®
4 LINES LOW CAPACITANCE EMI FILTER
IPAD™
MAIN APPLICATION
Where EMI filtering in ESD sensitive equipment is
required:
■ LCD and camera for mobile phones
■ Computers and printers
■ Communication systems
■ MCU board
EMIF04-VID01F2
AND ESD PROTECTION
®
DESCRIPTION
The EMIF04-VID01F2 is a 4 lines highly integrated
array designed to suppress EMI / RFI noise in all
systems subjected to electromagnetic interferences.
The EMIF04-VID01F2 Flip-Chip packaging means
the package size is equal to the die size.
Additionally, this filter includes an ESD protection
circuitry which prevents the protected device from
destruction when subjected to ESD surges up to
15 kV.
BENEFITS
■ High efficiency EMI filtering (-40db @ 900MHz)
■ Low line capacitance suitable for high speed
data bus
■ Low serial resistance for camera impedance
adaptation
■ Lead free package
■ Optimized PCB space consuming:
1.92mm x 1.29mm
■ Very thin package: 0.65 mm
■ High efficiency in ESD suppression on inputs
pins (IEC61000-4-2 level 4)
■ High reliability offered by monolithic integration
■ High reducing of parasitic elements through
integration & wafer level packaging
■ Reduce compnents counts and BOM
COMPLIES WITH THE FOLLOWING STANDARDS:
IEC61000-4-2
Level 4 on input pins 15kV (air discharge)
8kV (contact discharge)
MIL STD 883E - Method 3015-6 Class 3
Flip-Chip
(10 Bumps)
Table 1: Order Code
Part Number Marking
EMIF04-VID01F2 GU
Figure 1: Pin Configuration (ball side)
654 321
I3
I4
Gnd Gnd
O4
O3
I2
O2
I1
O1
Figure 2: Configuration
R
Input
R = 100
C = 16pF typ. @ 3V
Ω
LINE
A
B
C
Output
TM: IPAD is a trademark of STMicroelectronics.
REV. 1February 2005
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EMIF04-VID01F2
Table 2: Absolute Ratings (limiting values)
Symbol Parameter and test conditions Value Unit
T
T
op
T
stg
Maximum junction temperature 125 °C
j
Operating temperature range - 40 to + 85 °C
Storage temperature range - 55 to + 150 °C
Table 3: Electrical Characteristics (T
Symbol Parameter
V
I
RM
V
Breakdown voltage
BR
Leakage current @ V
Stand-off voltage
RM
RM
R Series resistance between Input &
Output
C
Input capacitance per line
line
amb
= 25°C)
I
IR
IRM
VRMVBR
IRM
IR
V
V
BRVRM
Symbol Test conditions Min. Typ. Max. Unit
V
I
BR
RM
IR = 1mA
VRM = 3V per line
6810V
500 nA
R I = 10mA 80 100 120 Ω
C
line
VR = 3V DC 1MHz V
OSC
= 30mV
16 19 pF
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