IPAD™
2 line EMF filter including ESD protection
Main application
When EMI filtering is ESD sensitive equipment is
required:
■ Mobile phones and communication systems
■ Computers, printers and MCU boards
Description
The EMIF02-USB05F2 is a highly integrated array
designed to suppress EMI / RFI noise for USB
port filtering. The EMIF02-USB05F2 Flip-Chip
packaging means the package size is equal to the
die size.
Additionally, this low-pass filter includes an ESD
protection circuitry to prevent damage to the
application when subjected to ESD surges up
to 15 kV.
This device is designed to be fully compatible with
USB standards.
EMIF02-USB05F2
Flip-Chip
(8 Bumps)
Pin configuration (bump side)
12
V
IO4
CC
A
O2 I2
O1 I1
IO3
GND
B
C
D
Benefits
■ 2 x EMI low-pass filter + 2 line ESD protection
■ 1.5 kΩ pull-up included
■ High efficiency in EMI filtering
■ Lead free package
■ Very low PCB space consumption:
1.92 mm x 0.92 mm
■ Very thin package: 0.65 mm
■ High reliability offered by monolithic integration
■ High reduction of parasitic elements through
integration and wafer level packaging
■ USB full speed (12 Mbps), OTG compliant
Complies with following standards:
IEC 61000-4-2
level 4
MIL STD 883G - Method 3015-7 Class 3
November 2006 Rev 2 1/7
15 kV (air discharge)
8 kV (contact discharge)
Functional diagram
IO4
IO3
Input 2
GND
Input 1
V
CC
R3
R1
Output2
R2
Output 1
Order code
Part Number Marking
EMIF02-USB05F2 GV
TM: IPAD is a trademark of STMicroelectronics
www.st.com
7
Characteristics EMIF02-USB05F2
1 Characteristics
Table 1. Absolute ratings (limiting values)
Symbol Parameter and test conditions Value Unit
Maximum junction temperature 125 ° C
T
j
T
T
Table 2. Electrical characteristics (Tamb = 25° C)
Operating temperature range - 40 to + 85 ° C
op
Storage temperature range - 55 to + 150 ° C
stg
Symbol Parameter
V
I
RM
V
C
Breakdown voltage
BR
Leakage current @ V
Stand-off voltage
RM
Input capacitance per line
line
RM
BR
I
I
R
I
RM
VRMV
I
RM
V
I
R
BRVRM
Symbol Test conditions Tolerance Min. Typ. Max. Unit
V
BR
I
RM
R
, R
1
2
R
3
C
line
IR = 1 mA 6 9 V
VRM = 5 V per line 1 µA
I = 10 mA ± 5% 33 Ω
I = 1 mA ± 5% 1.5 kΩ
@ 0 V 30 pF
Matching Serial resistance matching 1 %
V
2/7
EMIF02-USB05F2 Characteristics
Figure 1. S21 (dB) attenuation measurement Figure 2. Analog crosstalk measurements
dB
0.00
-10.00
-
-
-
-20.00
-
-
-
-30.00
-
-
-
-40.00
-
-
-
100.0k 1.0M 10.0M 100.0M 1.0G
F (Hz)
Figure 3. ESD response to IEC 61000-4-2
(+15 kV air discharge) on one input
(Vin) and on one output (Vout)
V(in)
5V/d
Figure 4. ESD response to IEC 61000-4-2
V(in)
5V/d
dB
0.00
-10.00
-
-20.00
-
-30.00
-
-40.00
-
-50.00
-
-60.00
-
-70.00
-80.00
-90.00
-100.00
-
100.0k 1.0M 10.0M 100.0M 1.0G
F (Hz)
(-15 kV air discharge) on one input
(Vin) and on one output (Vout)
V(out)
5V/d
100 ns/d
Figure 5. Junction capacitance versus
reverse voltage applied
C (pF)
LINE
35
Vosc=30mV
30
25
20
15
10
5
0
0123 45
V (V)
LINE
Vosc = 30 mV
F=1MHz
F = 1 MHz
Tamb = 25
Ta=25°C
V(out)
5V/d
100 ns/d
°C
3/7