ST BYV54HR User Manual
July 2010 Doc ID 17416 Rev 1 1/8
8
BYV54HR
Aerospace 40 A - 200 V fast recovery rectifier
Features
■ Very small conduction losses
■ Negligible switching losses
■ High surge current capability
■ High avalanche energy capability
■ Hermetic package
■ Target radiation qualification:
– 150 krad (Si) low dose rate
– 1 Mrad high dose rate
■ Package mass: 10 g
■ ESCC qualified
Description
Packaged in a hermetic TO-254AA, this device is
intended for use in medium voltage, high
frequency switching mode power supplies, high
frequency DC to DC converters, and other
aerospace applications.
The complete ESCC specification for this device
is available from the European space agency web
site. ST guarantees full compliance of qualified
parts with such ESCC detailed specifications.
Figure 1. Device configuration
TO-254AA
2
3
1
BYV54S200FSY1
HRBBYV54S200FSY
Terminal 1:
Terminal 2:
Terminal 3:
The case is not connected to any lead
Cathode
Anode
Anode
Table 1. Device summary
(1)
1. Contact ST sales office for information about the specific conditions for products in die form and QML-Q versions.
Order code
ESCC detailed
specification
Quality level
Lead
finish
EPPL I
F(AV)
V
RRM
T
j(max)
V
F (max)
BYV54S200FSY1 -
Engineering
model
Gold -
40 A 200 V 150 °C 1.10 V
BYV54S200FSYHRB 5103/031/05 Flight part
Solder
dip
Y
www.st.com
Characteristics BYV54HR
2/8 Doc ID 17416 Rev 1
1 Characteristics
Table 2. Absolute maximum ratings
Symbol Characteristic Value Unit
I
FSM
Forward surge current
(1)
1. Sinusoidal pulse of 10 ms duration
400 A
V
RRM
Repetitive peak reverse voltage
(2)
2. Pulsed, duration 5 ms, F = 50 Hz
200 V
I
O
Average output rectified current (50% duty cycle):
(3)
3. For T
case
> +99 °C, derate linearly to 0 A at +150°C.
40 A
I
F(RMS)
Forward rms current 60 A
T
OP
Operating case temperature range
(4)
4. For devices with hot solder dip lead finish all testing performed at T
amb
> +125 °C are carried out in a 100%
inert atmosphere.
-55 to +150 °C
T
J
Junction temperature +150 °C
T
STG
Storage temperature range
(4)
-55 to +150 °C
T
SOL
Soldering temperature
(5)
5. Duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and the same
lead shall not be resoldered until 3 minutes have elapsed.
+260 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th (j-c)
Junction to case
(1)
1. Package mounted on infinite heatsink.
1.0 °C/W
BYV54HR Characteristics
Doc ID 17416 Rev 1 3/8
s
To evaluate the conduction losses use the following equation:
P = 0.74 x I
F(AV)
+ 1.00 x I
F
2
(RMS )
Table 4. Electrical measurements at ambiant temperature (per diode), T
amb
= 22 ±3 °C
Symbol Characteristic
MIL-STD-750
test method
Test conditions
(1)
Limits
Units
Min. Max.
I
R
Reverse current 4016 DC method, V
R
= 200 V - 50 µA
V
F1
(2)
Forward voltage 4011
Pulse method, I
F
= 20 A - 0.95 V
V
F2
(2)
Pulse method, I
F
= 30 A - 1.1 V
V
BR
Breakdown voltage 4021 I
R
= 100 µA 200 - V
C Capacitance 4001 V
R
= 10 V, F = 1 MHz - 400 pF
t
rr
Reverse recovery time 4031
I
F
= 1 A, V
R
= 30 V,
dI
F
/dt = -50 A/µs
-60ns
Z
th(j-c)
(3)
Relative thermal impedance,
junction to case
3101
I
H
= 15 to 40 A, t
H
= 50 ms
I
M
= 50 mA, t
md
= 100 µs
Calculate ΔV
F
(4)
°C/W
1. Testing performed with both anode terminals 2 and 3 tied ttogehter
2. Pulse width ≤ 680 µs, duty cycle ≤ 2%
3. Performed only during screening tests parameter drift values (initial measurements for HTRB), go-no-go.
4. The limits for ΔVF shall be defined by the manufacturer on every lot in accordance with MIL-STD-750 Method 3101 and
shall guarantee the R
th(j-c)
limits specified in maximum ratings.
Table 5. Electrical measurements at high and low temperatures (per diode)
Symbol Characteristic
MIL-STD-750
test method
Test conditions
(1)
Limits
Units
Min. Max.
I
R
Reverse current 4016
T
case
= +125 (+0, -5) °C
DC method, V
R
= 200 V
-40mA
V
F1
(2)
Forward voltage 4011
T
case
= +125 (+0, -5) °C
pulse method, I
F
= 20 A
-0.85V
T
case
= -55 (+0, -5) °C
pulse method, I
F
= 20 A
-1.15V
V
F2
(2)
T
case
= +125 (+0, -5) °C
pulse method, I
F
= 30 A
1.0
1. Read and record measurements shall be performed on a sample of 5 components with 0 failures allowed. Alternatively a
100% inspection may be performed.
2. Pulse width ≤ 680 µs, duty cycle ≤ 2%
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