ST EMIF02-USB01F2 User Manual
2-line IPAD™, EMI filter including ESD protection
Features
■ 2-line low-pass filter + ESD protection
■ High efficiency in EMI filtering
■ Lead-free package
■ Very low PCB space occupation: < 2.5 mm
Very thin package: 0.65 mm
■
■ High efficiency in ESD suppression
(IEC 61000-4-2 level 4)
■ High reliability offered by monolithic integration
■ High reduction of parasitic elements through
integration and wafer level packaging
Complies with the following standards
■ IEC 61000-4-2 level 4
– ±15 kV (air discharge)
– ±8 kV (contact discharge)
Application
2
EMIF02-USB01F2
Flip Chip
(8 bumps)
Figure 1. Pin configuration (bump side
view)
32 1
Pup
Vbus
A
DZ
D+
in
GND
Din
D+
out
Dout
B
C
D
E
■ ESD protection and EMI filtering for USB port
Description
The EMIF02-USB01F2 is a highly integrated array
Figure 2. Schematic
Vbus
DZ
D+ out
1.3K
R3
33
R1
designed to suppress EMI / RFI noise for USB
port filtering. The EMIF02-USB01F2 Flip-Chip
packaging means the package size is equal to the
die size.
Additionally, this filter includes ESD protection
GND
D- out D- in
33
R2
circuitry which prevents damage to the protected
device when subjected to ESD surges up to
15 kV.
TM: IPAD is a trademark of STMicroelectronics.
September 2009 Doc ID 10950 Rev 4 1/8
Pup
D+ in
www.st.com
8
Characteristics EMIF02-USB01F2
1 Characteristics
Table 1. Absolute ratings (T
Symbol Parameter Value Unit
amb
= 25 °C)
T
T
T
Junction temperature 125 °C
j
Operating temperature range -40 to +85 °C
op
Storage temperature range -55 to 150 °C
stg
Figure 3. Electrical characteristics - definitions
I
I
I
I
PP
PP
Symbol Parameter
V Stand-off voltage
RM
V Breakdown voltage
BR
I Leakage current @ V
RM RM
I
PP
C
Table 2. Electrical characteristics - values (T
P
eak pulse current
Input capacitance per line
line
VBRV
VBRV
amb
Symbol Test conditions Min. Typ. Max. Unit
V
BR
I
RM
C
line
, R
R
1
2
R
3
IR = 1 mA 6 - - V
VRM = 3 V - - 0.5 µA
@ 0 V - 40 45 pF
Tolerance ± 5 % - 33 - Ω
Tolerance ± 5 % - 1.30 - kΩ
I
I
R
R
I
I
RM
RM
RM
RM
= 25 °C)
V
V
I
I
VRMV
VRMV
RM
RM
I
I
R
R
I
I
PP
PP
BR
BR
2/8 Doc ID 10950 Rev 4
EMIF02-USB01F2 Characteristics
Figure 4. S21 (dB) attenuation measurement Figure 5. Analog crosstalk measurements
EMIF02-USB01: filtering response of lines C1/C3 and E1/E3
0.00
0.00
dB
-5.00
-10.00
-15.00
-20.00
-25.00
-30.00
-35.00
-40.00
-45.00
-50.00
1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G
E1_E3
Frequency/Hz
C1_C3
Figure 6. ESD response to IEC 61000-4-2
(+15 kV air discharge) on one input
(Vin) and one output (Vout)
0.00
dB
-10.00
-20.00
-30.00
-40.00
-50.00
-60.00
-70.00
-80.00
-90.00
-100.0
1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G
f/Hz
Figure 7. ESD response to IEC 61000-4-2
(-15 kV air discharge) on one input
(Vin) and on one output (Vout)
Vin: 10 V/d
Vin: 10 V/d
Vin: 5 V/d
50 ns/d
Figure 8. Capacitance versus reverse applied voltage (typical)
C(pF)
40
35
30
25
20
15
10
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VR(V)
Vin: 5 V/d
100 ns/d
Doc ID 10950 Rev 4 3/8
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