ST BYV52HR User Manual
Aerospace 30 A - 200 V fast recovery rectifier
Features
■ Very small conduction losses
■ Negligible switching losses
■ High surge current capability
■ High avalanche energy capability
■ Hermetic package
■ Target radiation qualification:
– 150 krad (Si) low dose rate
– 3 Mrad high dose rate
■ Package mass: 10 g
■ ESCC qualified
BYV52HR
TO-254
Description
Figure 1. Device configuration
Packaged in an hermetic TO-254 this device is
intended for use in medium voltage, high
frequency switching mode power supplies, high
frequency DC to DC converters, and other
aerospace applications.
The complete ESCC specification for this device
Terminal 1:
Terminal 2:
Terminal 3:
The case is not connected to any lead
is available from the European space agency web
site. ST guarantees full compliance of qualified
parts with such ESCC detailed specifications.
Table 1. Device summary
Order code
ESCC detailed
specification
BYV52-200FSY1 -
BYV52-200FSYHRB 5103/030/01 Flight part
1. Contact ST sales office for information about the specific conditions for products in die form and QML-Q versions.
(1)
Quality level
Engineering
model
Lead
finish
Gold -
Solder
dip
Cathode
No connection
Anode
EPPL I
Y
V
F(AV)
30 A 200 V 150 °C 1.15 V
BYV52-200FSY1
BYV52-200FSYHRB
3
T
RRM
j(max)VF (max)
1
April 2010 Doc ID 17395 Rev 1 1/8
www.st.com
8
Characteristics BYV52HR
1 Characteristics
Table 2. Absolute maximum ratings
Symbol Characteristic Value Unit
(4)
(2)
(1)
(4)
400 A
200 V
(3)
30 A
-55 to +150 °C
-55 to +150 °C
+260 °C
> +125 °C are carried out in a 100%
amb
I
FSM
V
RRM
I
O
I
F(RMS)
T
OP
T
T
STG
T
SOL
Forward surge current (per diode)
Repetitive peak reverse voltage
Average output rectified current (50% duty cycle):
Forward rms current (per diode) 30 A
Operating case temperature range
Junction temperature +150 °C
J
Storage temperature range
Soldering temperature
(5)
1. Sinusoidal pulse of 10 ms duration
2. Pulsed, duration 5 ms, F = 50 Hz
3. For T
4. For devices with hot solder dip lead finish all testing performed at T
inert atmosphere.
5. Duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and the same
lead shall not be resoldered until 3 minutes have elapsed.
≥ +120°C, derate linearly to 0 A at +150°C.
case
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
Junction to case
th (j-c)
1. Package mounted on infinite heatsink.
(1)
0.9 °C/W
2/8 Doc ID 17395 Rev 1
BYV52HR Characteristics
Table 4. Electrical measurements at ambiant temperature (per diode), T
Symbol Characteristic
I
R
(1)
V
F1
(1)
V
F2
V
BR
C Capacitance 4001 V
t
rr
Z
th(j-c)
s
MIL-STD-750
test method
Test conditions
= 22 ±3 °C
amb
Limits
Min. Max.
Reverse current 4016 DC method, VR = 200 V - 25 µA
Forward voltage 4011
Pulse method, I
= 20 A - 1.01 V
F
Pulse method, IF = 30 A - 1.15 V
Breakdown voltage 4021 IR = 100 µA 200 - V
= 10 V, F = 1 MHz - 400 pF
R
= 1 A, VR = 30 V,
I
Reverse recovery time 4031
Relative thermal impedance,
(2)
junction to case
3101
F
/dt = -50 A/µs
dI
F
= 15 to 40 A, tH = 50 ms
I
H
= 50 mA, tmd = 100 µs
I
M
-55ns
Calculate ΔV
(3)
F
1. Pulse width ≤ 300µs, duty cycle ≤ 2%
2. Performed only during screening tests parameter drift values (initial measurements for HTRB), go-no-go.
3. The limits for ΔVF shall be defined by the manufacturer on every lot in accordance with MIL-STD-750 Method 3101 and
shall guarantee the R
Table 5. Electrical measurements at high and low temperatures (per diode)
limits specified in maximum ratings.
th(j-c)
Units
°C/W
Symbol Characteristic
I
Reverse current 4016
R
(2)
V
Forward voltage 4011
F2
MIL-STD-750
test method
Test conditions
T
= +125 (+0, -5) °C
case
DC method, V
T
= +125 (+0, -5) °C
case
pulse method, I
T
= +55 (+0, -5) °C
case
R
pulse method, I
1. Read and record measurements shall be performed on a sample of 5 components with 0 failures allowed. Alternatively a
100% inspection may be performed.
= 200 V
= 20 A
F
= 20 A
F
(1)
Limits
Min. Max.
-15mA
-0.95V
-1.15V
2. Pulse width ≤ 300µs, duty cycle ≤ 2%
To evaluate the conduction losses use the following equation:
P = 0.74 x I
F(AV)
+ 1.00 x I
F2(RMS )
Units
Doc ID 17395 Rev 1 3/8
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