ST EMIF02-USB03F2 User Manual

2-line IPAD™, EMI filter including ESD protection

Features

■ 2-line, low-pass filter + 2-line ESD protection

■ High efficiency in EMI filtering

■ Lead-free package

■ Very low PCB space occupation: < 2.80 mm

■ Very thin package: 0.65 mm

■ High efficiency in ESD suppression

(IEC 61000-4-2 level 4)

■ High reliability offered by monolithic integration

■ High reduction of parasitic elements through

integration and wafer level packaging

Complies with the following standards

■ IEC 61000-4-2 level 4 on external pins:

– 15 kV (air discharge)
– 8 kV (contact discharge)

■ IEC 61000-4-2 level 1 on internal pins:

– 2 kV (air discharge)
– 2 kV (contact discharge)

Application

ESD protection and EMI filtering for:

■ USB OTG port

Description

The EMIF02-USB03F2 is a highly integrated array
designed to suppress EMI / RFI noise for USB
OTG (on-the-go) ports.

2

EMIF02-USB03F2

Flip Chip

(11 bumps)

Figure 1. Pin layout (bump side)

3

2

1

Dz

ID

Pup

Vbus

D+

Pd2

out

D-

GND

out

Figure 2. Schematic

EMIF02-USB03F2

D+OUT D+IN

D-OUT

Pd2

Pd1

Pup Dz ID Vbus

R3=1.3kΩ

R2=33Ω

R1=33Ω

R5=15kΩ R4=17kΩ

C

= 20 pF max.

LINE

Pd1

D+

in

D-

in

A

B

C

D

D-IN

The EMIF02-USB03F2 Flip-Chip packaging
means the package size is equal to the die size.

Additionally, this filter includes ESD protection
circuitry which prevents damage to the protected
device when subjected to ESD surges up to 15 kV
on external contacts.

TM: IPAD is a trademark of STMicroelectronics.

February 2010 Doc ID 10740 Rev 5 1/8

www.st.com

8

Characteristics EMIF02-USB03F2

1 Characteristics

Table 1. Absolute ratings (T

Symbol Parameter and test conditions Value Unit

Internal pins (D3, C3, C2, B2, B1):

ESD discharge IEC61000-4-2, air discharge

V

ESD discharge IEC61000-4-2, contact discharge

PP

External pins (D1, C1, A2, A3, B3):

ESD discharge IEC61000-4-2, air discharge
ESD discharge IEC61000-4-2, contact discharge

amb

= 25 °C)

15

2
2

kV

8

T

T

T

Table 2. Electrical characteristics (T

Maximum junction temperature 125 °C

j

Operating temperature range -40 to +85 °C

op

Storage temperature range -55 to 150 °C

stg

= 25 °C)

amb

Symbol Parameters

C

V

I

RM

V

V

R

I

PP

LINE

BR

RM

CL

Breakdown voltage

Leakage current @ V

RM

Stand-off voltage

Clamping voltage

Dynamic impedance

d

Peak pulse current

Input capacitance per line

Symbol Test conditions Min Typ Max Unit

C

V

I

RM

LINE

BR

IR = 1 mA 14 V

VRM = 3 V 0.2 µA

V

= 0 V, V

LINE

measured in zero light condition

= 30 mV, F = 1 MHz,

OSC

20 pF

, R

R

1

R

R

R

Tolerance ± 5 % 33 Ω

2

Tolerance ± 5 % 1.30 kΩ

3

Tolerance ± 5 % 17 kΩ

4

Tolerance ± 5 % 15 kΩ

5

2/8 Doc ID 10740 Rev 5

EMIF02-USB03F2 Characteristics

Figure 3. Filtering measurement Figure 4. Analog crosstalk measurement

dB

0

-1 0

-2 0

-3 0

F (Hz)

-4 0
100k 1M 10M 100M 1G

D+In D+Out

D-In D-Out

Figure 5. ESD response to IEC 61000-4-2

(+15 kV air discharge) on one input
V

and on one output V

in

20.0 V / Div.
VCL= 74 V

IN

10.0 V / Div.
VCL= 27 V

OUT

out

100 ns / Div.

100 ns / Div.

Figure 6. ESD response to IEC 61000-4-2

10.0 V / Div.

10.0 V / Div.

dB

0

-1 0

-2 0

-3 0

-4 0

-5 0

-6 0

-7 0

-8 0

-9 0

-100

-110

-120

-130
100k 1M 10M 100M 1G

D-In D+Out

F (Hz)

DZ ID

(-15 kV air discharge) on one input
V

and on one output V

in

IN

VCL= -47 V

OUT

VCL= -23 V

out

100 ns / Div.

100 ns / Div.

Figure 7. Junction capacitance versus reverse voltage applied (typical values)

C(pF)

20

18

16

14

12

10

8

6

4

2

0

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Doc ID 10740 Rev 5 3/8

V

LINE

(V)