查询DB-960-90W 供应商
90W / 26V / 925-960 MHz PA using 2x PD57060S
DB-960-90W
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
= 90 W min. with 13 dB gain over
OUT
925-960 MHz
• 10:1 LOAD VSWR CAPABILITY
• BeO FREE AMPLIFI E R.
DESCRIPTION
The DB-960-90W is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
amplifier designed for GSM/GPRS/EDGE base
station applications.
The DB-960-90W is desig ned in coope ration with
Europeenne de Telecomunications S.A. (www.etsa.rf), for high gain and broadband performance
operating in common source mode at 26 V, capable of withstanding l oad mismatch up to 10:1 all
phases and with harmonics lower than 30 dBc.
The
LdmosST
PRELIMINARY DATA
ORDER CODE
DB-960-90W
FAMILY
MECHANICAL SPECIFICATION
L=80 mm W=50 mm H=10 mm
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
DD
I
D
P
DISS
T
CASE
P
amb
November, 20 2002
Supply voltage 32 V
Drain Current 12
Power Diss. at Tcase = +85°C 145 W
Operating Case Temperature -20 to +85
Max. Ambient Temperature +55
CASE
= 25oC)
A
o
C
o
C
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DB-960-90W
ELECTRICAL SPECIFICATION (T
= +25oC, Vdd = 26V, Idq = 2 x 200 mA)
amb
Symbol Test Conditions Min. Typ. Max. Unit
FREQ. Frequency Range 925 960 MHz
P
Gain
P
1dB
Flatness
Flatness
ND at P
IRTL
Harmonic
VSWR
Spurious
IMD
1dB
3
OUT
= 90 W
12 13 dB
Over frequency range: 925 - 960 MHz 90 100 W
Over frequency range and @ P
P
from 0.1W to 90 W
OUT
P
1dB
Input return Loss P
P
= 90 W
OUT
from 0.1W to 90 W
OUT
Load Mismatch all phases @ P
10:1 VSWR all phases and P
P
= 90 WPEP
OUT
= 90 W
OUT
= 90 W
OUT
from 0.1 to 90 W
OUT
+/- 0.5 dB
1dB
40 45 %
-20 -15 dB
-30 dBc
10:1
-76 dBc
-25 dBc
TYPICAL PERFORMANCE
Output Power vs. Input Power
Pout (W)
120
100
80
60
40
940 MHz
960 MHz
925 MHz
Power Gain vs. Frequency (Pout = 90W)
Gp (dB)
15
14
13
12
20
0
02468
Pin (W)
Vdd = 26 V
Idq = 2 x 200 mA
Output Power and Efficiency vs. Frequency
P1dB (W)
120
F (MHz)
P1dB
Eff.
Vdd = 26 V
Idq = 2 x 200 mA
100
80
60
40
20
910 920 930 940 950 960 970
Nd (%)
80
70
60
50
40
30
11
Vdd = 26 V
Idq = 2 x 200 mA
10
910 920 930 940 950 960 970
F (MHz)
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TEST FIXTU R E CO M PONENT LAY O UT
CV1
CV2
DB-960-90W
TEST CIRCUIT PHOTOMASTER
Ref. ETSA c07/2000 - Ed1
Ref. ETSA c07/2000 - Ed1
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DB-960-90W
TEST CIRCUIT COMPONENT PART LIST
COMPONENT DESCRIPTION
T1, T2 PD57060S TRANSISTOR
C1, C2, C23, C24 47pF - 500V CERAMIC CHIP CAPACITOR
C3, C4 3.3pF - 500V CERAMIC CHIP CAPACITOR
C5, C6, C17, C18 100pF - 500V CERAMIC CHIP CAPACITOR
C7, C8, C9, C10, C11, C13 10pF - 500V CERAMIC CHIP CAPACITOR
C12, C14 6.8pF - 500V CERAMIC CHIP CAPACITOR
C15, C16 100nF - 63V CERAMIC CHIP CAPACITOR
C19, C20 1µF / 35V ELECTROLYTIC CAPACITOR
C21, C22, C26, C27 3.3pF - 500V CERAMIC CHIP CAPACITOR
C25 0.5pF - 500V CERAMIC CHIP CAPACITOR
CV1, CV2 ADJUSTABLE CAPACITOR 0.6 - 4.5pF / 500V
P1, P2 10K Ohms MULTITURN POTENTIOMETER
R1,R7 100 Ohms 1/4W 1206 SMD CHIP RESISTOR
R2 50 Ohms 30W - 4GHz LOAD
R3, R4 4.7K Ohms 1/4W 1206 SMD CHIP RESISTOR
R5, R6 10K Ohms 1/4W 1206 SMD CHIP RESISTOR
D1, D2 ZENER DIODE 5V - 500 mW SOD80
SM1, SM2 90° SMD HYBRID COUPLER ANAREN Xinger 1304-3
BOARD METCLAD MX3-30-C1/10C THK 0.762 mm Cu 35µ
SUBSTRATE TEFLON-GLASS Er = 2.55
BACK SIDE COPPER FLANGE 2 mm THICKNESS
CERAMIC CHIP CAPACITORS ATC100B or EQUIVALENT
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DB-960-90W
Information furnished is believed to be ac curate and reli able. Howev er, STMicroel ectronics assumes no responsibilit y for the cons equences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or patent rights of STMi croelectr onics. Specifications mentioned in thi s publicati on are s ubject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as cri tical comp onents in life support dev i ces or systems wi t hout express written ap proval of STMi croelect ronics.
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