ST EMIF06-mSD02C3 User Manual

Features
EMI low-pass filter
Integrated pull up resistors to prevent bus
floating when no card is connected
50 MHz clock frequency compatibility with
C
< 20 pF
line
Low power consumption
Easy layout thanks to smart pin-out
configuration
Very low PCB space consuming
High reliability offered by monolithic integration
Reduction of parasitic elements thanks to CSP
integration
Lead-free package
EMIF06-mSD02C3
Mini and micro-SD card IPAD™
EMI filtering and ESD protection
Flip Chip
(16 bumps)

Figure 1. Pin configuration (bump side)

1234
A
B
C
Complies with the following standards:
IEC 61000-4-2 level 4
– 15 kV (air discharge) – 8 kV (contact discharge)
MIL STD 883G - Method 3015-7 Class 3A
SD Specification Part 1, Physical Layer
Specification, Version 2.0
Application
Mini and micro (T-Flash) secure digital memory card in:
Mobile phones
Communication systems
D
Description
The EMIF06-mSD02C3 is a highly integrated device based on IPAD technology offering two functions: ESD protection to comply with IEC standard, and EMI filtering to reject mobile phone frequencies.
TM: IPAD is a trademark of STMicroelectronics
August 2010 Doc ID 16910 Rev 1 1/11
www.st.com
11
Characteristics EMIF06-mSD02C3

1 Characteristics

Table 1. Absolute ratings (limiting values)

Symbol Parameter Value Unit
V
T
ESD discharge IEC 61000-4-2, air discharge
PP
ESD discharge IEC 61000-4-2, contact discharge
Maximum input voltage 5.5 V
V
in
T
Maximum junction temperature 125 °C
j
Operating temperature range - 40 to + 85 °C
T
op
Storage temperature range - 55 to + 150 °C
stg
15 15

Figure 2. EMIF06-mSD02C3 configuration

Vcc
R9
R11
R10
R12
R13
Clk
CMD
HOST CARD
Data0 Data1 Data2
Data3/CD
R1
R2
R3
R3
R5
R5
GND bumps must be connected together
SDClk SDCMD SDData0 SDData1 SDData2 SDData3/CD
kV

Table 2. Pin configuration

Pin Signal Pin Signal
A1 DATA0 C1 CMD
A2 DATA1 C2 V
A3 SDDATA1 C3 V
A4 SDDATA0 C4 SDCMD
B1 CLK D1 DATA3/CD
B2 V
B3 V
cc
ss
B4 SDCLK D4 SDDATA3/CD
2/11 Doc ID 16910 Rev 1
ss
ss
D2 DATA2
D3 SDDATA2
EMIF06-mSD02C3 Characteristics

Table 3. Electrical characteristic

Symbol Test conditions Min. Typ. Max. Unit
V
BR
I
RM
IR = 1 mA 14 16 V
VRM = 3 V 0.1 µA
R1, R2, R3, R4, R5, R6 Tolerance ± 20 % 40 Ω
R10, R11, R12, R13 Tolerance ± 30 % 56 kΩ
R9 Tolerance ± 30 % 4.7 kΩ
C
line
V = 0 V, F = 1 MHz, V
= 30 mV 15 20 pF
OSC
Figure 3. S21 attenuation measurements Figure 4. Analog crosstalk measurements
dB
0.00
-10.00
-20.00
-30.00
-40.00
-50.00
-60.00
V
=0 V
BIAS
100.0k 1.0M 10.0M 100.0M 1.0G
DATA 0 DATA 2
CMD
F (Hz)
DATA 1
DATA3/CD
Clk
0.00
-10.00
-20.00
-30.00
-40.00
-50.00
-60.00
-70.00
-80.00
dB
V
=0 V
BIAS
F (Hz)
100.0k 1.0M 10.0M 100.0M 1.0G
DATA0-SDDATA1
DATA0-SDDATA3
Figure 5. ESD response to IEC 61000-4-2
(+15 kV air discharge) on CLK and data lines
20 V/div
Input
5 V/div
Output
100 ns/div
Figure 6. ESD response to IEC 61000-4-2
(-15 kV air discharge) on CLK and data lines
Input
20 V/div
Output
10 V/div
100 ns/div
Doc ID 16910 Rev 1 3/11
Characteristics EMIF06-mSD02C3
Figure 7. ESD response to IEC 61000-4-2
10 V/div
(+15 kV air discharge) on V
V
CL
CC
100 ns/div

Figure 9. Digital crosstalk test setup

Agilent pulse pattern
generator 81110A
V
=3 V
OUT
=2 ns (open)
t
R=tF
F=8.3 MHz
Input Line “A”
line
Figure 8. ESD response to IEC 61000-4-2
(-15 kV air discharge) on VCC line
10 V/div
V
CL
100 ns/div
LeCroy Wavesurfer 64Xs
600 MHz – 2.5Gs/s Oscilloscope
Direct input on 50Ω
Voltage Probe LeCroy HFP1000 100 k Ω / 0.7 pF
Output line “B”
Input Line “B”: 50 Ω & Open
•T

Figure 10. Digital crosstalk

100 mV/div
1 V/div
AMB
5050Ω
=25 °C
SDData0
Clk
100 ns/div
4/11 Doc ID 16910 Rev 1
Loading...
+ 7 hidden pages