ST EMIF02-MIC03F2 User Manual

®

MAIN PRODUCT CHARACTERISTICS:

Where EMI filtering in ESD sensitive equipment is
required :

■ Mobile phones and communication systems

■ Computers, printers and MCU Boards

DESCRIPTION

The EMIF02-MIC03 is a highly integrated device
designed to suppress EMI/RFI noise in all systems
subjected to electromagnetic interferences. The
EMIF02 Flip-Chip packaging means the package
size is equal to the die size.
This filter includes an ESD protection circuitry
which prevents damage to the application when
subjected to ESD surges up 15 kV.

BENEFITS

■ EMI symmetrical (I/O) low-pass filter

■ High efficiency in EMI filtering

■ Very low PCB space consuming:

1.07 mm x 1.47 mm

■ Very thin package: 0.65 mm

■ High efficiency in ESD suppression

■ High reliability offered by monolithic integration

■ High reducing of parasitic elements through

integration & wafer level packaging

EMIF02-MIC03F2

2 LINE EMI FILTER

AND ESD PROTECTIONIPAD™

Flip-Chip package

PIN CONFIGURATION (bump side)

132

I1

I2

A

COMPLIES WITH THE FOLLOWING STANDARDS:
IEC 61000-4-2

Level 4 on input pins 15 kV (air discharge)

8 kV (contact discharge)

Level 1 on output pins 2 kV (air discharge)

2 kV (contact discharge)

MIL STD 883E - Method 3015-6 Class 3

BASIC CELL CONFIGURATION

Low-pass Filter

Input

GND GND GND

TM: IPAD is a trademark of STMicroelectronics.

October 2004

REV. 1

GND

O2

Output

B

O1

C

Ri/o = 68

Ω

Cline = 100 pF

1/6

EMIF02-MIC03F2

ABSOLUTE RATINGS (limiting values)

Symbol Parameter and test conditions Value Unit

T

T

op

T

stg

Maximum junction temperature

j

Operating temperature range - 40 to + 85

Storage temperature range - 55 to 150

125 °C

°C

°C

ELECTRICAL CHARACTERISTICS (T

Symbol Parameter

V

I

RM

V

V

R

I

R

C

Breakdown voltage

BR

Leakage current @ VRM

Stand-off voltage

RM

Clamping voltage

CL

Dynamic impedance

d

Peak pulse current

PP

Series resistance between Input & Output

I/O

Input capacitance per line

line

= 25 °C)

amb

I

I

PP

I

R

I

V

CL

BR

RM

VRMV

I

RM

I

R

I

PP

VBRV

RM

V

V

CL

Symbol Test conditions Min. Typ. Max. Unit

V

BR

I

RM

R

I/O

C

line

Fig. 1: S21 (dB) attenuation measurements and

IR = 1 mA 6 8 V

VRM = 3 V per line

500 nA

Tolerance ± 20 % 68 Ω

VR = 0 V

100 pF

Fig. 2: Analog crosstalk measurements.

Aplac simulation.

2/6

0.00

0.00
dB

dB

-5.00

-5.00

-10.00

-10.00

-15.00

-15.00

-20.00

-20.00

-25.00

-25.00

-30.00

-30.00

-35.00

-35.00

-40.00

-40.00

-45.00

-45.00

-50.00

-50.00

100.0k 1.0M 10.0M 100.0M 1.0G

100.0k 1.0M 10.0M 100.0M 1.0G
f/Hz

f/Hz

0.00

0.00
dB

dB

-10.00

-10.00

-20.00

-20.00

-30.00

-30.00

-40.00

-40.00

-50.00

-50.00

-60.00

-60.00

-70.00

-70.00

-80.00

-80.00

100.0k 1.0M 10.0M 100.0M 1.0G

100.0k 1.0M 10.0M 100.0M 1.0G

f/Hz

f/Hz

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