ST EMIF02-MIC02F3 User Manual

2-line IPAD™, EMI filter including ESD protection

Features

■ EMI symmetrical (I/O) low-pass filter

■ High efficiency EMI filtering

■ Lead-free package

■ Very low PCB space consumption: 0.9 mm

Very thin package: 0.60 mm

■

■ High efficiency ESD suppression

■ High reliability offered by monolithic integration

■ High reduction of parasitic elements through

integration and wafer level packaging

2

EMIF02-MIC02F3

Flip Chip

(6 bumps)

Figure 1. Pin layout (bump side)

Complies with the following standards

■ IEC61000-4-2 level 4 on external pins:

– 15 kV (air discharge)
– 8 kV (contact discharge)

■ IEC61000-4-2 level 1 on internal pins:

– 2 kV (air discharge)
– 2 kV (contact discharge)

Applications

Where EMI filtering in ESD sensitive equipment is
required:

■ Mobile phones and communication systems

■ Computers, printers and MCU Boards

Description

The EMIF02-MIC02F3 is a highly integrated
device designed to suppress EMI/RFI noise in all
systems subjected to electromagnetic
interference.

This filter includes ESD protection circuitry, which
prevents damage to the protected device when
subjected to ESD surges up 15 kV.

123

E2

GND

GND

I2

E1

A

B

I1

Figure 2. Basic cell configuration

Low-pass Filter

I1
I2

GND GND GND

E1
E2

R

= 470

Ω

i/o

C

= 16 pF

line

TM: IPAD is a trademark of STMicroelectronics.

April 2008 Rev 2 1/8

www.st.com

Characteristics EMIF02-MIC02F3

1 Characteristics

Table 1. Absolute ratings (limiting values)

Symbol Parameter Value Unit

External pins (A1, A3):

ESD discharge IEC61000-4-2, air discharge

V

PP

ESD discharge IEC61000-4-2, contact discharge

Internal pins (B1, B3):

ESD discharge IEC61000-4-2, air discharge
ESD discharge IEC61000-4-2, contact discharge

T

T

op

T

stg

Table 2. Electrical characteristics (T

Junction temperature 125 °C

j

Operating temperature range -40 to + 85 °C

Storage temperature range -55 to 150 °C

Symbol Parameters

V

BR

I

RM

V

RM

V

CL

R

I

PP

R

C

line

Breakdown voltage

Leakage current @ V

RM

Stand-off voltage

Clamping voltage

Dynamic impedance

d

Peak pulse current

Series resistance between Input & Output

I/O

Input capacitance per line

amb

= 25 °C)

VCL

VRMVBR

I

IR
IRM

15

8

kV

2
2

I

PP

IRM
IR

IPP

VBRVRM

VCL

V

Symbol Test conditions Min Typ Max Unit

V

BR

I

RM

R

I/O

C

line

IR = 1 mA 14 16 V

VRM = 12 V per line 200 nA

Tolerance ± 10 % 470 Ω

V

= 0V, V

line

= 30 mV, F = 1 MHz,

OSC

(measured under zero light conditions)

2/8

16 20 pF

EMIF02-MIC02F3 Characteristics

dB

(Line 1)

Line 1

f (Hz)

Figure 4. S21 (dB) attenuation measurement

(Line 2)

dB

0.00

-10.00

-20.00

-30.00

-40.00

-50.00

-60.00

100.0k 1.0M 10.0M 100.0M 1.0G

Line 2

f (Hz)

Figure 3. S21 (dB) attenuation measurement

0.00

-10.00

-20.00

-30.00

-40.00

-50.00

-60.00

100.0k 1.0M 10.0M 100.0M 1.0G

Figure 5. Analog crosstalk measurement Figure 6. Digital crosstalk measurement

dB

0.00

-10.00

-20.00

-30.00

-40.00

-50.00

-60.00

-70.00

-80.00

-90.00

-100.00

100.0k 1.0M 10.0M 100.0M 1.0G

Xtalk 1/2

f (Hz)

Output Line 2

10mV/d

Input Line 1

1V/d

10ns/d
5Gs/s

Figure 7. ESD response to IEC 61000-4-2

(+15 kV air discharge) on one input
and on one output

Input

20V/d

Output

10V/d

100ns/d

Figure 8. ESD response to IEC 61000-4-2

(-15 kV air discharge) on one input
and on one output

Input

20V/d

Output

10V/d

100ns/d

3/8