ST EMIF01-TV01F3 User Manual

Single line IPAD™, EMI filter and ESD protection

Features

■ EMI symmetrical (I/O) low-pass filter

■ High efficiency EMI filtering

■ Lead-free package

■ 400 µm pitch

■ Very low PCB space occupation: 0.6 mm

Very thin package: 0.6 mm

■

■ High reliability offered by monolithic integration

■ Reduction of parasitic elements through CSP

integration

Complies with the following standards

■ IEC 61000-4-2 level 4 on internal and external

pins:
– 15 kV (air discharge)
– 8 kV (contact discharge)

■ MIL STD 883F - Method 3015.7 Class 3

2

EMIF01-TV01F3

Flip Chip

(4 bumps)

Figure 1. Pin configuration (bump side)

A

B

1

2

Pin Description Pin Description

A1 TV OUT internal B1 TV OUT external
A2 GND B2 GND

Application

■ TV analog signal in TV_OUT interface

Description

The EMIF01-TV01F3 is a highly integrated array
designed to suppress EMI/RFI noise and provide
impedance matching for mobile phone and
portable applications. The EMIF01-TV01F3 is in a
Flip Chip package to offer space saving and high
RF performance.

This low pass filter includes ESD protection
circuitry which prevents damage to the protected
device when subjected to ESD surges up to
15 kV.

May 2011 Doc ID 12078 Rev 3 1/8

Figure 2. Device configuration

TV out
Internal

GND GND

GND GND

TM: IPAD is a trademark of STMicroelectronics.

R

R

TV out
External

B1A1

www.st.com

8

Characteristics EMIF01-TV01F3

1 Characteristics

Table 1. Absolute maximum ratings

Symbol Parameter and test conditions Value Unit

Internal pins (A1) and external pin (B1):

V

ESD discharge IEC 61000-4-2, air discharge

PP

ESD discharge IEC 61000-4-2, contact discharge

Maximum junction temperature 125 °C

T

j

T

Operating temperature range -30 to +85 °C

op

15

8

P Maximum power dissipation 80 °C

kV

T

Table 2. Electrical characteristics (T

Storage temperature range -55 to 150 °C

stg

= 25 °C)

amb

Symbol Parameters

V

V

V

R

C

Breakdown voltage

BR

I

Leakage current @ V

RM

Stand-off voltage

RM

Clamping voltage

CL

R

Dynamic impedance

d

Peak pulse current

I

PP

Series resistance between Input & Output

I/O

Input capacitance per line

line

RM

Symbol Test conditions Min Typ Max Unit

V

BRIR

I

RM

= 1 mA 6 8 V

VRM = 3 V 0.2 µA

R Tolerance ± 5 % 75 Ω

C

@ 0 V 30 35 pF

line

2/8 Doc ID 12078 Rev 3

EMIF01-TV01F3 Characteristics

Figure 3. S21 (db) attenuation measurement Figure 4. ESD response to IEC61000-4-2

(+15 kV air discharge)

db

0.00

-10.00

-20.00

-30.00

-40.00

f (Hz)

-50.00

100.0k 1.0M 10.0M 100.0M 1.0G

Figure 5. ESD response to IEC61000-4-2

(-15 kV air discharge)

TV out
internal

10 V/d

TV out
external

100 ns/d

10 V/d

Figure 6. Line capacitance versus applied

voltage

C (pF)

LINE

35

30

25

20

15

10

5

0

0123456

V

(V)

LINE

TV out
internal

10 V/d

TV out
external

10 V/d

100 ns/d

F=1MHz

V

=30mV

osc

Tj=25°C

RMS

Doc ID 12078 Rev 3 3/8