ST EMIF06-mSD01F2 User Manual

EMIF06-mSD01F2

IPAD™

Mini and micro SD Card - EMI filtering and 25 kV ESD protection

Main application

Mini and micro (T-Flash) Secure Digital memory card in mobile phones and communication systems

Description

The EMIF06-mSD01F2 is a highly integrated device based on IPAD technology with the following functions:

■ESD protection to comply with IEC standard

■EMI Filtering to reject mobile phone frequencies

Benefits

■EMI Low-pass-filter

■ESD protection ±25 kV (IEC 61000-4-2)

■Integrated pull up resistors to prevent bus floating when no card is connected

■50 Mhz clock frequency compatibility with Cline< 20 pF

■Low power consumption

■Easy Layout thanks to smart pin-out configuration

■Very low PCB space consuming

■High reliability offered by monolithic integration

■Reduction of parasitic elements thanks to CSP integration

■Lead free package

■Coated version option upon request

Complies with the following standards:

IEC 61000-4-2

level 4 15 kV (air discharge)

8 kV (contact discharge) MIL STD 883G - Method 3015-7 Class 3A

SD Card Specification Ver. 1.01

MicroSD Card Specification Ver. 1.0

Physical layer specification, Part 1 vesion 1.1

Flip-Chip

(16 Bumps)

Pin configuration (bump side)

	4	3	2	1
	A
	B
	C
	D
A1	DATA0		C1	CMD
A2	DATA1		C2	Vss
A3	SDDATA1		C3	Vss
A4	SDDATA0		C4	SDCMD
B1	CLK		D1	DATA3/CD
B2	Vcc		D2	DATA2
B3	Vss		D3	SDDATA2
B4	SDCLK		D4	SDDATA3/CD

Order code

Part Number	Marking
EMIF06-mSD01F2	HJ

TM: IPAD is a trademeark of STMicroelectronics

February 2007

Rev 1

1/7

www.st.com

Characteristics	EMIF06-mSD01F2

1 Characteristics

	Table 1.	Absolute ratings (limiting values)
	Symbol	Parameter and test conditions	Value	Unit
	VPP	ESD discharge IEC 61000-4-2, air discharge	25	kV
		ESD discharge IEC 61000-4-2, contact discharge	25
	Vin	Maximum input voltage	5.5	V
	Tj	Maximum junction temperature	125	° C
	Top	Operating temperature range	- 40 to + 85	° C
	Tstg	Storage temperature range	125	° C

Figure 1.	EMIF06-mSD01F2 configuration
				Vcc
	R9	R10	R11 R12	R13
	Clk			R1	SDClk
				R2
	CMD				SDCMD
				R3
Host	Data0				SDData0
				R4		Card
	Data1				SDData1
				R5
	Data2				SDData2
				R6
	Data3/CD				SDData3/CD
		Vss			Vss

Table 2.	Electrical characteristics
	Symbol	Test conditions	Min.	Typ.	Max.	Unit
	VBR	IR = 1 mA	14	16		V
	IRM	VRM = 3 V			0.1	µA
R1, R2, R3, R4, R5, R6		Tolerance ±20%		40		Ω
R9, R10, R11, R12, R13		Tolerance ±30%		25		kΩ
	Cline	V = 0 V, F = 1 MHz Vosc = 30 mV		17	20	pF

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EMIF06-mSD01F2	Characteristics
Figure 2. Frequency response for	Figure 3. Frequency response for
line D3/D2 - VCC not connected	line C1/B4 - VCC not connected

dB								dB
0.00								0.00
								-10.00
-10.00
								-20.00
-20.00								-30.00
								-40.00
-30.00								-50.00
								-60.00
-40.00
								-70.00			F (Hz)
			F (Hz)
-50.00								-80.00
1.0M	3.0M	10.0M	30.0M	100.0M	300.0M	1.0G	3.0G	1.0M	3.0M	10.0M	30.0M	100.0M	300.0M	1.0G	3.0G
	D2-D3								C1-B4

Figure 4. ESD response to IEC 61000-4-2 (+15 kV air discharge) on one imput (Vin) and one output (Vout)

Figure 5. ESD response to IEC 61000-4-2 (-15 kV air discharge) on one imput (Vin) and one output (Vout)

Figure 6. Junction capacitance versus reverse applied voltage CLK line (typical values)

14 CLINE (pF)

12

10

8

6

4

2

VLINE (V) 0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

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