ST BZV47C5V1 User Manual
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FEATURES
VOLTAGERANGE: 5.1V to200 V
HERMETICALLYSEALEDPLASTICCASE:
F126 PACKAGE
HIGHSURGECAPABILITY: 55 W (10 ms) .
DESCRIPTION
2 W silicon Zener diodes.
BZV47C5V1/ 200
2W ZENER DIODES
F126
ABSOLUTE RATINGS(Tamb = 25°C)
Symbol Parameter Value Unit
P
T
stg
T
j
T
L
Powerdissipationon infiniteheatsink T
=55°C2W
amb
Storagetemperaturerange
Maximumjunction temperature
Maximumlead temperaturefor solderingduring10s at 5mm
- 65 to + 175
175
230 °C
fromcase
THERMAL RESISTANCES
Symbol Parameter Value Unit
(j-l)
R
th
R
(j-a)
th
Junctiontolead
Junctiontoambient on printedcircuit on recommendedpad
60 °C/W
100 °C/W
layout
°
°C
C
January 1998 Ed : 2
1/4
BZV47C5V1/ BZV47C200
ELECTRICALCHARACTERISTIC (Tamb= 25°C)
TYPES VZT@I
min. max. max. typ. max. T
ZT
rZK/I
I
ZK
ZT
∝VZIR/V
V
R
R
IZM I
=55°C
amb
(1) (1) (1) (2) (3)
-4
VVΩmA 10
/°C µAV mA A
BZV47C5V1 4.8 5.4 5 100 1 5 1 370 7.8
BZV47C5V6 5.2 6 2 100 2.5 5 1 330 7.1
BZV47C6V2 5.8 6.6 2 100 3.2 5 1 300 6.4
BZV47C7V5 7 7.9 2 100 4.5 5 2 250 5.4
BZV47C10 9.4 10.6 4 50 5.5 5 7.6 185 4
BZV47C12 11.4 12.7 7 50 6.5 1 9.1 155 3.3
BZV47C15 13.8 15.6 10 50 7 1 11.4 130 2.7
BZV47C18 16.8 19.1 15 25 7.5 0.5 13.7 105 2.2
BZV47C20 18.8 21.2 15 25 7.5 0.5 15.2 94 2
BZV47C22 20.8 23.3 15 25 8 0.5 16.7 86 1.8
BZV47C24 22.8 25.6 15 25 8 0.5 18.2 78 1.7
BZV47C27 25.1 28.9 15 25 8.5 0.5 20.5 69 1.5
BZV47C30 28 32 15 25 8.5 0.5 22.8 62 1.3
BZV47C36 34 38 40 10 8.5 0.5 27.4 52 1.1
BZV47C39 37 41 40 10 9 0.5 29.6 48 1
BZV47C47 44 50 45 10 9 0.5 35.7 40 0.85
BZV47C68 64 72 80 10 9 0.5 51.7 27 0.59
BZV47C100 94 106 200 5 9 0.5 76 18 0.4
BZV47C150 138 156 300 5 9.5 0.5 114 12.8 0.27
BZV47C200 188 212 350 5 9.5 0.5 152 9.4 0.20
Note 1 : Pulse test : tp ≤ 50ms
Note 2 : On infiniteheatsink :L = 10mm
Note 3 : rectangular waveform(tp = 10ms)
Forward voltage drop : V
≤ 1.2 V (Tamb= 25°C, IF= 500mA)
F
ZSM
Fig. 1 : Power dissipation versus ambient
temperature.
2/4
Fig.2 :Thermalresistanceversus lead length.
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