ST BUT30V User Manual

®

BUT30V

NPN TRANSISTOR POWER MODULE

■NPN TRANSISTOR

■HIGH CURRENT POWER BIPOLAR MODULE

■VERY LOW Rth JUNCTION CASE

■SPECIFIED ACCIDENTAL OVERLOAD AREAS

■FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING

■LOW INTERNAL PARASITIC INDUCTANCE

APPLICATIONS:

■MOTOR CONTROL

■SMPS & UPS

■WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

Pin 4 not connected

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

Symbol	Parameter	Value	Unit
VCEV	Collector-Emitter Voltage (VBE = -5 V)	200	V
VCEO(sus)	Collector-Emitter Voltage (IB = 0)	125	V
VEBO	Emitter-Base Voltage (IC = 0)	7	V
IC	Collector Current	100	A
ICM	Collector Peak Current (tp = 10 ms)	150	A
IB	Base Current	20	A
IBM	Base Peak Current (tp = 10 ms)	30	A
Ptot	Total Dissipation at Tc = 25 oC	250	W
Visol	Insulation Withstand Voltage (RMS) from All	2500
	Four Terminals to External Heatsink
Tstg	Storage Temperature	-55 to 150	oC
Tj	Max. Operating Junction Temperature	150	oC
February 2003			1/7

BUT30V

THERMAL DATA

Rthj-case	Thermal	Resistance	Junction-case	Max	0.5	oC/W
Rthc-h	Thermal	Resistance	Case-heatsink With Conductive			oC/W
	Grease Applied			Max	0.05

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol	Parameter	Test Conditions				Min.	Typ.	Max.	Unit
ICER	Collector Cut-off	VCE = VCEV		Tc = 100 oC				1	mA
	Current (RBE = 5 Ω)	VCE = VCEV						5	mA
ICEV	Collector Cut-off	VCE = VCEV		Tc = 100 oC				1	mA
	Current (VBE = -5V)	VCE = VCEV						4	mA
IEBO	Emitter Cut-off Current	VEB = 5 V						1	mA
	(IC = 0)
VCEO(sus)*	Collector-Emitter	IC = 0.2 A	L = 25 mH			125			V
	Sustaining Voltage	Vclamp = 125 V
	(IB = 0)
hFE	DC Current Gain	IC = 100 A	VCE = 5				27
VCE(sat)	Collector-Emitter	IC = 50 A	IB = 2.5 A		Tc = 100 oC		0.45	0.9	V
	Saturation Voltage	IC = 50 A	IB = 2.5 A				0.55	1.2	V
		IC = 100 A	IB = 10 A				0.7	0.9	V
		IC = 100 A	IB = 10 A Tc = 100 oC				0.9	1.5	V
VBE(sat)	Base-Emitter	IC = 50 A	IB = 2.5 A		Tc = 100 oC		1.15	1.4	V
	Saturation Voltage	IC = 50 A	IB = 2.5 A				1.1	1.4	V
		IC = 100 A	IB = 10 A				1.45	1.8	V
		IC = 100 A	IB = 10 A Tc = 100 oC				1.55	1.9	V
diC/dt	Rate of Rise of	VCC = 300 V		RC = 0	tp = 3 μs	270	350		A/μs
	On-state Collector	IB1 = 15 A		Tc = 100 oC
VCE(3 μs)	Collector-Emitter	VCC = 300 V		RC = 1 Ω			2.7	3.5	V
	Dynamic Voltage	IB1 = 15 A		Tc = 100 oC
VCE(5 μs)	Collector-Emitter	VCC = 300 V		RC = 1 Ω			2	2.5	V
	Dynamic Voltage	IB1 = 15 A		Tc = 100 oC
ts	Storage Time	IC = 100 A		VCC = 90 V			1	2	μs
tf	Fall Time	VBB = -5 V		RBB = 0.47 Ω			0.1	0.2	μs
tc	Cross-over Time	Vclamp = 125 V		IB1 = 10 A			0.2	0.35	μs
		L = 45 μH		Tc = 100 oC
VCEW	Maximum Collector	ICWoff = 150 A		IB1 = 10 A		125			V
	Emitter Voltage	VBB = -5 V		VCC = 90 V
	Without Snubber	L = 30 μH		RBB = 0.5 Ω

Tc = 125 oC

Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %

2/7

BUT30V

Safe Operating Areas

Thermal Impedance

Derating Curve

Collector-emitter Voltage Versus

Base Emitter Resistance

Collector Emitter Saturation Voltage

Base-Emitter Saturation Voltage

3/7