ST EMIF04-1005M8 User Manual
EMIF04-1005M8
4-line IPAD™ low capacitance EMI filter and ESD protection in micro QFN package
Features
■EMI symmetrical (I/O) low-pass filter
■High efficiency in EMI filtering: -34 dB at frequencies from 900 MHz to 1.8 GHz
■Very low PCB space consumption: 1.7 mm x 1.5 mm
■Very thin package: 0.6 mm max
■High efficiency in ESD suppression on input pins (IEC 61000-4-2 level 4)
■High reliability offered by monolithic integration
■High reduction of parasitic elements through integration and wafer level packaging
■Lead-free package
Complies with following standards:
■IEC 61000-4-2 level 4 input pins
–15 kV (air discharge)
–8 kV (contact discharge)
■MIL STD 883G - Method 3015-7 Class 3B (all pins)
Applications
Where EMI filtering in ESD sensitive equipment is required:
■LCD and camera for mobile phones
■Computers and printers
■Communication systems
■MCU boards
Description
The EMIF04-1005M8 is a 4-line highly integrated device designed to suppress EMI/RFI noise in all systems exposed to electromagnetic interference.
This filter includes an ESD protection circuitry, which prevents damage to the application when subjected to ESD surges up to 15 kV on the input pins.
8 |
1 |
7GND 
2
GND
6 |
3 |
5 |
4 |
Micro QFN 1.7 mm x 1.5 mm (bottom view)
Figure 1. Pin configuration (top view)
1 Input |
Output 8 |
2 Input |
Output 7 |
3 Input |
Output 6 |
4 Input |
Output 5 |
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Figure 2. Basic cell configuration
100 Ω
Input 
Output
Typical line capacitance = 45 pF @ 0 V
TM: IPAD is a trademark of STMicroelectronics
January 2009 |
Rev 5 |
1/10 |
www.st.com
Characteristics |
EMIF04-1005M8 |
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1 Characteristics
Table 1. |
Absolute ratings (limiting values at Tamb = 25 °C unless otherwise specified) |
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Symbol |
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Parameter |
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Value |
Unit |
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VPP |
ESD IEC 61000-4-2, air discharge |
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15 |
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kV |
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ESD IEC 61000-4-2, contact discharge |
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15 |
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Tj |
Junction temperature |
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125 |
°C |
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Top |
Operating temperature range |
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-40 to + 85 |
°C |
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Tstg |
Storage temperature range |
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-55 to +150 |
°C |
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Table 2. |
Electrical characteristics (Tamb = 25 °C) |
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Symbol |
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Parameter |
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I |
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VBR |
Breakdown voltage |
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IF |
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IRM |
Leakage current @ VRM |
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VRM |
Stand-off voltage |
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VBR |
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VCL |
Clamping voltage |
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VF |
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VCL |
VRM |
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IRM |
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V |
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Rd |
Dynamic resistance |
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IR |
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IPP |
Peak pulse current |
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RI/O |
Series resistance between Input & Output |
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IPP |
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Cline |
Input capacitance per line |
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Symbol |
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Test conditions |
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Min. |
Typ. |
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Max. |
Unit |
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VBR |
IR = 1 mA |
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6 |
8 |
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10 |
V |
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VF |
IF = 10 mA |
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0.5 |
1.0 |
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1.5 |
V |
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IRM |
VRM = 3 V per line |
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200 |
nA |
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RI/O |
Tolerance ± 10% |
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90 |
100 |
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110 |
Ω |
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Cline |
VLINE = 0 V dc, VOSC = 30 mV, F = 1 MHz |
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38 |
45 |
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52 |
pF |
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Figure 3. |
S21 attenuation measurement |
Figure 4. Analog cross talk measurements |
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dB |
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dB |
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0.00 |
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0.00 |
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-20.00 |
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-10.00 |
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-40.00 |
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-20.00 |
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-60.00 |
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-80.00 |
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-30.00 |
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-100.00 |
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F (Hz) |
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F (Hz) |
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-40.00 |
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-120.00 |
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100.0k |
1.0M |
10.0M |
100.0M |
1.0G |
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100.0k |
1.0M |
10.0M |
100.0M |
1.0G |
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EMIF04-1005M8 |
Ordering information scheme |
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Figure 5. ESD response to IEC 61000-4-2 |
Figure 6. ESD response to IEC 61000-4-2 |
(+15 kV air discharge) on one input |
(- 15 kV air discharge) on one input |
(Vin) and on one output (Vout) |
(Vin) and on one output (Vout) |
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Figure 7. Line capacitance versus reverse voltage applied (typical value)
50.00CLINE (pF) |
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45.00 |
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40.00 |
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35.00 |
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30.00 |
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25.00 |
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20.00 |
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15.00 |
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10.00 |
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5.00 |
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VLINE (V) |
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0.00 |
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0 |
1 |
2 |
3 |
4 |
5 |
2 Ordering information scheme
Figure 8. Ordering information scheme
EMIF yy - xxx z Mx
EMI Filter
Number of lines
Information
x = resistance value (Ohms) z = capacitance value / 10(pF)
Package
Mx = Micro QFN x leads
3/10
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