ST EMIF06-1502M12 User Manual

EMIF06-1502M12

6-line IPAD™ low capacitance EMI filter and ESD protection in micro QFN package

Features

EMI asymmetrical (I/O) low-pass filter

High efficiency in EMI filtering

Very low PCB space consuming: 2.5 mm x 1.5 mm

Very thin package: 0.6 mm max

High efficiency in ESD suppression on inputs pins (IEC 61000-4-2 level 4)

High reliability offered by monolithic integration

High reducing of parasitic elements through integration and wafer level packaging

Lead-free package

Complies with following standards:

IEC 61000-4-2 level 4 input pins

15 kV (air discharge)

8 kV (contact discharge)

MIL STD 883G - Method 3015-7 Class 3A (all pins)

Applications

Where EMI filtering in ESD sensitive equipment is required:

12

1

11

2

10

3

9

GND

4

8

5

7

6

Micro QFN 2.5 mm x 1.5 mm (bottom view)

Figure 1. Pin configuration (top view)

1 Input

Output 12

2 Input

Output 11

3 Input

Output 10

4 Input

Output 9

 

5 Input

Output 8

 

6 Input

Output 7

 

LCD and camera for mobile phones

Computers and printers

Communication systems

MCU boards

Description

EMIF06-1502M12 is a 6-line, highly integrated device designed to suppress EMI/RFI noise in all systems exposed to electromagnetic interference.

This filter includes ESD protection circuitry, which prevents damage to the application when subjected to ESD surges up to 15 kV on the input pins.

Figure 2. Basic cell configuration

170 Ω

Input Output

Typical line capacitance = 14 pF @ 2.5 V

TM: IPAD is a trademark of STMicroelectronics

February 2008

Rev 4

1/10

www.st.com

ST EMIF06-1502M12 User Manual

Characteristics

EMIF06-1502M12

 

 

1 Characteristics

Table 1.

Absolute ratings (limiting values at Tamb = 25 °C unless otherwise specified)

 

Symbol

 

 

 

 

Parameter

 

 

 

 

Value

Unit

 

 

ESD IEC 61000-4-2, air discharge on input pins

 

 

 

 

15

 

VPP

ESD IEC 61000-4-2, contact discharge on input pins

 

 

 

 

8

kV

 

 

ESD IEC 61000-4-2, contact discharge on output pins

 

 

 

 

4

 

Tj

Junction temperature

 

 

 

 

 

 

125

°C

Top

Operating temperature range

 

 

 

 

 

-40 to + 85

°C

Tstg

Storage temperature range

 

 

 

 

 

-55 to +150

°C

Table 2.

Electrical characteristics (Tamb = 25 °C)

 

 

 

 

 

 

Symbol

 

 

Parameter

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VBR

Breakdown voltage

 

 

 

 

 

IF

 

 

 

IRM

Leakage current @ VRM

 

 

 

 

 

 

 

 

VRM

Stand-off voltage

 

 

 

VBR

 

 

 

 

 

V

 

Clamping voltage

 

 

 

 

 

VF

 

 

CL

 

 

 

VCL

VRM

 

 

 

 

 

 

IRM

 

 

V

 

 

 

 

 

 

 

 

 

 

 

Rd

Dynamic resistance

 

 

 

 

 

 

 

 

 

 

 

 

 

IR

 

 

 

 

 

 

 

 

 

 

 

 

IPP

Peak pulse current

 

 

 

 

 

 

 

 

 

RI/O

Series resistance between Input & Output

 

 

 

IPP

 

 

 

Cline

Input capacitance per line

 

 

 

 

 

 

 

 

 

Symbol

 

 

 

Test conditions

 

 

Min.

 

Typ.

Max.

Unit

 

VBR

 

IR = 1 mA

 

 

 

 

6

 

8

10

V

 

IRM

 

VRM = 3 V per line

 

 

 

 

 

 

100

nA

 

RI/O

 

Tolerance ± 10%

 

 

 

153

 

170

187

Ω

 

Cline

 

VLINE= 2.5 V dc, VOSC = 30 mV, F = 1 MHz

 

12

 

14

16.5

pF

Figure 3.

S21 attenuation measurement

Figure 4.

Analog cross talk measurements

 

0.00

dB

 

 

 

 

 

dB

 

 

 

 

 

 

 

 

 

 

0.00

 

 

 

 

 

 

 

 

 

 

 

 

 

-10.00

 

 

 

 

 

 

 

 

 

 

 

 

 

-20.00

 

 

 

 

 

 

 

-15.00

 

 

 

 

 

-30.00

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

-40.00

 

 

 

 

 

 

 

 

 

 

 

 

 

-50.00

 

 

 

 

 

 

 

 

 

 

 

 

 

-60.00

 

 

 

 

 

 

 

-30.00

 

 

 

 

 

-70.00

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

-80.00

 

 

 

 

 

 

 

 

 

 

F (Hz)

 

 

-90.00

 

 

F (Hz)

 

 

 

-45.00

 

1.0M

10.0M

100.0M

1.0G

-100.00

 

 

 

 

 

 

 

100.0k

100.0k

1.0M

10.0M

100.0M

1.0G

 

 

 

 

 

 

 

 

 

2/10

EMIF06-1502M12

Ordering information scheme

 

 

Figure 5. ESD response to IEC 61000-4-2

Figure 6. ESD response to IEC 61000-4-2

(+15 kV air discharge) on one input

(- 15 kV air discharge) on one input

(Vin) and on one output (Vout)

(Vin) and on one output (Vout)

 

Vin

 

C1 = 10 V/d

C1 = 10 V/d

Vin

Vout

C2 = 5 V/d

100 ns/d

C2 = 5 V/d

Vout

100 ns/d

Figure 7. Line capacitance versus reverse voltage applied (typical value)

CLINE(pF)

 

 

 

 

 

 

 

 

 

24

 

 

 

 

 

 

 

 

 

 

22

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

18

 

 

 

 

 

 

 

 

 

 

16

 

 

 

 

 

 

 

 

 

 

14

 

 

 

 

 

 

 

 

 

 

12

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

8

 

 

 

 

 

 

 

 

 

 

6

 

 

 

 

 

 

 

 

 

 

4

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

VLINE(V)

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

2 Ordering information scheme

Figure 8. Ordering information scheme

EMIF yy - xxx z Mx

EMI Filter

Number of lines

Information

x = resistance value (Ohms) z = capacitance value / 10(pF)

Package

Mx = Micro QFN x leads

3/10

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