ST EMIF06-1005M12 User Manual

EMIF06-1005M12

6-line IPAD™

low capacitance EMI filter and ESD protection in micro QFN package

Features

■ EMI symmetrical (I/O) low-pass filter

■ High efficiency in EMI filtering: -34 dB at

frequencies from 900 MHz to 1.8 GHz

■ Very low PCB space consumption:

2.5 mm x 1.5 mm

■ Very thin package: 0.6 mm max

■ High efficiency in ESD suppression on inputs

pins (IEC 61000-4-2 level 4)

■ High reliability offered by monolithic integration

■ High reduction of parasitic elements through

integration and wafer level packaging

■ Lead-free package

Complies with following standards:

■ IEC 61000-4-2 level 4 input and output pins

– 15 kV (air discharge)
– 8 kV (contact discharge)

■ MIL STD 883G - Method 3015-7 Class 3B

(all pins)

Applications

12

10

11

GND

9

8

7

1

2

3

4

5

6

Micro QFN 2.5 mm x 1.5 mm

(bottom view)

Figure 1. Pin configuration (top view)

1 Input Output 12

2 Input

3 Input

4 Input

5 Input

6 Input

Output 11

Output 10

Output 9

Output 8

Output 7

Where EMI filtering in ESD sensitive equipment is
required:

■ LCD and camera for mobile phones

■ Computers and printers

■ Communication systems

■ MCU boards

Description

Figure 2. Basic cell configuration

Input

Typical line capacitance = 45 pF @ 0 V

100 Ω

Output

EMIF06-1005M12 is a 6-line, highly integrated
device designed to suppress EMI/RFI noise in all
systems exposed to electromagnetic interference.

This filter includes ESD protection circuitry, which
prevents damage to the application when
subjected to ESD surges up to 15 kV on the input
pins.

February 2008 Rev 3 1/10

TM: IPAD is a trademark of STMicroelectronics

www.st.com

Characteristics EMIF06-1005M12

1 Characteristics

Table 1. Absolute ratings (limiting values at T

= 25 °C unless otherwise specified)

amb

Symbol Parameter Value Unit

V

T

T

Table 2. Electrical characteristics (T

ESD IEC 61000-4-2, air discharge

PP

ESD IEC 61000-4-2, contact discharge

Junction temperature 125 °C

T

j

Operating temperature range -40 to + 85 °C

op

Storage temperature range -55 to +150 °C

stg

Symbol Parameter

V

I

V

V

R

I

R

C

Breakdown voltage

BR

Leakage current @ V

RM

Stand-off voltage

RM

Clamping voltage

CL

Dynamic resistance

d

Peak pulse current

PP

Series resistance between Input & Output

I/O

Input capacitance per line

line

RM

amb

= 25 °C)

I

I

F

V

BR

V

V

RM

CL

I

RM

I

R

I

PP

15
15

V

F

V

Symbol Test conditions Min. Typ. Max. Unit

kV

V

BR

V

F

I

RM

R

I/O

C

line

IR = 1 mA 6 8 10 V

IF = 10 mA 0.5 1.0 1.5

VRM = 3 V per line 200 nA

Tolerance ± 10% 90 100 110 Ω

V

= 0 V dc, V

LINE

= 30 mV, F = 1 MHz 38 45 52 pF

OSC

Figure 3. S21 attenuation measurement Figure 4. Analog cross talk measurements

dB

0.00

-10.00

-20.00

-30.00

F (Hz)

-40.00

100.0k 1.0M 10.0M 100.0M 1.0G

0.00

- 10.00

- 20.00

- 30.00

- 40.00

- 50.00

- 60.00

- 70.00

- 80.00

- 90.00

- 100.00

dB

F (Hz)

1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G

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EMIF06-1005M12 Ordering information scheme

Figure 5. ESD response to IEC 61000-4-2

(+15 kV air discharge) on one input
(V

) and on one output (V

in

out

)

Figure 6. ESD response to IEC 61000-4-2

(- 15 kV air discharge) on one input
(Vin) and on one output (V

Figure 7. Line capacitance versus reverse voltage applied (typical value)

(pF)

C

LINE

50.00

45.00

40.00

35.00

30.00

25.00

20.00

15.00

10.00

5.00

0.00
0123 45

V

(V)

LINE

out

)

2 Ordering information scheme

Figure 8. Ordering information scheme

EMI Filter

Number of lines

Information

x = resistance value (Ohms)
z = capacitance value / 10(pF)

Package

Mx = Micro QFN x leads

EMIF yy - xxx z Mx

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