ST EMIF03-SIM02F3 User Manual

3-line IPAD™, EMI filter including ESD protection

Features

■ EMI symmetrical (I/O) low-pass filter

■ High efficiency in EMI filtering

■ Lead-free package

■ Very low PCB space consuming: 1.2 mm

Very thin package: 0.60 mm

■

■ High efficiency in ESD suppression

■ High reliability offered by monolithic integration

■ High reduction of parasitic elements through

integration and wafer level packaging

Complies with the following standards

■ IEC 61000-4-2 Level 4 on external and V

pins: – 15 kV (air discharge) – 8 kV (contact discharge)

■ IEC 61000-4-2 Level 1on internal pins:

– 2 kV (air discharge) – 2 kV (contact discharge)

■ MIL STD 883E - Method 3015-6 Class 3

Applications

EMI filtering and ESD protection for:

■ SIM Interface (subscriber identify module)

■ UIM Interface (universal identify module)

2

cc

EMIF03-SIM02F3

Flip Chip

(8 bumps)

Figure 1. Pin configuration (bump side)

123

RST

ext

in

Gnd

V

CLK

ext

Data

CC

CLK

in

Data

in

Figure 2. Configuration

V

CC

RST in RST ext

CLK in

Data in

100 Ω

R1

47 Ω

R2

100 Ω

R3

GND

ext

A

B

C

Cline = 20 pF max.

CLK ext

Data ext

Description

The EMIF03-SIM02F3 is a highly integrated device designed to suppress EMI / RFI noise in all systems subjected to electromagnetic interferences.

This filter includes an ESD protection circuitry which prevents damage to the application when subjected to ESD surges up to 15 kV.

TM: IPAD is a trademark of STMicroelectronics.

April 2010 Doc ID 11554 Rev 5 1/9

www.st.com

9

Electrical characteristics EMIF03-SIM02F3

1 Electrical characteristics

Table 1. Absolute maximum ratings (T

Symbol Parameter and test conditions Value Unit

Internal pins (A3, B3, C3):

ESD discharge IEC 61000-4-2, air discharge

V

PP

T

j

T

op

ESD discharge IEC 61000-4-2, contact discharge

External pins (A2, B1, C2, C1):

ESD discharge IEC 61000-4-2, air discharge ESD discharge IEC 61000-4-2, contact discharge

Maximum junction temperature 125 °C

Operating temperature range -40 to +85 °C

amb

= 25 °C)

15

2 2

kV

8

T

Storage temperature range -55 to 150 °C

stg

Figure 3. Electrical characteristics (definitions)

I

Symbol Parameter

V = Breakdown voltage

BR

I = Leakage current @ V

RM RM

V = Stand-off voltage

RM

V = Clamping voltage

CL

I = Peak pulse current

PP

I = Breakdown current

R

V = Forward voltage drop

F

C = Line capacitance

line

R Series resistance between Input and Output

Table 2. Electrical characteristics (T

=

I/O

amb

= 25 °C)

V

CL

BR

Symbol Test conditions Min. Typ. Max. Unit

V

BRIR

I

RM

R

d

R

1, R3

R

2

C

line

= 1 mA 6 - 20 V

VRM = 3 V - - 0.2 µA

-1.5- Ω

Tolerance ± 20% - 100 - Ω

Tolerance ± 20% - 47 - Ω

V

line

= 0 V, V

= 30 mV, F = 1 MHz - - 20 pF

osc

I

F

V

F

V

RM

I

RM

I

R

I

PP

V

2/9 Doc ID 11554 Rev 5

EMIF03-SIM02F3 Electrical characteristics

Figure 4. S21 (dB) attenuation measurement

Figure 6. S21 (dB) attenuation measurement

(A2-A3 line)

db

0.00

-10.00

-20.00

-30.00

-40.00

100.0k 1.0M 10.0M 100.0M 1.0G

F (Hz)

a2/a3

Figure 5. S21 (dB) attenuation measurement

(B1-B3 line)

db

0.00

-10.00

-20.00

-30.00

-40.00

100.0k 1.0M 10.0M 100.0M 1.0G

F (Hz)

b1/b3

Figure 7. Analog crosstalk measurements

(C1-C3 line)

db

0.00

-10.00

-20.00

-30.00

-40.00

100.0k 1.0M 10.0M 100.0M 1.0G

F (Hz)

c1/c3

db

0.00

-10.00

-20.00

-30.00

-40.00

-50.00

-60.00

-70.00

-80.00

-90.00

-100.00

100.0k 1.0M 10.0M 100.0M 1.0G

F (Hz)

Xtalka3/b1

Figure 8. Digital crosstalk measurements Figure 9. Line capacitance versus reverse

applied voltage (typical)

Bumps A3 (RST ) and B1 (CLK )

in out

10 ns/div

C(pF)

Output Line 2 2 mV/div

18

15

12

9

Input Line 1 1 V/div

6

3

0

0246

VR(V)

Doc ID 11554 Rev 5 3/9