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DB-900-80W
80W / 26V / 869-894 MHz PA using 2x PD57045S
RF POWER AMPLIFIER DEMOBOARD USING
TWO N-CHANNEL ENHANCEMENT-MODE
LATERAL MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
= 80 W min. with 13 dB gain over
OUT
869-894 MHz
• 10:1 LOAD VSWR CAPABILITY
• BeO FREE AMPLIFIER
TYPICAL CDMA PERFORMANCE:
IS-95 CD MA / 9ch FWD
Pout = 14W
Gain = 13 dB
Nd = 22%
ACPR (750 KHz) : -45 dBc
ACPR (1.98 MHz) : -60 dBc
The
LdmoST
PRELIMINARY DATA
FAMILY
DESCRIPTION
The DB-900-80W is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
amplifier designed for IS-54/-136 & IS-95 base
station applications.
MECH. SPECIFICATION L=80 mm W=50 mm H=10 mm
ORDER CODE
DB-900-80W
The DB-900-80W is designed in cooperation
with Europeenne de Telecomunications S.A.
(www.etsa.rf), for high gain and broadband
performance operating in common source mode
at 26 V, capable of withstanding load mismatch
up to 10:1 all phases and with harmonics lower
than 30 dBc.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
P
T
CASE
P
DD
I
D
DISS
amb
Supply voltage 32 V
Drain Current 9
Power dissipation at Tcase = +85°C 135 W
Operating Case Temperature -20 to +85
Max. Ambient Temperature +55
CASE
= 25oC)
A
o
C
o
C
November, 20 2002
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DB-900-80W
ELECTRICAL SPECIFICATION (T
= +25oC, Vdd = 26V, Idq = 2 x 200 mA)
amb
Symbol Test Conditions Min. Typ. Max. Unit
FREQ. Frequency Range 869 894 MHz
Gain P
P
1dB
Flatness
Flatness
ND at P
1dB
IRTL
Harmonic
VSWR
Spurious
IMD
3
OUT
= 80 W
13 14 dB
Over frequency range: 869 - 894 MHz 80 90 W
Over frequency range and @ P
from 0.1W to 80 W
P
OUT
P
1dB
Input return Loss P
= 80 W
P
OUT
from 0.1W to 80 W
OUT
Load Mismatch all phases @ P
10:1 VSWR all phases and P
P
= 80 WPEP
OUT
= 80 W
OUT
= 80 W
OUT
from 0.1 to 80W
OUT
+/- 0.5 dB
1dB
45 50 %
-20 -15 dB
-40 -30 dBc
10:1
-76 dBc
-25 dBc
TYPICAL CDMA PERFORMANCE IS 95 / 9ch FWD (Vdd = 26V, Idq = 300mA)
Frequency
(MHz) (W ) (dB m ) (dB m ) (dBc) (dB c) (dBc) (dB c) (A ) (%)
865 0.63 16.3 28.0 50.5 51. 5 71 70 0.64 3.79
Pout
CH P WR
Pin
CH PW R
Pout
CH PW R
ACPR
-750 KHz
ACPR
+750 KHz
ACPR
-1.98 MHz
ACPR
+1. 98 MHz
Itotal Nd
875 0.63 15.7 28.0 52.0 53. 0 71 71 0.61 3.98
885 0.63 15.3 28.0 54.0 55. 0 71 71 0.60 4.04
895 0.63 14.9 28.0 55.0 54. 5 72 72 0.58 4.18
865 3.98 23.3 36.0 49.0 51. 0 68.0 68.0 1.42 10.78
875 3.98 23.0 36.0 49.5 51. 5 68.0 68.0 1.37 11.18
885 3.98 22.6 36.0 52.0 54. 0 69.0 69.0 1.32 11.60
895 3.98 22.3 36.0 52.0 54. 0 70.0 70.0 1.26 12.15
865 15.85 28.9 42.0 45 45 63 63 2.76 22.09
875 14.79 28.3 41.7 45 45 64 64 2.59 21.96
885 14.13 28.2 41.5 45 45 65 65 2.50 21.73
895 14.79 28.0 41.7 45 45 66 66 2.41 23.61
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TYPICAL PERFORMANCE
DB-900-80W
Output Power vs. Input Power
Pout (W)
110
100
90
890 MHz
860 MHz
880 MHz
900 MHz
870 MHz
Vdd = 26 V
Idq = 2 x 200 mA
80
70
60
50
40
30
20
10
0
0123456
Pin (W)
Power Gain vs. Frequency
Gp (dB)
18
17
16
15
14
13
12
11
10
850 860 870 880 890 900 910
f (MHz)
Pout = 5 W
Pout = 80 W
Pout = 90 W
Vdd = 26 V
Idq = 2 x 200 mA
Power Gain vs. Input Power
Gp (dB)
18
17
16
15
14
13
12
11
10
890 MHz
880 MHz
870 MHz
860 MHz
1 10 100 1000
900 MHz
Vdd = 26 V
Idq = 2 x 200 mA
Pout (W)
Efficiency vs. Frequency
Nd (%)
62
60
58
56
54
52
50
48
46
44
42
40
850 860 870 880 890 900 910
f (MHz)
Pout = 100 W
Pout = 90 W
Pout = 80 W
Vdd = 26 V
Idq = 2 x 200 mA
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DB-900-80W
TEST FIXTU R E CO M PONENT LAY O UT
CV1
CV2
TEST CIRCUIT PHOTOMASTER
Ref. ETSA c07/2000 - Ed1
4/6
Ref. ETSA c07/2000 - Ed1
DB-900-80W
TEST CIRCUIT COMPONENT PART LIST
COMPONENT DESCRIPTION
T1, T2 PD57045S TRANSISTOR
C1, C2, C23, C24 47pF - 500V CERAMIC CHIP CAPACITOR
C3, C4 4.7pF - 500V CERAMIC CHIP CAPACITOR
C5, C6, C17, C18 100pF - 500V CERAMIC CHIP CAPACITOR
C7, C8, C9, C10, C11, C12, C13, C14 10pF - 500V CERAMIC CHIP CAPACITOR
C15, C16 100nF - 63V CERAMIC CHIP CAPACITOR
C19, C20 1µF / 35V ELECTROLYTIC CAPACITOR
C21, C22 5.6pF - 500V CERAMIC CHIP CAPACITOR
C26, C27 6.8pF - 500V CERAMIC CHIP CAPACITOR
C25 0.5pF - 500V CERAMIC CHIP CAPACITOR
CV1, CV2 ADJUSTABLE CAPACITOR 0.6 - 4.5pF / 500V
P1, P2 10K Ohms MULTITURN POTENTIOMETER
R1,R7 100 Ohms 1/4W 1206 SMD CHIP RESISTOR
R2 50 Ohms 30W - 4GHz LOAD
R3, R4 4.7K Ohms 1/4W 1206 SMD CHIP RESISTOR
R5, R6 10K Ohms 1/4W 1206 SMD CHIP RESISTOR
D1, D2 ZENER DIODE 5V - 500 mW SOD80
SM1, SM2 90° SMD HYBRID COUPLER ANAREN Xinger 1304-3
BOARD METCLAD MX3-30-C1/10C THK 0.762 mm Cu 35µ
SUBSTRATE TEFLON-GLASS Er = 2.55
BACK SIDE COPPER FLANGE 2 mm THICKNESS
CERAMIC CHIP CAPACITORS ATC100B or EQUIVALENT
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DB-900-80W
p
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