ST DB-960-70W User Manual
查询DB-960-70W 供应商
70W / 26V / 925-960 MHz PA using 2x PD57045S
DB-960-70W
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
= 70 W min. with 13 dB gain over 925-960
OUT
MHz
• 10:1 LOAD VSWR CAPABILITY
• BeO FREE AMPLIFI E R.
DESCRIPTION
The DB-960-70W is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
amplifier designed for GSM & E-GSM base station
applications.
The DB-960-70W is desig ned in coope ration with
Européenne de Télécommunications S.A
(www.etsa.fr), for high gain and broadband
performance operating in common source mode
at 26 V, capable of withstanding load mismatch up
to 10:1 all phases and with harmo nics lower t han
30 dBc.
The
MECHANICAL SPECIFICATION
L=80 mm W=50 mm H=10 mm
LdmosST
ORDER CODE
DB-960-70W
FAMILY
PRELIMINARY DATA
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
DD
I
D
P
DISS
T
CASE
P
amb
November, 20 2002
Supply voltage 32 V
Drain Current 9 A
Power Dissipation 135 W
Operating Case Temperature -20 to +85
Max. Ambient Temperature +55
CASE
= 25oC)
o
C
o
C
1/5
DB-960-70W
0
)
ELECTRICAL SPECIFICATION (T
= +25oC, Vdd = 26V, Idq = 2 x 200mA)
amb
Symbol Test Conditions Min. Typ. Max. Unit
FREQ. Frequency Range 925 960 MHz
P
Gain
P
1dB
Flatness
Flatness
ND at P
IRTL
Harmonic
VSWR
Spurious
IMD
1dB
3
OUT
= 75 W
12.5 13 dB
Over frequency range: 925 - 960 MHz 70 75 W
Over frequency range and @ P
P
from 0.1W to 75W
OUT
P
1dB
Input return Loss P
P
= 75 W
OUT
from 0.1W to 75W
OUT
Load Mismatch all phases @ P
10:1 VSWR all phases and P
P
= 75 WPEP
OUT
= 75 W
OUT
= 75 W
OUT
from 0.1 to 75W
OUT
+/- 0.5 dB
1dB
45 50 %
-20 -15 dB
-40 -30 dBc
10:1
-76 dBc
-25 dB c
TYPICAL PERFORMANCE
Output Power versus Input Power Power Gain versus Frequency (Pout = 75W)
Pout (W)
120
100
80
60
40
960 MHz
940 MHz
920 MHz
Gp (dB)
15
14
13
12
20
0
02468
Pin (W)
Vdd = 26 V
Idq = 2 x 200 mA
P1dB and Efficiency versus Frequency
P1dB (W)
120
100
P1dB
80
Eff.
60
40
Vdd = 26 V
Idq = 2 x 200 mA
20
910 920 930 940 950 960 970
F (MHz)
2/5
Nd (%
11
Vdd = 26 V
Idq = 2 x 200 m A
10
910 920 930 940 950 960 97
F (MHz)
80
70
60
50
40
30
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