查询DB-900-60W 供应商
60W / 26V / 869-894 MHz PA using 1x PD57070S
DB-900-60W
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
= 60 W min. with 13 dB gain over
OUT
869 - 894 MHz
• 10:1 LOAD VSWR CAPABILITY
• BeO FREE AMPLIFI E R.
DESCRIPTION
The DB-900-60W is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
amplifier designed for IS-54/-136 and IS-95 base
station applications.
The DB-900-60W is desig ned in coope ration with
Européenne de Télécommunications S.A
(www.etsa.fr), for high gain and broadband
performance operating in common source mode
at 26 V, capable of withstanding load mismatch up
to 10:1 all phases and with harmo nics lower t han
30 dBc.
The
MECHANICAL SPECIFICATION
L=60 mm W=30 mm H=10 mm
LdmosST
ORDER CODE
DB-900-60W
FAMILY
PRELIMINARY DATA
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
DD
I
D
P
DISS
T
CASE
P
amb
November, 20 2002
Supply voltage 32 V
Drain Current 8 A
Power Dissipation 95 W
Operating Case Temperature -20 to +85
Max. Ambient Temperature +55
CASE
= 25 °C)
o
C
o
C
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DB-900-60W
ELECTRICAL SPECIFICATION (T
= +25 oC, Vdd = 26 V, Idq = 250 mA)
amb
Symbol Test Conditions Min. Typ. Max. Unit
FREQ. Frequency Range 869 894 MHz
P
Gain
P
1dB
Flatness
Flatness
ND at P
IRTL
Harmonic
VSWR
Spurious
IMD
1dB
3
OUT
= 60 W
13 14 dB
Over frequency range: 869 - 894 MHz 60 65 W
Over frequency range and @ P
P
from 0.1 W to 60 W
OUT
P
1dB
Input return Loss P
P
= 60 W
OUT
from 0.1 W to 60 W
OUT
Load Mismatch all phases @ P
10:1 VSWR all phases and P
P
= 60 WPEP
OUT
= 60 W
OUT
= 60 W
OUT
from 0.1 to 60 W
OUT
+/- 0.5 dB
1dB
45 52 %
-15 -10 dB
-30 dBc
10:1
-76 dBc
-25 dBc
TYPICAL PERFORMANCE
Power Gain vs. Frequency
18
17
16
Pin = 28 dBm
P1dB vs. Frequency
80
70
15
Gp (dB)
14
13
12
865 870 875 880 885 890 895 900
Pin = 34 dBm
f (MHz)
Vcc = 26 V
Idq = 250 mA
Drain Efficiency at P1dB vs. Frequency
70
60
50
Nd (%)
40
30
Vcc = 26 V
Idq = 250 mA
20
865 870 875 880 885 890 895 900
f (MHz)
60
P1dB (W)
50
Vcc = 26 V
40
865 870 875 880 885 890 895 900
f (MHz)
Idq = 250 mA
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TEST FIXTU R E CO M PONENT LAY O UT
TEST CIRCUIT PHOTOMASTER
DB-900-60W
TEST CIRCUIT COMPONENT PART LIST
COMPO NENT DESCRIPTION
T1 PD57070S T R AN S ISTOR
C1 1µF / 35V ELECTROLYTIC CAPACITOR
C2 100nF - 63V C ER AMIC CH IP CA PA C ITOR
C3,C4 100pF - 500V CER AMIC CH IP CA PA CITOR
C5, C7, C13 10pF - 500V CER AMIC CH IP CA PA C ITOR
C6, C8 47pF - 500V CER AMIC CH IP CA PA C ITOR
C10 4.7pF - 500V CERAMIC CHIP CAPACITOR
C11 3.3pF - 500V CERAMIC CHIP CAPACITOR
C12, C9 6.8pF - 500V CERAMIC CHIP CAPACITOR
CV1 ADJU STA B LE CA PA C ITOR 0.6 - 4.5pF / 500V
P 1 10 K O hm s M U L TITUR N POTEN TIO M ETE R
R1 4.7K Ohm s 1/4W 1206 SMD CHIP RESISTO R
R2 10K Ohm s 1/4W 1206 SM D C H IP RE SISTO R
D1 ZE N ER D IODE 5V - 500 mW SO D 80
BO ARD ME TCLAD MX 3-30-C1/10C THK 0.762 mm Cu 35µ
SUBSTRATE TEFLON-GLASS Er = 2.55
BACK SIDE COPPE R FLANG E 2 mm THICKNESS
CERAMIC CHIP CAPACITORS ATC100B or EQUIVALENT
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DB-900-60W
p
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by implic ation or otherwise under any patent or patent rights of STMi croelectr onics. Specifications mentioned in thi s publicati on are s ubject
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