ST EMIF02-USB04F3 User Manual

3-line IPAD™, EMI filter including ESD protection

Features

■ EMI symmetrical (I/O) low-pass filter

■ high efficiency in EMI/ESD protection

■ lead-free package

■ very thin package

■ high reliability offered by monolithic integration

■ high reduction of parasitic elements through

integration and wafer level packaging

Complies with the following standards

EMIF02-USB04F3

Lead-free Flip-Chip package

(9 bumps)

■ IEC 61000-4-2 level 4 (on external pins B1 and

C1): – ±15 kV (air discharge) – ±8 kV (contact discharge)

■ IEC 61000-4-2 level 1 (on internal pins):

– ±2 kV (air discharge) – ±2 kV (contact discharge)

Applications

Where EMI filtering in ESD sensitive equipment is required:

■ mobile phones and communication systems

■ computers, printers and MCU boards

Description

The EMIF02-USB04F3 chip is a highly integrated audio filter device designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interference.

This filter includes ESD protection circuitry, which prevents damage to the protected device when subjected to ESD surges up to 15 kV.

Figure 1. Pin configuration (bump side)

3 2 1

A

B

C

Figure 2. Configuration

A2

C2 B3

R4 R3

R5

C1

B1

A1

C = 20 pF max

line

R2

R1

C3

A3

B2

TM: IPAD is a trademark of STMicroelectronics.

October 2010 Doc ID 18144 Rev 1 1/7

www.st.com

7

Electrical characteristics EMIF02-USB04F3

1 Electrical characteristics

Table 1. Absolute maximum ratings (T

Symbol Parameter Value Unit

Internal pins (A2, A3, B2, B3, C2, C3):

ESD discharge IEC 61000-4-2, level 1, air discharge

V

PP

P

d

T

op

ESD discharge IEC 61000-4-2, level 1, contact discharge

External pins (A1, B1, C1):

ESD discharge IEC 61000-4-2, level 4, air discharge ESD discharge IEC 61000-4-2, level 4, contact discharge

Line resistance power dissipation at 70 °C 60 mW

Operating temperature range - 40 to + 85 °C

amb

= 25 °C)

±2 ±2

±15

±8

kV

T

Storage temperature range - 55 to 150 °C

stg

Figure 3. Electrical characteristics (definitions)

I

Symbol Parameter

V = Breakdown voltage

BR

I = Leakage current @ V

RM RM

C = Line capacitance

line

R Series resistance between Input and Output

Table 2. Electrical characteristics (T

=

I/O

amb

= 25 °C)

VBRV

Symbol Test conditions Min. Typ. Max. Unit

V

BRIR

I

RM

R

1, R2

R

4, R5

R

3

C

line

= 1 mA 7 V

VRM = 3 V per line 100 nA

Tolerance ± 5% 33 Ω

Tolerance ± 20% 18.5 kΩ

1425 1490 1560 Ω

V

line

= 0 V, V

= 30 mV, F = 1 MHz

osc

(measured under zero light conditions)

I

R

RM

I

RM

I

RM

I

RM

VRMV

I

R

V

BR

20 pF

2/7 Doc ID 18144 Rev 1

EMIF02-USB04F3 Electrical characteristics

Figure 4. S21 (dB) attenuation measurement

on C3-C1 and A3-B1

dB

0.00

- 10.00 D+

D -

- 20.00

- 30.00

- 40.00

- 50.00

- 60.00

F = 335 MHz

C

S21(dB)

F = 900 Mhz

-12.3

-12.0

F = 1.8 Ghz

-20.4

-19.5

f/Hz

D+

D-

1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G

V= 0V

BIAS

Figure 6. Digital crosstalk measurement on

C3-B1 in 50 environment

D-OUT

C2

C1

1 V/Div.

100 mV/Div.

D+IN

10 ns/Div.

Figure 5. Analog crosstalk measurements on

C3 - A1

XTalk

0.00

- 10.00

- 20.00

- 30.00

- 40.00

- 50.00

- 60.00

(dB)

V= 0V

BIAS

D+/D-

XTalk(dB)

300 kHz < F < 3 GHz

1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G

>-12

f/Hz

Figure 7. ESD response to IEC 61000-4-2

(+15 kV air discharge) on one input V

and on one output V

(in)

20 V/Div.

INPUT

C2

10 V/Div.

OUTPUT

C3

(out)

100 ns/Div

Figure 8. ESD response to IEC 61000-4-2

(-15 kV air discharge) on one input V

and on one output V

(in)

20 V/Div.

C2

10 V/Div.

C3

INPUT

OUTPUT

Figure 9. Line capacitance versus applied

voltage (typical values, line C1-B2)

(out)

C (pF)

18

16

14

12

100 ns/Div

Doc ID 18144 Rev 1 3/7

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V (V)

R