ST EMIF02-SPK03F2 User Manual
2-channel EMI filter and ESD protection for speaker phone
Features
■ 2-channel EMI symmetrical (I/O) low-pass filter
■ High efficiency in EMI filtering:
– S21 attenuation, -40 dB at 900 MHz
– Xtalk, in audio band, -60 dB
■ Very low PCB space consumption:
0.89 x 1.26 mm
■ Very thin package: 0.6 mm after reflow
■ High efficiency in ESD suppression on input
pins (IEC 61000-4-2 level 4)
■ High reliability offered by monolithic integration
■ High reduction of parasitic elements through
integration and wafer level packaging
■ Packaged in lead-free Flip Chip
Complies with the following standards
■ IEC 61000-4-2 level 4:
– ±15 kV (air discharge)
– ±8 kV (contact discharge)
EMIF02-SPK03F2
Datasheet − production data
Flip Chip
(5 bumps)
Figure 1. Pin configuration (bump side)
1
2
3
O1
O2
Figure 2. Functional schematic
GND
I1
A
B
I2
C
Application
■ Mobile phones
■ Portable devices
■ Connectivity devices
Description
The EMIF02-SPK03F2 chip is a highly integrated
I1 O1
I2 O2
L
C
C
C
L
C
device designed to suppress EMI/RFI noise for
interface line filtering.
The EMIF02-SPK03F2 is 2-channel, ultra
compact, high attenuation filter available in
0.5 mm pitch WLCSP package. Additionally, this
filter includes ESD protection circuitry, which
prevents damage to the protected device when
subjected to ESD surges up 30 kV.
June 2012 Doc ID 023219 Rev 1 1/10
This is information on a product in full production.
www.st.com
10
Characteristics EMIF02-SPK03F2
1 Characteristics
Table 1. Absolute maximum ratings (T
Symbol Parameter Value Unit
ESD discharge IEC 61000-4-2
V
PP
Air discharge
(1)
Contact discharge
I
SPK
T
j
T
op
T
stg
1. Measurements done on IEC 61000-4-2 test bench. For further details see Application note AN3353,
“IEC 61000-4-2 standard testing”.
Maximum rms currrent per channel 800 mA
Maximum junction temperature 125 °C
Operating temperature range -30 to 85 °C
Storage temperature range -55 to + 150 °C
Figure 3. Electrical characteristics - definitions
amb
= 25 °C)
30 kV
Symbol Parameter
V = Breakdown voltage
BR
V = Clamping voltage
CL
I = Leakage current @ V
RM RM
V = Stand-off voltage
RM
I = Peak pulse current
PP
I = Breakdown current
R
R
Table 2. Electrical characteristics - values (Tamb = 25 °C)
= Dynamic resistance
d
V
CL
Slope: 1/R
I
PP
Slope: 1/R
d
I
PP
d
Symbol Test conditions Min. Typ. Max. Unit
R
V
BR
R
I
RM
DC_L
C
line
d
IR = 1 mA 6 V
tp = 100 ns 0.2 Ω
VRM = 3 V per line 0.3 µA
DC resistance of the inductor 0.07 0.1 Ω
Vline = 0 V, V
= 30 mV, F = 1 MHz 250 pF
OSC
V
CL
2/10 Doc ID 023219 Rev 1
EMIF02-SPK03F2 Characteristics
Figure 4. Insertion losses versus frequency
APLAC 8.21 User: F:Cust# 8463:STMicroelectronics - Tours:AWR Corporation:RP=111
0
S21
-10
dB
-20
-30
-40
-50
-60
300k 1M 3M 10M 30M 100M 300M 1G 3G
I1-O1
EMIF02-SPK03F2
F/Hz
I2-O2
Figure 5. Analog crosstalk versus frequency
APLAC 8.21 User: F:Cust# 8463:STMicroelectronics - Tours:AWR Corporation:RP=111
0
XTalk
-10
dB
-20
-30
-40
-50
-60
-70
300k 1M 3M 10M 30M 100M 300M 1G 3G
I1-O2
EMIF02-SPK03F2
F/Hz
Doc ID 023219 Rev 1 3/10
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