ST EMIF06-HMC01F2 User Manual
EMIF06-HMC01F2
6-line IPAD™, EMI filter including ESD protection
Features
■6-line low-pass-filter
■High efficiency in EMI filtering
■Very low PCB space occupation: < 4.4 mm2
■Lead-free package
■Very thin package: 0.65 mm
■High efficiency in ESD suppression
■High reliability offered by monolithic integration
■High reducing of parasitic elements through integration and wafer level packaging
Complies with the following standards
■IEC 61000-4-2 level 4 on external pins
–15 kV (air discharge)
–8 kV (contact discharge)
■MIL STD 883E - Method 3015-6 Class 3
Applications
■ High speed MultiMediaCard
Description
The EMIF06-HMC01F2 is a highly integrated array designed to suppress EMI / RFI noise for high speed MultiMediaCard port filtering. The EMIF06-HMC01F2 Flip Chip packaging means the package size is equal to the die size.
Additionally, this filter includes ESD protection circuitry which prevents damage to the application when subjected to ESD surges up to 15 kV.
Flip Chip (16 bumps)
Figure 1. Pin layout (bump side)
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3 |
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1 |
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A |
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B |
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C |
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D |
A1 |
cmd |
C1 |
dat2 |
A2 |
clk |
C2 |
gnd |
A3 |
Vmmc/Vdd |
C3 |
MMCdat1 |
A4 |
MMCclk |
C4 |
MMCdat0 |
B1 |
dat1 |
D1 |
dat3 |
B2 |
dat0 |
D2 |
gnd |
B3 |
gnd |
D3 |
MMCdat3 |
B4 |
MMCcmd |
D4 |
MMCdat2 |
Figure 2. Basic cell configuration
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R10 |
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R11 |
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R12 |
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R13 |
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R14 |
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Vmmc |
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Vmmc |
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R2 |
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MMCclk |
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clk |
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R3 |
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MMCcmd |
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R4 |
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MMCdat0 |
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dat0 |
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R5 |
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MMCdat1 |
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dat1 |
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R6 |
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MMCdat2 |
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dat2 |
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R7 |
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MMCdat3 |
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dat3 |
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GND
TM: IPAD is a trademark of STMicroelectronics.
April 2008 |
Rev 2 |
1/8 |
www.st.com
Characteristics |
EMIF06-HMC01F2 |
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1 Characteristics
Table 1. |
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Absolute maximum ratings (Tamb = 25 °C) |
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Symbol |
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Parameter and test conditions |
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Value |
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Unit |
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Internal pins (A4, B4, C3, C4, D3, D4): |
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ESD discharge IEC61000-4-2, air discharge |
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2 |
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VPP |
ESD discharge IEC61000-4-2, contact discharge |
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2 |
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kV |
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External pins (A1, A2, A3, B1, B2, C1, D1): |
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ESD discharge IEC61000-4-2, air discharge |
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15 |
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ESD discharge IEC61000-4-2, contact discharge |
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8 |
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Tj |
Maximum junction temperature |
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125 |
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°C |
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Top |
Operating temperature range |
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-40 to +85 |
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°C |
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Tstg |
Storage temperature range |
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-55 to 150 |
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°C |
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Table 2. |
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Electrical characteristics (Tamb = 25 °C) |
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Parameters |
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I |
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VBR |
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Breakdown voltage |
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IRM |
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Leakage current @ VRM |
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VBR |
VRM |
IRM |
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V |
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IRM |
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VRM |
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Stand-off voltage |
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VRM |
VBR |
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Cline |
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Input capacitance per line |
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Symbol |
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Test conditions |
Tolernace |
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Min |
Typ |
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Max |
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Unit |
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VBR |
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IR = 1 mA |
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14 |
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V |
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IRM |
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VRM = 3V |
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0.1 |
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µA |
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Cline |
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@ 0V |
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20 |
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pF |
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R2,R3,R4, |
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I = 50 mA |
± 20 % |
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50 |
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Ω |
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R5, R6, R7 |
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R10, R11, |
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I = 50 µA |
± 30 % |
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75 |
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kΩ |
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R12, R13 |
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R14 |
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I = 200 µA |
± 30 % |
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7 |
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kΩ |
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2/8
EMIF06-HMC01F2 |
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Characteristics |
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Figure 3. S21 (dB) attenuation measurement |
Figure 4. Analog crosstalk measurement |
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0.00 |
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0.00 |
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dB |
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dB |
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- 10.00 |
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- 10.00 |
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- 20.00 |
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- 20.00 |
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- 30.00 |
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- 40.00 |
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- 30.00 |
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- 50.00 |
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- 60.00 |
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- 40.00 |
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- 70.00 |
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- 50.00 |
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- 80.00 |
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100.0k |
1.0M |
10.0M |
100.0M |
1.0G |
100.0k |
1.0M |
10.0M |
100.0M |
1.0G |
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f/Hz |
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f/Hz |
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Figure 5. ESD response to IEC 61000-4-2 |
Figure 6. ESD response to IEC 61000-4-2 |
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(+15kV air discharge) on one input |
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(-15kV air discharge) on one input |
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(Vin) and on one output (Vout) |
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(Vin) and on one output (Vout) |
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Input |
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Input |
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10V/d |
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10V/d |
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Output |
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Output |
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10V/d |
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10V/d |
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200ns/d |
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200ns/d |
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Figure 7. Junction capacitance versus reverse voltage applied (typical values)
CLINE (pF)
16 |
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14 |
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12 |
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Vosc=30mV |
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F=1MHz |
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10 |
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Ta=25 °C |
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8 |
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6 |
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4 |
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2 |
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0 |
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0 |
1 |
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3 |
4 |
5 |
VLINE (V)
3/8
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