected to the CD (Card Detect) of the micro-SD/T-Flash slot as shown in Figure 8.

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