ST EMIF03-SIM02C2 User Manual
3-line IPAD™ EMI filter including ESD protection
Features
■ EMI symmetrical (I/O) low-pass filter
■ high efficiency in EMI filtering
■ lead-free coated package
■ very low PCB space occupation:
– 1.42 mm x 1.42 mm
■ very thin package: 0.65 mm
■ high efficiency in ESD suppression
■ high reliability offered by monolithic integration
■ high reduction of parasitic elements through
integration and wafer level packaging
Complies with following standards:
EMIF03-SIM02C2
Coated Flip-Chip package
(8 bumps)
■ IEC 61000-4-2 level 4 on external and V
CC
pins:
– 15 kV (air discharge)
– 8 kV (contact discharge)
■ MIL STD 883G - Method 3015-7 Class 3
Applications
Where EMI filtering in ESD sensitive equipment is
required:
■ SIM Interface (subscriber identify module)
■ UIM Interface (universal identify module)
Description
The EMIF03-SIM02C2 is a highly integrated
device designed to suppress EMI/RFI noise in all
systems subjected to electromagnetic
interference. The EMIF03 Flip-Chip packaging
means the package size is equal to the die size.
This filter includes an ESD protection circuitry
which protects the application from damage when
subjected to ESD surges up 15 kV.
TM: IPAD is a trademark of STMicroelectronics
Figure 1. Pin configuration (bump side)
123
RST
RST
in
CLK
in
Data
in
ext
Gnd
V
CC
CLK
ext
Data
ext
A
B
C
September 2010 Doc ID 13251 Rev 3 1/8
www.st.com
8
Characteristics EMIF03-SIM02C2
1 Characteristics
Figure 2. Basic cell configuration
V
CC
RST in RST ext
CLK in
Data in
Table 1. Absolute ratings (limiting values)
Symbol Parameter Value Unit
Internal pins (A3, B3, C3):
ESD discharge IEC61000-4-2, air discharge
V
PP
ESD discharge IEC61000-4-2, contact discharge
External pins (A2, B1, C2, C1):
ESD discharge IEC61000-4-2, air discharge
ESD discharge IEC61000-4-2, contact discharge
T
Maximum junction temperature 125 °C
j
100 Ω
R1
47 Ω
R2
100 Ω
R3
GND
CLK ext
Data ext
Cline = 20pF max.
2
2
15
8
kV
T
op
T
stg
Operating temperature range -40 to +85 °C
Storage temperature range -55 to +150 °C
Figure 3. Electrical characteristics (definitions)
Symbol Parameter
V = Breakdown voltage
BR
V = Clamping voltage
CL
I = Leakage current @ V
RM RM
V = Stand-off voltage
RM
I = Forward current
F
I = Peak pulse current
PP
I = Breakdown current
R
V = Forward voltage drop
F
I
I
F
V
V
V
V
CL
RM
BR
F
I
RM
I
R
I
PP
V
2/8 Doc ID 13251 Rev 3
EMIF03-SIM02C2 Characteristics
Table 2. Electrical characteristics, parameter values
Symbol Test conditions Min Typ Max Unit
V
BR
I
RM
R
d
R
, R
1
R
2
C
line
IR = 1 mA 6 20 V
VRM = 3 V 0.2 µA
Tolerance ± 20% 100
3
Tolerance ± 20% 47
VR = 0 V 20 pF
Figure 4. S21 (dB) attenuation measurement
(A2-A3 line)
EMIF03-SIM02C2_FREQ-MEAS_PM428
0.00
dB
-10.00
-20.00
-30.00
-40.00
100.0k 1.0M 10.0M 100.0M 1.0G
Aplac 7.70 User: ST Microelectronics Sep 22 2004
A2/A3 Line
f/Hz
Figure 6. S21 (dB) attenuation measurement
(C1-C3 line)
EMIF03-SIM02C2_FREQ-MEAS_PM428
0.00
dB
-10.00
-20.00
-30.00
-40.00
100.0k 1.0M 10.0M 100.0M 1.0G
Aplac 7.70 User: ST Microelectronics Sep 22 2004
C1/C3 line
f/Hz
1.5 Ω
Figure 5. S21 (dB) attenuation measurement
(B1-B3 line)
EMIF03-SIM02C2_FREQ-MEAS_PM428
0.00
dB
-10.00
-20.00
-30.00
-40.00
100.0k 1.0M 10.0M 100.0M 1.0G
Aplac 7.70 User: ST Microelectronics Sep 22 2004
B1/B3 line
f/Hz
Figure 7. Analog crosstalk measurements
EMIF03-SIM02C2_FREQ-MEAS_PM428
0.00
dB
-10.00
-20.00
-30.00
-40.00
-50.00
-60.00
-70.00
-80.00
-90.00
-100.00
100.0k 1.0M 10.0M 100.0M 1.0G
Aplac 7.70 User: ST Microelectronics Sep 22 2004
Xtalk A2/B3
f/Hz
Doc ID 13251 Rev 3 3/8
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