ST EMIF02-MIC03M6 User Manual

2-line IPAD™, EMI filter and ESD protection for microphone
Features
EMI symmetrical (I/O) low-pass filter
High efficiency in EMI filtering
Very low PCB space consumption:
Very thin package: 0.6 mm max
High efficiency in ESD suppression
High reliability offered by monolithic integration
High reduction of parasitic elements through
integration and wafer level packaging
Lead-free and halogen-free package
Complies with following standards
IEC 61000-4-2 level 4, input and output pins
IEC 61000-4-2 level 4 requirements
– 8 kV (contact discharge)
or
– 15 kV (air discharge)
EMIF02-MIC03M6
Pin 1
Micro QFN 6 leads
1.45 mm x 1.00 mm (bottom view)

Figure 1. Pin configuration (top view)

MIC
GND GND
MIC
R in
L in
1
2
3
MIC
6
R out
5
MIC
4
L out
Application
Mobile phones
Description
The EMIF02-MIC03M6 is a 2-line highly integrated device designed to suppress EMI/RFI noise in all systems exposed to electromagnetic interference.
This filter includes ESD protection circuitry, which prevents damage to the application when subjected to ESD surges up to 8 kV on all pins.
May 2011 Doc ID 14448 Rev 2 1/11

Figure 2. Basic cell configuration

Low-pass filter
Input
GND GND GND
R = 68 , C
TM: IPAD is a trademark of STMicroelectronics
line
= 45 pF typ.Ω
Output
www.st.com
11
Characteristics EMIF02-MIC03M6

1 Characteristics

Table 1. Absolute ratings

(1)
Symbol Parameter Value Unit
V
T
T
1. limiting values at T
2. According to IEC61000-4-2 test conditions with ungrounded table top equipment set-up, PCB board on insulated plane (dimensions 25 x 25 mm
Table 2. Electrical characteristics (T
ESD discharge IEC61000-4-2 contact discharge
PP
ESD discharge IEC61000-4-2 air discharge
T
Junction temperature 125 °C
j
Operating temperature range -40 to + 85 °C
op
Storage temperature range -55 to +150 °C
stg
= 25 °C unless otherwise specified
amb
2
), 2 serial resistors of 470 kΩ to GND reference plane
amb
(2)
= 25 °C)
8
15
Symbol Parameter
I
I
PP
I
R
I
RM
VRMV
I
RM
I
R
I
PP
VBRV
RM
V
V
CL
BR
RM
RM
CL
PP
I/O
line
Breakdown voltage
Leakage current @ V
RM
Stand-off voltage
Clamping voltage
Dynamic resistance
d
Peak pulse current
Series resistance between Input & Output
Input capacitance per line
V
CL
BR
V
I
V
V
R
I
R
C
Symbol Test conditions Min. Typ. Max. Unit
BR
RM
I/O
IR = 1 mA 6 8 V
VRM = 3 V per line 500 nA
Tolerance ± 20% 68 Ω
(1)
VR = 0 V, F = 1 MHz, V
= 30 mV 45 pF
OSC
V
I
R
C
line
1. Tolerance ± 20%
kV
2/11 Doc ID 14448 Rev 2
EMIF02-MIC03M6 Characteristics
Figure 3. S21 attenuation measurement Figure 4. Analog cross talk measurements
(MIC R / MIC L)
dB
0.00
-5.00
-10.00
-15.00
-20.00
-25.00
-30.00
-35.00
-40.00
300.0k 1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G
F (Hz)
Figure 5. ESD response to IEC 61000-4-2
(+8 kV contact discharge) on MIC lines
Input
vi = 20 V/d
Figure 6. ESD response to IEC 61000-4-2
dB
0.00
0.00
-10.00
-10.00
-20.00
-20.00
-30.00
-30.00
-40.00
-40.00
-50.00
-50.00
-60.00
-60.00
-70.00
-70.00
-80.00
-80.00
300.0k 1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G
300.0k 1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G Xtalk
L
R-L Xtalk L-R
F (Hz)
(-8 kV contact discharge) on MIC lines
Input
vi = 20 V/d
Output
vo = 10 V/d
20 ns/d
vo = 10 V/d
Output
20 ns/d
Doc ID 14448 Rev 2 3/11
Ordering information scheme EMIF02-MIC03M6

2 Ordering information scheme

Figure 7. Ordering information scheme

EMIF yy - xxx zz Mx
EMI Filter
Number of lines
Information
xxx = application zz = version
Package
Mx = Micro QFN x leads
4/11 Doc ID 14448 Rev 2
Loading...
+ 7 hidden pages