ST EMIF03-SIM02F2 User Manual

EMIF03-SIM02F2

3-line IPAD™, EMI filter including ESD protection

Features

EMI symmetrical (I/O) low-pass filter

High efficiency in EMI filtering

Lead-free package

Very low PCB space consuming: 1.42 mm x 1.42 mm

Very thin package: 0.65 mm

High efficiency in ESD suppression

High reliability offered by monolithic integration

High reduction of parasitic elements through integration and wafer level packaging

Complies with the following standards

IEC 61000-4-2, Level 4 on external and Vcc pins:

15 kV (air discharge)

8 kV (contact discharge)

IEC 61000-4-2, Level 1 on internal pins:

2 kV (air discharge)

2 kV (contact discharge)

MIL STD 883E - Method 3015-6 Class 3

Applications

EMI filtering and ESD protection for:

SIM Interface (Subscriber Identify Module)

UIM Interface (Universal Identify Module)

Flip Chip (8 bumps)

Figure 1. Pin configuration (bump side)

3

2

1

 

RST

RST

 

A

in

ext

 

 

 

CLK

Gnd

CLK

B

in

ext

 

 

Data

VCC

Data

C

in

 

ext

 

Figure 2.

Configuration

VCC

 

 

100 Ω

RST in

RST ext

 

R1

 

47 Ω

CLK in

CLK ext

 

R2

 

100 Ω

Data in

Data ext

 

R3

 

Cline = 20pF max.

 

GND

Description

The EMIF03-SIM02F2 is a highly integrated device designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interference.The EMIF03 Flip Chip packaging means the package size is equal to the die size.

This filter includes an ESD protection circuitry which prevents damage to the application when subjected to ESD surges up 15kV.

April 2008

TM: IPAD is a trademark of STMicroelectronics.

Rev 6

1/8

www.st.com

Characteristics

EMIF03-SIM02F2

 

 

1 Characteristics

Table 1.

 

Absolute maximum ratings (Tamb = 25 °C)

 

 

 

 

 

 

 

 

Symbol

 

Parameter and test conditions

 

 

Value

 

 

 

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Internal pins (A3, B3, C3):

 

 

 

 

 

 

 

 

 

ESD discharge IEC61000-4-2, air discharge

 

2

 

 

 

 

 

VPP

ESD discharge IEC61000-4-2, contact discharge

 

2

 

 

 

 

kV

External pins (A2, B1, C2, C1):

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ESD discharge IEC61000-4-2, air discharge

 

15

 

 

 

 

 

 

ESD discharge IEC61000-4-2, contact discharge

 

8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Tj

Maximum junction temperature

 

125

 

 

 

 

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Top

Operating temperature range

 

-40 to +85

 

 

 

°C

Tstg

Storage temperature range

 

-55 to 150

 

 

 

°C

Table 2.

 

Electrical characteristics (Tamb = 25 °C)

 

 

 

 

 

 

 

 

Symbol

 

Parameters

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

 

 

 

VBR

 

Breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IRM

 

Leakage current @ VRM

 

 

 

 

IF

 

 

 

 

 

VRM

 

Stand-off voltage

 

 

 

 

 

 

 

 

 

 

 

VCL

 

Clamping voltage

 

VCL VBR VRM

 

VF

 

 

 

 

Rd

 

Dynamic impedance

 

 

 

 

 

V

 

 

 

 

 

 

IRM

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IR

 

 

 

 

IPP

 

Peak pulse current

 

 

 

 

 

 

 

 

 

 

 

RI/O

 

Series resistance between Input &

 

 

 

 

 

IPP

 

 

 

 

 

Output

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Cline

 

Input capacitance per line

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

 

Test conditions

 

Min

 

Typ

 

Max

 

 

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

VBR

 

IR = 1 mA

 

6

 

 

 

20

 

 

V

IRM

 

VRM = 3V

 

 

 

 

 

0.2

 

 

µA

Rd

 

 

 

 

 

 

1.5

 

 

 

 

Ω

R1, R3

 

Tolerance ± 20%

 

 

100

 

 

 

 

Ω

R2

 

Tolerance ± 20%

 

 

47

 

 

 

 

Ω

Cline

 

@ 0V

 

 

 

 

 

20

 

 

pF

2/8

ST EMIF03-SIM02F2 User Manual

EMIF03-SIM02F2

Characteristics

 

 

Figure 3. S21 (dB) attenuation measurement Figure 4.

S21 (dB) attenuation measurement

(A2-A3 line)

(B1-B3 line)

 

 

EMIF03-SIM02F2_FREQ-MEAS_PM428

 

 

 

EMIF03-SIM02F2_FREQ-MEAS_PM428

 

0.00

Aplac 7.70 User: ST Microelectronics Sep 22 2004

 

0.00

Aplac 7.70 User: ST Microelectronics Sep 22 2004

 

 

 

 

 

 

 

 

 

dB

 

 

 

 

dB

 

 

 

 

-10.00

 

 

 

 

-10.00

 

 

 

 

-20.00

 

 

 

 

-20.00

 

 

 

 

-30.00

 

 

 

 

-30.00

 

 

 

 

-40.00

 

 

 

 

-40.00

 

 

 

 

100.0k

1.0M

10.0M

100.0M

1.0G

100.0k

1.0M

10.0M

100.0M

1.0G

 

A2/A3 Line

 

f/Hz

 

 

B1/B3 line

 

f/Hz

 

 

 

 

 

 

 

 

 

Figure 5. S21 (dB) attenuation measurement Figure 6. Analog crosstalk measurements (C1-C3 line)

 

 

EMIF03-SIM02F2_FREQ-MEAS_PM428

 

 

 

EMIF03-SIM02F2_FREQ-MEAS_PM428

 

0.00

Aplac 7.70 User: ST Microelectronics Sep 22 2004

 

0.00

Aplac 7.70 User: ST Microelectronics Sep 22 2004

 

 

 

 

 

 

 

 

 

 

 

 

 

 

dB

 

 

 

 

dB

 

 

 

 

-10.00

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

-20.00

 

 

 

 

-10.00

 

 

 

 

 

 

 

 

 

 

 

 

 

 

-30.00

 

 

 

 

 

 

 

 

 

-40.00

 

 

 

 

-20.00

 

 

 

 

-50.00

 

 

 

 

 

 

 

 

 

-60.00

 

 

 

 

 

 

 

 

 

-70.00

 

 

 

 

-30.00

 

 

 

 

 

 

 

 

 

 

 

 

 

 

-80.00

 

 

 

 

 

 

 

 

 

-90.00

 

 

 

 

-40.00

 

 

 

 

-100.00

 

 

 

 

100.0k

1.0M

10.0M

100.0M

1.0G

100.0k

1.0M

10.0M

100.0M

1.0G

 

C1/C3 line

 

f/Hz

 

 

Xtalk A2/B3

 

f/Hz

 

 

 

 

 

 

 

 

 

Figure 7. Voltages when IEC61000-4-2

Figure 8. Voltages when IEC61000-4-2 (-15 kV

(+15 kV air discharge) applied to

air discharge) applied to external

external pin

pin

Vexternal : 10V/d

 

Vexternal : 5V/d

 

 

 

Vinternal : 10V/d

 

Vinternal : 5V/d

 

100ns/d

100ns/d

3/8

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