ST EMIF04-EAR02M8 User Manual
4-line IPAD™ EMI filter and ESD protection for headset
Features
■ lead-free package
■ high attenuation: -30 dB at 900 MHz
■ low cut-off frequencies: 60 MHz for speaker
lines
■ high current capability: 50 mA per line
■ very low PCB space consumption:
1.5 mm x 1.7 mm
■ very thin package: 0.6 mm maximum
■ high efficiency in ESD suppression
IEC6 1000-4-2 level 4
■ high reliability offered by monolithic integration
Complies with following standards:
■ IEC 61000-4-2 level 4 all pins:
– 15 kV (air discharge)
– 8 kV (contact discharge)
EMIF04-EAR02M8
µQFN-8L
Figure 1. Pin configuration (bottom side)
MIC_P_Ext
MIC_N_Ext
EAR_Ext
EAR_Ext
GND
MIC_P_Int
MIC_N_Int
EAR_Int
EAR_Int
Application
■ mobile phones
Figure 2. Equivalent circuit
R
R
R
MIC
MIC
MIC
C
C
C
L_MIC
L_MIC
L_MIC
Description
The EMIF04-EAR02M8 chip is a highly integrated
device designed to suppress EMI/RFI noise for
mobile phone headsets. The new LC architecture
on the speaker lines provides a high attenuation
value maintaining a very low serial resistance.
The µQFN-8L package offers the possibility to
integrate the whole function in a very small PCB
space.
Additionally, this filter includes ESD protection
circuitry, which prevents damage to the protected
device when subjected to ESD surges up 30 kV.
TM: IPAD is a trademark of STMicroelectronics
September 2010 Doc ID 15508 Rev 2 1/12
C
C
C
R
R
R
L_MIC
L_MIC
L_MIC
L
L
L
C
C
C
L
L
L
C
C
C
MIC
MIC
MIC
EAR
EAR
EAR
L_EAR
L_EAR
L_EAR
EAR
EAR
EAR
L_EAR
L_EAR
L_EAR
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12
Characteristics EMIF04-EAR02M8
1 Characteristics
Table 1. Absolute maximum ratings (T
Symbol Parameter Value Unit
ESD IEC 61000-4-2
V
PP
air discharge
contact discharge
I
T
Maximum rms current per channel 50 mA
EAR
Operating junction temperature -30 to 125 °C
T
j
Storage temperature range -55 to +150 °C
stg
Figure 3. Electrical symbols and parameters
amb
= 25 °C)
30
30
kV
Breakdown voltage
V
BR
V
Stand-off voltage
RM
Leakage current @ V
I
RM
V
V
BR
RM
Table 2. Electrical characteristics (T
amb
I
RM
I
RM
I
RM
= 25 °C)
V
V
V
RM
BR
Symbol Test conditions Min. Typ. Max. Unit
V
BRIR
I
RM
L
EAR
R
L
R
MIC
C
L_EARVR
C
L_MICVR
F
c_EAR
F
c_MIC
= 1 mA 7 V
VRM = 3 V 100 nA
1.5 nH
Parasitic resistance of inductor L
EAR
0.30 0.6 Ω
54 68 82 Ω
= 0 V DC, 1 MHz 84 105 126 pF
= 0 V DC, 1 MHz 60 76 92 pF
Cut-off frequency earphone line:
Z
SOURCE
= Z
LOAD
= 50 Ω
Cut-off frequency microphone line:
Z
SOURCE
= Z
LOAD
= 50 Ω
60 MHz
70 MHz
2/12 Doc ID 15508 Rev 2
EMIF04-EAR02M8 Characteristics
Figure 4. S21 attenuation measurement Figure 5. Analog cross talk measurements
dB
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
MIC_N
MIC_P
EAR_R
EAR_L
F (Hz)
100k 1M 10M 100M 1G
Figure 6. ESD response to IEC 61000-4-2
(+15 kV air discharge) on one MIC
input (V
IN
) and on one MIC output
in
5.00 V/div
dB
0
-10
-20
-30
-40
-50
-60
-70
100k 1M 10M 100M 1G
MIC_N - MIC_P
EAR_L - MIC_P
F (Hz)
Figure 7. ESD response to IEC 61000-4-2
(-15 kV air discharge) on one MIC
input (Vin) and on one MIC output
5.00 V/div
IN
OUT
100 ns/div
5.00 V/div
Figure 8. ESD response to IEC 61000-4-2
(+15 kV air discharge) on one EAR
input (V
IN
OUT
) and on one EAR output
in
5.00 V/div
5.00 V/div
100 ns/div
5.00 V/div
OUT
100 ns/div
Figure 9. ESD response to IEC 61000-4-2
(-15 kV air discharge) on one EAR
input (Vin) and on one EAR output
5.00 V/div
IN
5.00 V/div
OUT
100 ns/div
Doc ID 15508 Rev 2 3/12
Characteristics EMIF04-EAR02M8
Figure 10. Relative line capacitance variation
versus applied voltage
C/C0
1.0
MIC lines
EAR lines
0.8
V (V)
0.6
0
1
2
3
R
4
Figure 12. Total harmonic distortion with
noise: MIC lines, R = 32 Ω
THD + N (dB)
0
-50
Figure 11. Total harmonic distortion with
noise: MIC lines, R = 10 kΩ
THD + N (dB)
0
-50
-100
5
100
1 k
Figure 13. Total harmonic distortion with
noise: EAR lines, R = 32 Ω
THD + N (dB)
0
-50
F (Hz)
10 k
-100
100
F (Hz)
1 k
10 k
-100
100
Figure 14. Total harmonic distortion with noise: EAR lines, R = 8 Ω
THD + N (dB)
0
-50
-100
100
1 k
F (Hz)
10 k
1 k
F (Hz)
10 k
4/12 Doc ID 15508 Rev 2
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