ST EMIF03-SIM04F3 User Manual

3-line IPAD™, EMI filter including ESD protection

Features

■ EMI symmetrical (I/O) low-pass filter

■ high efficiency in EMI/ESD protection

■ lead-free package

■ very thin package

■ high reliability offered by monolithic integration

■ high reduction of parasitic elements through

integration and wafer level packaging

Complies with the following standards

■ IEC 61000-4-2 level 4:

– ± 15 kV (air discharge)
– ± 8 kV (contact discharge)

■ IEC 61000-4-2 level 1:

– ± 2 kV (air discharge)
– ± 2 kV (contact discharge)

Applications

EMIF03-SIM04F3

Lead-free Flip-Chip package

(11 bumps)

Figure 1. Pin configuration (bump side)

1 2 3

A

B

C

D

Where EMI filtering in ESD sensitive equipment is
required:

■ mobile phones and communication systems

■ computers, printers and MCU Boards

Description

The EMIF03-SIM04F3 Flip Chip is a low
capacitance EMI filter designed to suppress
EMI/RFI noise in all systems subjected to

Figure 2. Configuration

D1 D3D2

A1

B1

C1

A2

GND

A2 and C2 bumps must be connected together on the PCB

100 Ω

R1

47 Ω

R2

100 Ω

R3

C2

GND

electromagnetic interference.

This filter includes ESD protection circuitry, which
prevents damage to the protected device when
subjected to ESD surges up to 15 kV.

TM: IPAD is a trademark of STMicroelectronics.

October 2010 Doc ID 17053 Rev 2 1/7

A3

B3

C3

www.st.com

7

Electrical characteristics EMIF03-SIM04F3

1 Electrical characteristics

Table 1. Absolute maximum ratings (T

Symbol Parameter Value Unit

Internal pins (A1, B1, C1):

ESD discharge IEC 61000-4-2, level 1, air discharge

V

PP

P

d

T

op

ESD discharge IEC 61000-4-2, level 1, contact discharge

External pins (A3, B3, C3, D1, D2 and D3):

ESD discharge IEC 61000-4-2, level 4, air discharge
ESD discharge IEC 61000-4-2, level 4, contact discharge

Line resistance power dissipation at 70 °C 60 mW

Operating temperature range - 40 to + 85 °C

amb

= 25 °C)

±2
±2

±15
±15

kV

T

Storage temperature range - 55 to 150 °C

stg

Figure 3. Electrical characteristics (definitions)

I

Symbol Parameter

V = Breakdown voltage

BR

I = Leakage current @ V

RM RM

R = Series resistance

I/O

between input and output

C = Line capacitance

line

Table 2. Electrical characteristics (T

amb

= 25 °C)

Symbol Test conditions Min. Typ. Max. Unit

V

BRIR

I

RM

R

1, R3

R

2

C

line

1. A2 and C2 bumps must be connected together on the printed circuit board

= 1 mA 6 V

VRM = 3 V per line 50 200 nA

Tolerance ± 20% 80 100 120 Ω

Tolerance ± 20% 37.6 47 56.4 Ω

V

= 0 V, V

line

(measured under zero light conditions)

= 30 mV, F = 1 MHz

osc

(1)

IR
IRM

VRMVBR

IRM
IR

V

V

BRVRM

81012pF

2/7 Doc ID 17053 Rev 2

EMIF03-SIM04F3 Electrical characteristics

Figure 4. S21 (dB) attenuation measurement

B3 - B1

S21 (dB)

0.00

-

-

-

10.00

-20.00

-

-

-30.00

-

-

-40.00

-

-

-50.00

-

-

100.0k 1.0M 10.0M 100.0M 1.0G

F (Hz)

1.0G

Figure 6. ESD response to IEC 61000-4-2

(+15 kV air discharge) on one line

20 V/Div

IN

C2

10 V/Div

OUT

100 ns/dIV

Figure 5. S21 (dB) analog crosstalk

measurements C3 - A1

S21 (dB)

0.00

-20.00

-

-40.00

-

-60.00

-

-80.00

-

100.00

-

100.0k 10.0M 100.0M 1.0G

1.0M

F (Hz)

Figure 7. ESD response to IEC 61000-4-2

(-15 kV air discharge) on one line

C2

10 V/Div

IN

100 ns/Div

C3

OUT

C3

Figure 8. Digital crosstalk measurement

1 V/Div

IN

C2

500 mV/Div

OUT

C3

100 ns/dIV

20 ns/Div

20 ns/Div

10 V/Div

100 ns/Div

Doc ID 17053 Rev 2 3/7