ST EMIF04-1502M8 User Manual

low capacitance EMI filter and ESD protection in micro QFN package

Features

■ EMI asymmetrical (I/O) low-pass filter

■ High efficiency in EMI filtering

■ Very low PCB space consumption:

1.7 mm x 1.5 mm

■ Very thin package: 0.6 mm max

■ High efficiency in ESD suppression on input

pins (IEC 61000-4-2 level 4)

■ High reliability offered by monolithic integration

■ High reducing of parasitic elements through

integration and wafer level packaging

■ Lead-free package

EMIF04-1502M8

4-line IPAD™

8

7

6

5

Micro QFN 1.7 mm x 1.5 mm

GND

(bottom view)

Figure 1. Pin configuration (top view)

1 Input Output 8

1

2

3

4

Complies with following standards:

■ IEC 61000-4-2 level 4 input pins

– 15 kV (air discharge) – 8 kV (contact discharge)

■ MIL STD 883G - Method 3015-7 Class 3A

(all pins)

Applications

Where EMI filtering in ESD sensitive equipment is required:

■ LCD and camera for mobile phones

■ Computers and printers

■ Communication systems

■ MCU boards

Description

The EMIF04-1502M8 is a 4-line, highly integrated device designed to suppress EMI/RFI noise in all systems exposed to electromagnetic interference.

This filter includes an ESD protection circuitry, which prevents damage to the application when subjected to ESD surges up to 15 kV on the input pins.

2 Input

3 Input

4 Input

Figure 2. Basic cell configuration

Input

Typical line capacitance = 14 pF @ 2.5 V

TM: IPAD is a trademark of STMicroelectronics

170 Ω

Output 7

Output 6

Output 5

Output

January 2009 Rev 6 1/10

www.st.com

Characteristics EMIF04-1502M8

1 Characteristics

Table 1. Absolute ratings (limiting values at T

= 25° C unless otherwise specified)

amb

Symbol Parameter Value Unit

ESD IEC 61000-4-2 air discharge on input pins

V

ESD IEC 61000-4-2 contact discharge on input pins

PP

ESD IEC 61000-4-2 contact discharge on output pins

Junction temperature 125 °C

T

j

T

Table 2. Electrical characteristics (T

Operating temperature range -40 to + 85 °C

op

Storage temperature range -55 to +150 °C

stg

Symbol Parameter

V

I

V

R

I

R

C

BR

RM

CL

PP

I/O

line

Breakdown voltage

Leakage current @ V

RM

Stand-off voltage

Clamping voltage

Dynamic resistance

d

Peak pulse current

Series resistance between Input & Output

Input capacitance per line

amb

= 25° C)

I

F

V

BR

V

RM

CL

I

RM

I

R

I

PP

15

8 4

V

F

V

kV

Symbol Test conditions Min. Typ. Max. Unit

V

BR

I

RM

R

I/O

C

line

IR = 1 mA 6 8 10 V

VRM = 3 V per line 100 nA

Tolerance ± 10% 153 170 187 Ω

V

= 2.5 V dc, V

LINE

= 30 mV, F = 1 MHz 12 14 16.5 pF

OSC

Figure 3. S21 attenuation measurement Figure 4. Analog cross talk measurements

dB

0.00

-15.00

-30.00

F (Hz)

-45.00

100.0k 1.0M 10.0M 100.0M 1.0G

dB

0.00

-10.00

-20.00

-30.00

-40.00

-50.00

-60.00

-70.00

-80.00

-90.00

-100.00

100.0k 1.0M 10.0M 100.0M 1.0G

F (Hz)

2/10

EMIF04-1502M8 Ordering information scheme

Figure 5. ESD response to IEC 61000-4-2

V

in

V

out

(+15 kV air discharge) on one input (V

) and on one output (V

in

)

out

C1 = 10 V/d

C2 = 5 V/d

100 ns/d

Figure 6. ESD response to IEC 61000-4-2

(- 15 kV air discharge) on one input (Vin) and on one output (V

V

in

V

out

Figure 7. Line capacitance versus reverse voltage applied (typical value)

C

(pF)

LINE

24 22 20 18 16 14 12 10

8 6 4 2 0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

V

(V)

LINE

)

out

C1 = 10 V/d

C2 = 5 V/d

100 ns/d

2 Ordering information scheme

Figure 8. Ordering information scheme

EMI Filter

Number of lines

Information

x = resistance value (Ohms) z = capacitance value / 10(pF)

Package

Mx = Micro QFN x leads

3/10

EMIF yy - xxx z Mx