查询DB-915-12W 供应商
12W / 12V / 875-915 MHz PA using 1x PD55015S
DB-915-12W
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
= 12 W min. with 12 dB gain over
OUT
875 - 915 MHz
• 10:1 LOAD VSWR CAPABILITY
• BeO FREE AMPLIFI E R.
DESCRIPTION
The DB-915-12W is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
amplifier designed as booster for
GSM-R applications.
The DB-915-12W is desig ned in coope ration with
Européenne de Télécommunications S.A
(www.etsa.fr), for high gain and broadband
performance operating in common source mode
at 12 V, capable of withstanding load mismatch up
to 10:1 all phases and with harmo nics lower t han
30 dBc.
The
MECHANICAL SPECIFICATION
L=60 mm W=30 mm H=10 mm
LdmosST
ORDER CODE
DB-915-12W
FAMILY
PRELIMINARY DATA
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
DD
I
D
P
DISS
T
CASE
T
amb
November, 20 2002
Supply voltage 18 V
Drain Current 4.5 A
Power Dissipation at T
Operating Case Temperature -20 to +85
Max. Ambient Temperature +55
CASE
CASE
= +85
= 25 °C)
°
C
67 W
o
C
o
C
1/5
DB-915-12W
ELECTRICAL SPECIFICATION (T
= +25 oC, Vdd = 26 V, Idq = 150 mA)
amb
Symbol Test Conditions Min. Typ. Max. Unit
FREQ. Frequency Range 875 915 MHz
P
Gain
P
1dB
Flatness
Flatness
ND at P
IRTL
Harmonic
VSWR
Spurious
IMD
1dB
3
OUT
= 12 W
11 12 dB
Over frequency range: 875 - 915 MHz 12 W
Over frequency range and @ P
P
from 0.1 W to 60 W
OUT
P
1dB
Input return Loss P
P
= 12 W
OUT
from 0.1 W to 12W
OUT
Load Mismatch all phases @ P
10:1 VSWR all phases and P
P
= 12 WPEP
OUT
= 12 W
OUT
= 12 W
OUT
from 0.1 to 12 W
OUT
+/- 0.5 dB
1dB
45 50 %
-6 dB
-30 dBc
10:1
-76 dBc
-25 dBc
2/5
TYPICAL PERFORMANCE
DB-915-12W
Power Gain vs. Frequency
16
15
14
13
12
Gp (dB)
11
10
Vcc = 12.5 V
Idq = 150 mA
9
8
865 875 885 895 905 915 925
f (MHz)
Drain Current vs. Frequency
4.0
3.5
3.0
2.5
Pin = 31 dBm
Pin = 25 dBm
Pin = 28 dBm
Pin = 31 dB m
Output Power vs. Frequency
24
22
20
18
16
14
12
Pout (W)
10
8
6
4
2
865 875 885 895 905 915 925
Pin = 31 dBm
Pin = 28 dBm
Pin = 25 dBm
f (MHz)
Input Return Loss vs. Frequency
0
-2
-4
-6
Pin = 31 dBm
Vcc = 12 . 5 V
Idq = 150 mA
2.0
Id (A)
1.5
1.0
0.5
0.0
865 875 885 895 905 915 925
Pin = 28 dBm
Pin = 25 dBm
f (MHz )
Output Power vs. Frequency
18
16
14
12
10
Pout (W)
8
6
4
2
865 875 885 895 905 915 925
Vdd = 10.8 V
Vdd = 15.6 V
Vdd = 12.5 V
f (MHz)
Vcc = 12.5 V
Idq = 150 mA
Pin = 28 d Bm
Idq = 150 m A
-8
RL (dB)
-10
-12
-14
-16
865 875 8 85 89 5 9 05 9 15 925
Pin = 2 8 dBm
f (MHz)
Pin = 2 5 dBm
Vcc = 12.5 V
Idq = 150 mA
3/5
DB-915-12W
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501-CHB-8R2-CVLE
501-CHB-100-JVLE
501-CHB-470-JVLE
501-CHB-101-JVLE
VJ1206Y104K X AT/630
µ
TEST FIXTU R E CO M PONENT LAY O UT
TEST CIRCUIT PHOTOMASTER
TEST CIRCUIT COMPONENT PART LIST
Ref.
1 RF Power Am plifier Circuit PCIR501003 ETSA
CV1, CV2 Trim capacitor HQ 0.6-4.5pF 500V AT27273 TECK
C4 Chip Capacitor HQ 0603 100pF TA 5% 5 0V
C10 Chip Capacitor HQ 5.6pF TB +/- 0,25pF 500V
C12 Chip Capacitor HQ 4.7pF TB +/- 0,25pF 500V
C5, C7,C9 C13 Chip Capacitor HQ 10pF TB 5% 500V
C6, C8 Chip Capa citor HQ 47pF T B 5% 500V
C3 Chip Capacitor HQ 100pF TB 5% 500V
C2 Capacitor 1206 100nF 63V X7R 1 0%
C1 Capacitor CMS tantale 1
R1 Resistor CMS 4,7K 1206 1/4W 5% 27597 BOURNS
R2 Resistor CMS 10K 1206 1/4W 5% 27605 BOURNS
P1 Trim resistor CM S cermet 3224W 10K 3224W -103 BOURNS
D1 Zener Diode 5.1V 500mW SOD80 BZV55C5V1 OMNITEC H
T1 RF LDMOS Transistor 12V 15W P D5 5015S STMicroélectronics
BOARD
TEFLON-GLASS Er = 2.55, THK = 0.762mm, COPPER
FLANGE 2 mm THICKNESS
4/5
Value
Ref. Manufacturer Manufacturer
F 20% 35 V 293 D 105X 903 5B Vishay-Sprague
MX3-30-C1/10C METCLAD
TEKELEC
TEKELEC
TEKELEC
TEKELEC
TEKELEC
TEKELEC
VISHAY
DB-915-12W
p
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or patent rights of STMi croelectr onics. Specifications mentioned in thi s publicati on are s ubject
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5/5
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