ST EMIF03-SIM02F2 User Manual

3-line IPAD™, EMI filter including ESD protection

Features

■ EMI symmetrical (I/O) low-pass filter

■ High efficiency in EMI filtering

■ Lead-free package

■ Very low PCB space consuming:

1.42 mm x 1.42 mm

■ Very thin package: 0.65 mm

■ High efficiency in ESD suppression

■ High reliability offered by monolithic integration

■ High reduction of parasitic elements through

integration and wafer level packaging

Complies with the following standards

■ IEC 61000-4-2, Level 4 on external and V

pins:
– 15 kV (air discharge)
– 8 kV (contact discharge)

■ IEC 61000-4-2, Level 1 on internal pins:

– 2 kV (air discharge)
– 2 kV (contact discharge)

■ MIL STD 883E - Method 3015-6 Class 3

Applications

EMI filtering and ESD protection for:

■ SIM Interface (Subscriber Identify Module)

■ UIM Interface (Universal Identify Module)

cc

EMIF03-SIM02F2

Flip Chip

(8 bumps)

Figure 1. Pin configuration (bump side)

123

RST

RST

ext

in

Gnd

V

CLK

Data

CC

CLK

in

Data

in

Figure 2. Configuration

V

CC

RST in RST ext

CLK in

Data in

100 Ω

R1

47 Ω

R2

100 Ω

R3

GND

A

B

ext

C

ext

Cline = 20pF max.

CLK ext

Data ext

Description

The EMIF03-SIM02F2 is a highly integrated
device designed to suppress EMI/RFI noise in all
systems subjected to electromagnetic
interference.The EMIF03 Flip Chip packaging
means the package size is equal to the die size.

This filter includes an ESD protection circuitry
which prevents damage to the application when
subjected to ESD surges up 15kV.

April 2008 Rev 6 1/8

TM: IPAD is a trademark of STMicroelectronics.

www.st.com

8

Characteristics EMIF03-SIM02F2

1 Characteristics

Table 1. Absolute maximum ratings (T

Symbol Parameter and test conditions Value Unit

Internal pins (A3, B3, C3):

ESD discharge IEC61000-4-2, air discharge

V

ESD discharge IEC61000-4-2, contact discharge

PP

External pins (A2, B1, C2, C1):

ESD discharge IEC61000-4-2, air discharge
ESD discharge IEC61000-4-2, contact discharge

amb

= 25 °C)

15

2
2

kV

8

T

T

T

Table 2. Electrical characteristics (T

Maximum junction temperature 125 °C

j

Operating temperature range -40 to +85 °C

op

Storage temperature range -55 to 150 °C

stg

= 25 °C)

amb

Symbol Parameters

V

BR

I

RM

V

RM

V

R

I

PP

R

C

line

Breakdown voltage

Leakage current @ V

Stand-off voltage

Clamping voltage

CL

Dynamic impedance

d

Peak pulse current

Series resistance between Input &

I/O

Output

Input capacitance per line

RM

V

V

CL

BR

I

I

F

V

V

RM

F

I

RM

I

R

I

PP

V

Symbol Test conditions Min Typ Max Unit

V

R

C

BR

I

RM

R

1, R3

R

line

IR = 1 mA 6 20 V

VRM = 3V 0.2 µA

d

1.5 Ω

Tolerance ± 20% 100 Ω

Tolerance ± 20% 47 Ω

2

@ 0V 20 pF

2/8

EMIF03-SIM02F2 Characteristics

Figure 3. S21 (dB) attenuation measurement

(A2-A3 line)

EMIF03-SIM02F2_FREQ-MEAS_PM428

0.00

dB

-10.00

-20.00

-30.00

-40.00

100.0k 1.0M 10.0M 100.0M 1.0G

Aplac 7.70 User: ST Microelectronics Sep 22 2004

A2/A3 Line

f/Hz

Figure 5. S21 (dB) attenuation measurement

(C1-C3 line)

EMIF03-SIM02F2_FREQ-MEAS_PM428

0.00

dB

-10.00

-20.00

-30.00

-40.00

100.0k 1.0M 10.0M 100.0M 1.0G

Aplac 7.70 User: ST Microelectronics Sep 22 2004

C1/C3 line

f/Hz

Figure 7. Voltages when IEC61000-4-2

(+15 kV air discharge) applied to
external pin

Figure 4. S21 (dB) attenuation measurement

(B1-B3 line)

EMIF03-SIM02F2_FREQ-MEAS_PM428

0.00

dB

-10.00

-20.00

-30.00

-40.00

100.0k 1.0M 10.0M 100.0M 1.0G

Aplac 7.70 User: ST Microelectronics Sep 22 2004

B1/B3 line

f/Hz

Figure 6. Analog crosstalk measurements

EMIF03-SIM02F2_FREQ-MEAS_PM428

0.00

dB

-10.00

-20.00

-30.00

-40.00

-50.00

-60.00

-70.00

-80.00

-90.00

-100.00

100.0k 1.0M 10.0M 100.0M 1.0G

Aplac 7.70 User: ST Microelectronics Sep 22 2004

Xtalk A2/B3

f/Hz

Figure 8. Voltages when IEC61000-4-2 (-15 kV

air discharge) applied to external
pin

Vexternal : 10V/d

Vinternal : 10V/d

100ns/d

Vexternal : 5V/d

Vinternal

: 5V/d

100ns/d

3/8