ST EMIF06-1002F2 User Manual

EMIF06-1002F2

6-line IPAD™, EMI filter and ESD protection

Features

■Lead-free package

■Very low PCB space consumption 1.92 mm x 1.79 mm

■Very thin package: 0.65 mm

■High efficiency in ESD suppression (IEC 61000-4-2 level 4 on external pins)

■High reliability offered by monolithic integration

■High reduction of parasitic elements through integration and wafer level packaging

Flip Chip (14 bumps)

Complies with the following standards

■IEC 61000-4-2 level 4:

–15 kV (air discharge)

–8 kV (contact discharge)

Application

This device is designed for EMI filtering in ESD sensitive equipment such as mobile phones.

Description

The EMIF06-1002F2 is a highly integrated device designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interference. The EMIF06-1002F2 Flip Chip packaging means the package size is equal to the die size.

This filter includes an ESD protection circuitry which prevents damage to the application when subjected to ESD surges up 15 kV. This device includes 6 EMI filters.

TM: IPAD is a trademark of STMicroelectronics.

Figure 1. Pin configuration (bump side)

4	3	2	1
I2			O2	A
	I1	O1		B
I3			O3	C
	GND	GND		D
I4			O4	E
	I6	O6		F
I5			O5	G

Figure 2. Basic cell configuration

External pin

Internal pin

March 2010

Doc ID 14730 Rev 2

1/7

www.st.com

Electrical characteristics	EMIF06-1002F2

1 Electrical characteristics

Table 1.

Absolute maximum ratings(1)

Symbol

Parameter

Value

Unit

ESD discharge IEC 61000-4-2, level 4 on external pins (I1 to I6)

Air discharge

15

VPP

Contact discharge

8

kV

Air discharge on internal pins (O1 to O6)

2

Contact discharge on internal pins (O1 to O6)

2

Tj

Junction temperature range

-30 to 125

°C

Tstg

Storage temperature range

-55 to 150

°C

1. (Tamb = 25 °C)

Table 2.

Electrical characteristics(1)

Symbol

Parameters

I

VBR

Breakdown voltage

IF

IRM

Leakage current @ VRM

VRM

Stand-off voltage

VF

VCL

Clamping voltage

VCL VBR VRM

V

IRM

Rd

Dynamic impedance

IR

IPP

Peak pulse current

RI/O

Series resistance between input and

output

IPP

Cline

Input capacitance per line

Symbol

Test conditions

Min

Typ

Max

Unit

VBR

IR = 1 mA

6

V

IRM

VRM = 3 V

200

nA

RI/O

80

100

120

Ω

Cline

VR = 3 V DC, F = 1 MHz

9.2

11.5

13.8

pF

FC

Cut-off frequency (Zsource = Zload = 50 Ω)

280

MHz

1. (Tamb = 25 °C)

2/7	Doc ID 14730 Rev 2

EMIF06-1002F2							Electrical characteristics
Figure 3. S21 attenuation measurements					Figure 4. Analog crosstalk measurements
dB					dB
0.00
					0.00
-5.00					-10.00
					-20.00
-10.00					-30.00
					-40.00
-15.00					-50.00
-20.00					-60.00
					-70.00
-25.00					-80.00
					-90.00
-30.00					-100.00
					-110.00
-35.00		F (Hz)			-120.00			F (Hz)
					-130.00
-40.00					-140.00
100.0k	1.0M	10.0M	100.0M	1.0G	100.0k	1.0M	10.0M	100.0M	1.0G
	I1 - O1		I2 - O2			I1 - O2		I1 - O6
	I3 - O3		I4 - O4
	I5 - O5		I6 - O6

Figure 5. ESD response to IEC61000-4-2	Figure 6. ESD response to IEC61000-4-2
(+ 15 kV air discharge) on one input	(- 15 kV air discharge) on one input
(Vin) and one output (Vout)	(Vin) and one output (Vout)

Figure 7. Line capacitance versus applied voltage for filter

C(pF)
18
16				F=1MHz
14				Vosc=30mVRMS
				Tj=25°C
12
10
8
6
4			VLINE(V)
2
0
0	1	2	3	4	5

Doc ID 14730 Rev 2

3/7