EMIF03-SIM02F2
3-line IPAD™, EMI filter including ESD protection
Features
■EMI symmetrical (I/O) low-pass filter
■High efficiency in EMI filtering
■Lead-free package
■Very low PCB space consuming: 1.42 mm x 1.42 mm
■Very thin package: 0.65 mm
■High efficiency in ESD suppression
■High reliability offered by monolithic integration
■High reduction of parasitic elements through integration and wafer level packaging
Complies with the following standards
■IEC 61000-4-2, Level 4 on external and Vcc pins:
–15 kV (air discharge)
–8 kV (contact discharge)
■IEC 61000-4-2, Level 1 on internal pins:
–2 kV (air discharge)
–2 kV (contact discharge)
■MIL STD 883E - Method 3015-6 Class 3
Applications
EMI filtering and ESD protection for:
■SIM Interface (Subscriber Identify Module)
■UIM Interface (Universal Identify Module)
Flip Chip (8 bumps)
3 |
2 |
1 |
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RST |
RST |
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A |
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in |
ext |
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CLK |
Gnd |
CLK |
B |
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ext |
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Data |
VCC |
Data |
C |
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in |
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ext |
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Figure 2. |
Configuration |
VCC |
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100 Ω |
RST in |
RST ext |
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R1 |
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47 Ω |
CLK in |
CLK ext |
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R2 |
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100 Ω |
Data in |
Data ext |
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R3 |
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Cline = 20pF max. |
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GND |
Description
The EMIF03-SIM02F2 is a highly integrated device designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interference.The EMIF03 Flip Chip packaging means the package size is equal to the die size.
This filter includes an ESD protection circuitry which prevents damage to the application when subjected to ESD surges up 15kV.
April 2008
TM: IPAD is a trademark of STMicroelectronics.
Rev 6 |
1/8 |
www.st.com
Characteristics |
EMIF03-SIM02F2 |
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Table 1. |
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Absolute maximum ratings (Tamb = 25 °C) |
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Symbol |
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Parameter and test conditions |
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Value |
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Unit |
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Internal pins (A3, B3, C3): |
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ESD discharge IEC61000-4-2, air discharge |
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2 |
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VPP |
ESD discharge IEC61000-4-2, contact discharge |
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2 |
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kV |
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External pins (A2, B1, C2, C1): |
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ESD discharge IEC61000-4-2, air discharge |
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15 |
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ESD discharge IEC61000-4-2, contact discharge |
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8 |
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Tj |
Maximum junction temperature |
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125 |
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°C |
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Top |
Operating temperature range |
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-40 to +85 |
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°C |
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Tstg |
Storage temperature range |
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-55 to 150 |
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°C |
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Table 2. |
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Electrical characteristics (Tamb = 25 °C) |
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Symbol |
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Parameters |
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I |
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VBR |
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Breakdown voltage |
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IRM |
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Leakage current @ VRM |
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IF |
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VRM |
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Stand-off voltage |
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VCL |
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Clamping voltage |
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VCL VBR VRM |
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VF |
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Rd |
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Dynamic impedance |
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V |
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IRM |
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IR |
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IPP |
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Peak pulse current |
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RI/O |
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Series resistance between Input & |
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IPP |
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Output |
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Cline |
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Input capacitance per line |
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Symbol |
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Test conditions |
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Min |
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Typ |
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Max |
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Unit |
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VBR |
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IR = 1 mA |
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6 |
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20 |
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V |
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IRM |
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VRM = 3V |
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0.2 |
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µA |
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Rd |
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1.5 |
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Ω |
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R1, R3 |
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Tolerance ± 20% |
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100 |
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Ω |
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R2 |
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Tolerance ± 20% |
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47 |
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Ω |
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Cline |
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@ 0V |
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20 |
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pF |
2/8
EMIF03-SIM02F2 |
Characteristics |
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Figure 3. S21 (dB) attenuation measurement Figure 4. |
S21 (dB) attenuation measurement |
(A2-A3 line) |
(B1-B3 line) |
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EMIF03-SIM02F2_FREQ-MEAS_PM428 |
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EMIF03-SIM02F2_FREQ-MEAS_PM428 |
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0.00 |
Aplac 7.70 User: ST Microelectronics Sep 22 2004 |
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0.00 |
Aplac 7.70 User: ST Microelectronics Sep 22 2004 |
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dB |
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dB |
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-10.00 |
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-10.00 |
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-20.00 |
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-20.00 |
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-30.00 |
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-30.00 |
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-40.00 |
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-40.00 |
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100.0k |
1.0M |
10.0M |
100.0M |
1.0G |
100.0k |
1.0M |
10.0M |
100.0M |
1.0G |
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A2/A3 Line |
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f/Hz |
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B1/B3 line |
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f/Hz |
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Figure 5. S21 (dB) attenuation measurement Figure 6. Analog crosstalk measurements (C1-C3 line)
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EMIF03-SIM02F2_FREQ-MEAS_PM428 |
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EMIF03-SIM02F2_FREQ-MEAS_PM428 |
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0.00 |
Aplac 7.70 User: ST Microelectronics Sep 22 2004 |
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0.00 |
Aplac 7.70 User: ST Microelectronics Sep 22 2004 |
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dB |
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dB |
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-10.00 |
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-20.00 |
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-10.00 |
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-30.00 |
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-40.00 |
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-20.00 |
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-50.00 |
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-60.00 |
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-70.00 |
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-30.00 |
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-80.00 |
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-90.00 |
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-40.00 |
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-100.00 |
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100.0k |
1.0M |
10.0M |
100.0M |
1.0G |
100.0k |
1.0M |
10.0M |
100.0M |
1.0G |
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C1/C3 line |
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f/Hz |
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Xtalk A2/B3 |
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f/Hz |
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Figure 7. Voltages when IEC61000-4-2 |
Figure 8. Voltages when IEC61000-4-2 (-15 kV |
(+15 kV air discharge) applied to |
air discharge) applied to external |
external pin |
pin |
Vexternal : 10V/d |
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Vexternal : 5V/d |
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Vinternal : 10V/d |
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Vinternal : 5V/d |
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100ns/d |
100ns/d |
3/8