ST EMIF03-SIM04F3 User Manual

EMIF03-SIM04F3

3-line IPAD™, EMI filter including ESD protection

Features

■EMI symmetrical (I/O) low-pass filter

■high efficiency in EMI/ESD protection

■lead-free package

■very thin package

■high reliability offered by monolithic integration

■high reduction of parasitic elements through integration and wafer level packaging

Complies with the following standards

■IEC 61000-4-2 level 4:

–± 15 kV (air discharge)

–± 8 kV (contact discharge)

■IEC 61000-4-2 level 1:

–± 2 kV (air discharge)

–± 2 kV (contact discharge)

Applications

Where EMI filtering in ESD sensitive equipment is required:

■mobile phones and communication systems

■computers, printers and MCU Boards

Description

The EMIF03-SIM04F3 Flip Chip is a low capacitance EMI filter designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interference.

This filter includes ESD protection circuitry, which prevents damage to the protected device when subjected to ESD surges up to 15 kV.

Lead-free Flip-Chip package (11 bumps)

Figure 1. Pin configuration (bump side)

	1	2	3
			A
			B
			C
			D
Figure 2.	Configuration
			D1	D2	D3
A1		100 Ω			A3
		R1
B1		47 Ω			B3
		R2
C1		100 Ω			C3
		R3
A2			C2
GND			GND
A2 and C2 bumps must be connected together on the PCB

TM: IPAD is a trademark of STMicroelectronics.

October 2010

Doc ID 17053 Rev 2

1/7

www.st.com

Electrical characteristics	EMIF03-SIM04F3

1 Electrical characteristics

Table 1.	Absolute maximum ratings (Tamb = 25 °C)
Symbol	Parameter	Value	Unit
	Internal pins (A1, B1, C1):
	ESD discharge IEC 61000-4-2, level 1, air discharge	±2
VPP	ESD discharge IEC 61000-4-2, level 1, contact discharge	±2	kV
	External pins (A3, B3, C3, D1, D2 and D3):
	ESD discharge IEC 61000-4-2, level 4, air discharge	±15
	ESD discharge IEC 61000-4-2, level 4, contact discharge	±15
Pd	Line resistance power dissipation at 70 °C	60	mW
Top	Operating temperature range	- 40 to + 85	°C
Tstg	Storage temperature range	- 55 to 150	°C

Figure 3. Electrical characteristics (definitions)

Symbol		Parameter
VBR	=	Breakdown voltage
IRM	=	Leakage current @ VRM
RI/O	=	Series resistance
		between input and output
Cline	=	Line capacitance

	I
	IR
VBR VRM	IRM	V
	IRM
		VRM VBR
	IR

Table 2.	Electrical characteristics (Tamb = 25 °C)
Symbol	Test conditions		Min.	Typ.	Max.	Unit
VBR	IR = 1 mA		6			V
IRM	VRM = 3 V per line			50	200	nA
R1, R3	Tolerance ± 20%		80	100	120	Ω
R2	Tolerance ± 20%		37.6	47	56.4	Ω
Cline	Vline = 0 V, Vosc = 30 mV, F = 1 MHz	(1)	8	10	12	pF
	(measured under zero light conditions)

1. A2 and C2 bumps must be connected together on the printed circuit board

2/7	Doc ID 17053 Rev 2

EMIF03-SIM04F3								Electrical characteristics
Figure 4. S21 (dB) attenuation measurement					Figure 5. S21 (dB) analog crosstalk
B3 - B1						measurements C3 - A1
0.00 S21 (dB)						0.00 S21 (dB)
-10.00						-20.00
-20.00						-40.00
-30.00						-60.00
-40.00						-80.00
-50.00				F (Hz)		-100.00				F (Hz)
100.0k	1.0M	10.0M	100.0M	1.0G		100.0k	1.0M	10.0M	100.0M	1.0G
Figure 6. ESD response to IEC 61000-4-2					Figure 7. ESD response to IEC 61000-4-2
(+15 kV air discharge) on one line						(-15 kV air discharge) on one line
20 V/Div				100 ns/dIV	C2	10 V/Div
IN						IN
C2										100 ns/Div
10 V/Div					C3
OUT						OUT
C3				100 ns/dIV		10 V/Div				100 ns/Div

Figure 8. Digital crosstalk measurement

1 V/Div

IN

C2

20 ns/Div

500 mV/Div OUT

C3

20 ns/Div

Doc ID 17053 Rev 2

3/7