查询DB-960-60W 供应商
60W / 26V / 925-960 MHz PA using 1x PD57070S
DB-960-60W
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
= 60 W min. with 13 dB gain over
OUT
925 - 960 MHz
• 10:1 LOAD VSWR CAPABILITY
• BeO FREE AMPLIFI E R.
DESCRIPTION
The DB-960-60W is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
amplifier designed for GSM / GPRS / E DGE bas e
station applications.
The DB-960-60W is desig ned in coope ration with
Européenne de Télécommunications S.A
(www.etsa.fr), for high gain and broadband
performance operating in common source mode
at 26 V, capable of withstanding load mismatch up
to 10:1 all phases and with harmo nics lower t han
30 dBc.
The
MECHANICAL SPECIFICATION
L=60 mm W=30 mm H=10 mm
LdmosST
ORDER CODE
DB-960-60W
FAMILY
PRELIMINARY DATA
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
DD
I
D
P
DISS
T
CASE
P
amb
November, 20 2002
Supply voltage 32 V
Drain Current 8 A
Power Dissipation 95 W
Operating Case Temperature -20 to +85
Max. Ambient Temperature +55
CASE
= 25 °C)
o
C
o
C
1/4
DB-960-60W
ELECTRICAL SPECIFICATION (T
= +25 oC, Vdd = 26 V, Idq = 200 mA)
amb
Symbol Test Conditions Min. Typ. Max. Unit
FREQ. Frequency Range 925 960 MHz
P
Gain
P
1dB
Flatness
Flatness
ND at P
IRTL
Harmonic
VSWR
Spurious
IMD
1dB
3
OUT
= 60 W
13 14 dB
Over frequency range: 925 - 960 MHz 60 65 W
Over frequency range and @ P
P
from 0.1 W to 60 W
OUT
P
1dB
Input return Loss P
P
= 60 W
OUT
from 0.1 W to 60 W
OUT
Load Mismatch all phases @ P
10:1 VSWR all phases and P
P
= 60 WPEP
OUT
= 60 W
OUT
= 60 W
OUT
from 0.1 to 60 W
OUT
+/- 0.5 dB
1dB
45 52 %
-15 -10 dB
-30 dBc
10:1
-76 dBc
-25 dBc
TYPICAL PERFORMANCE
P1dB and Efficiciency Vs Frequency
80
Efficiency
76
Power Gain Vs Frequency (P
60
56
18
17
16
OUT
= 60 W)
72
P1dB (W)
68
64
Vdd = 26 V
Idq = 200 mA
60
910 920 930 940 950 960 970
P1dB
f (MHz)
52
Nd (%)
48
44
40
15
14
Gp (dBm)
13
12
11
10
910 920 930 940 950 960 970
f (MHz)
Vdd = 26 V
Idq = 200 m A
2/4
TEST FIXTU R E CO M PONENT LAY O UT
TEST CIRCUIT PHOTOMASTER
DB-960-60W
TEST CIRCUIT COMPONENT PART LIST
Ref.
1 RF Power Amplifier Circuit PCIR501003 ETSA
CV1, CV2 Trim capacitor HQ 0.6-4.5pF 500V AT27273 TECK
C4 Chip Capacitor HQ 0603 100pF TA 5% 50V 500-CHA-101-JVLE TEKELEC
C10, C12 Chip Capacitor HQ 3.3pF TB +/- 0,25pF 500V 501-CHB-3R3-CVLE TEKELEC
C9 Chip Capacitor HQ 8,2pF TB +/- 0,25pF 500V 501-CHB-8R2-CVLE TEKELEC
C5, C7, C13 Chip Capacitor HQ 10pF TB 5% 500V 501-CHB-100-JVLE TEKELEC
C6, C8 Chip Capacitor HQ 47pF TB 5% 500V 501-CHB-470-JVLE TEKELEC
C3 Chip Capacitor HQ 100pF TB 5% 500V 501-CHB-101-JVLE TEKELEC
C2 Capacitor 1206 100nF 63V X7R 10% VJ1206Y104KXAT/630 VISHAY
C1 Capacitor CMS tantale 1µF 20% 35V 293D105X9035B Vishay-Sprague
R1 Resistor CMS 4,7K 1206 1/4W 5% 27597 BOURNS
R2 Resistor CMS 10K 1206 1/4W 5% 27605 BOURNS
P1 Trim resistor CMS cermet 3224W 10K 3224W-103 BOURNS
D1 Zener Diode 5.1V 500mW SOD80 BZV55C5V1 OMNITECH
T1 RF LDMOS Transistor 28V 70W 13dB GSM PD57070S STMicroélectronics
Value
Re f. M anu fa ctu re r Man u fa ctu re r
3/4
DB-960-60W
p
Information furnished is believed to be ac curate and reli able. Howev er, STMicroel ectronics assumes no responsibilit y for the cons equences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or patent rights of STMi croelectr onics. Specifications mentioned in thi s publicati on are s ubject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as cri tical comp onents in life support dev i ces or systems wi t hout express written ap proval of STMi croelect ronics.
The ST log o i s registered trademark of STMicroelectronics
2002 STMicroelectronics - All Right s Reserved
All other names are the property of their respective owners.
Australi a - Brazil - Canada - China - Fi nland - France - Germa ny - Hong Kong - India - Israel - Italy - Jap an -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
STMicroelectron ics GROUP OF COMPANIES
htt
://www.st.com
4/4
Loading...