6-line IPAD™, EMI filter including ESD protection
Features
■ 6-line low-pass-filter
■ High efficiency in EMI filtering
■ Very low PCB space occupation: < 4.4 mm
■ Lead-free package
■ Very thin package: 0.65 mm
■ High efficiency in ESD suppression
■ High reliability offered by monolithic integration
■ High reducing of parasitic elements through
integration and wafer level packaging
2
EMIF06-HMC01F2
Flip Chip
(16 bumps)
Figure 1. Pin layout (bump side)
1342
Complies with the following standards
■ IEC 61000-4-2 level 4 on external pins
– 15 kV (air discharge)
– 8 kV (contact discharge)
■ MIL STD 883E - Method 3015-6 Class 3
Applications
■ High speed MultiMediaCard
Description
The EMIF06-HMC01F2 is a highly integrated
array designed to suppress EMI / RFI noise for
high speed MultiMediaCard port filtering. The
EMIF06-HMC01F2 Flip Chip packaging means
the package size is equal to the die size.
Additionally, this filter includes ESD protection
circuitry which prevents damage to the application
when subjected to ESD surges up to 15 kV.
A
B
C
D
A1 cmd C1 dat2
A2 clk C2 gnd
A3 Vmmc/Vdd C3 MMCdat1
A4 MMCclk C4 MMCdat0
B1 dat1 D1 dat3
B2 dat0 D2 gnd
B3 gnd D3 MMCdat3
B4 MMCcmd D4 MMCdat2
Figure 2. Basic cell configuration
R10
R11
R12
R13
Vmmc
MMCclk
MMCcmd
MMCdat0
MMCdat1
MMCdat2
MMCdat3
R14
R2
R3
R4
R5
R6
R7
Vmmc
clk
cmd
dat0
dat1
dat2
dat3
GND
TM: IPAD is a trademark of STMicroelectronics.
April 2008 Rev 2 1/8
www.st.com
8
Characteristics EMIF06-HMC01F2
1 Characteristics
Table 1. Absolute maximum ratings (T
Symbol Parameter and test conditions Value Unit
Internal pins (A4, B4, C3, C4, D3, D4):
ESD discharge IEC61000-4-2, air discharge
V
ESD discharge IEC61000-4-2, contact discharge
PP
External pins (A1, A2, A3, B1, B2, C1, D1):
ESD discharge IEC61000-4-2, air discharge
ESD discharge IEC61000-4-2, contact discharge
amb
= 25 °C)
15
2
2
kV
8
T
T
T
Table 2. Electrical characteristics (T
Symbol Parameters
V
I
V
C
Maximum junction temperature 125 °C
j
Operating temperature range -40 to +85 °C
op
Storage temperature range -55 to 150 °C
stg
= 25 °C)
amb
I
BR
RM
RM
line
Breakdown voltage
Leakage current @ V
RM
Stand-off voltage
Input capacitance per line
VRMVBR
IRM
IRM
V
BRVRM
Symbol Test conditions Tolernace Min Typ Max Unit
V
BR
I
RM
C
line
R
R
2
,
R
R
5
,
R
10
,
R
12
,
R
IR = 1 mA 14 V
VRM = 3V 0.1 µA
@ 0V 20 pF
R
3
4
,
,
I = 50 mA ± 20 % 50 Ω
R
6
7
,
R
11
,
I = 50 µA ± 30 % 75 kΩ
R
13
I = 200 µA ± 30 % 7 kΩ
14
V
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EMIF06-HMC01F2 Characteristics
Figure 3. S21 (dB) attenuation measurement Figure 4. Analog crosstalk measurement
0.00
dB
-10.00
-20.00
-30.00
-40.00
-50.00
100.0k 1.0M 10.0M 100.0M 1.0G
f/Hz
Figure 5. ESD response to IEC 61000-4-2
(+15kV air discharge) on one input
(V
) and on one output (V
in
out
)
Input
10V/d
Output
10V/d
0.00
dB
-10.00
-20.00
-30.00
-40.00
-50.00
-60.00
-70.00
-80.00
100.0k 1.0M 10.0M 100.0M 1.0G
f/Hz
Figure 6. ESD response to IEC 61000-4-2
(-15kV air discharge) on one input
(Vin) and on one output (V
out
)
Input
10V/d
Output
10V/d
200ns/d
200ns/d
Figure 7. Junction capacitance versus reverse voltage applied (typical values)
C (pF)
LINE
16
14
12
10
8
6
4
2
0
012345
V (V)
LINE
Vosc=30mV
Vosc=30mV
F=1MHz
F=1MHz
Ta=25°C
Ta=25°C
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