ST EMIF06-10006C2 User Manual

IPAD™

Main product characteristics

EMIF06-10006C2

6 line EMI filter and ESD protection

Where EMI filtering in ESD sensitive equipment is required:

■ Mobile phones and communication systems

■ Computers, printers and MCU Boards

Description

The EMIF06-10006C2 is a highly integrated device designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interference. The EMIF06 Flip-Chip packaging means the package size is equal to the die size.

This filter includes an ESD protection circuitry which prevents damage to the application when subjected to ESD surges up 15 kV. This device includes 6 EMIF filters.

Benefits

■ EMI symmetrical (I/O) low-pass filter

■ High efficiency in EMI filtering

■ Lead free coated package

■ Very low PCB space consumption

2.92 mm x 1.29 mm

■ Very thin package: 0.695 mm

■ High efficiency in ESD suppression

(IEC 61000-4-2 level 4)

■ High reliability offered by monolithic integration

■ High reduction of parasitic elements through

integration and wafer level packaging

®

Flip-Chip

(15 Bumps)

Order Code

Part Number Marking

EMIF06-10006C2 FT

Figure 1. Pin Configuration (bump side)

987 654 321

I6

I5

Gnd Gnd Gnd

O5

O4

O6

Complies with the following standards:

IEC 61000-4-2 level 4:

15 kV (air discharge)

8 kV (contact discharge)

MIL STD 883G - Method 3015-7 Class 3: 30 kV

I3

I4

O3

I2

O2

I1

O1

A

B

C

TM: IPAD is a trademeark of STMicroelectronics

November 2006 Rev 1 1/9

www.st.com

9

Characteristics EMIF06-10006C2

1 Characteristics

Figure 2. Basic cell configuration

Input 1

100 Ω

Output 1 Input 4

30 pF 30 pF

100 Ω

Output 4

30 pF 30 pF

Input 2 Output 2

Input 3 Output 3

Table 1. Absolute Ratings (limiting values)

100 Ω

30 pF 30 pF

100 Ω

30 pF 30 pF

Input 5

Input 6

100 Ω

Output 5

30 pF 30 pF

100 Ω

Output 6

30 pF 30 pF

Symbol Parameter and test conditions Value Unit

P

T

Table 2. Electrical Characteristics (T

Symbol Parameter

V

I

RM

V

R

I

PP

R

C

DC power per resistance 0.1 W

R

Total DC power per package 0.6 W

T

Maximum junction temperature 125 ° C

T

j

Operating temperature range - 40 to + 85 ° C

op

Storage temperature range 125 ° C

stg

= 25 °C)

amb

I

Breakdown voltage

BR

I

F

Leakage current @ VRM

Stand-off voltage

RM

Clamping voltage

CL

Dynamic impedance

d

VCL

VRMVBR

IRM IR

Peak pulse current

Series resistance between Input and output

I/O

Capacitance per line

line

IPP

VF

Symbol Test conditions Min. Typ. Max. Unit

V

I

RM

R

C

IR = 1 mA 5.5 7 9 V

BR

VRM = 3.3 V per line 500 nA

I = 10 mA 80 100 120 Ω

I/O

VR = 2.5 V, F = 1 MHz, 30 mV (on filter cells) 50 60 70 pF

line

2/9

EMIF06-10006C2 Characteristics

Figure 3. S21 (db) attenuation measurements

Figure 4. Analog crosstalk measurements

and Aplac simulation

Aplac 7.62 User: ST Microelectronics

0.00

dB

-12.50

-25.00

-37.50

-50.00

100.0k 1.0M 10.0M 100.0M 1.0G

Measurement

Simulation

f/Hz

00

-25

-50

-75

-100

100k

Aplac 7.62 User: ST Microelectronics

dBdB

1M

i3_o2.s2p

f/Hz

10M 100M 1G

Figure 5. Digital crosstalk measurements Figure 6. ESD response to IEC 61000-4-2

(+15 kV air discharge) on one imput (V

) and one output (V

in

out

)

Figure 7. ESD response to IEC 61000-4-2

(–15 kV air discharge) on one imput (V

) and one output (V

in

out

)

Figure 8. Line capacitance versus applied

voltage for filter

C(pF)

100

90

80

70

60

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

V (V)

R

3/9

V

osc

F=1MHz

=30mV

Tj=25°C

RMS