®
NPN TRANSISTOR POWER MODULE
■ NPN TRANSISTOR
■ HIGH CURRENT POWER BIPOLAR MODULE
■ VERY LOW R
■ SPECIFIE D ACCI DENTA L OVERLOAD
AREAS
■ FULLY INSULATE D PA CKA GE (U. L.
COMPLIANT) FOR EASY MOUNTING
■ LOW INTERNAL PARASITIC INDUCTANCE
JUNCTION CASE
th
BUT30V
APPLICATIONS:
■ MOTOR CONT RO L
■ SMPS & UPS
■ WELDING EQUIPMENT
Pin 4 not connected
ISOTOP
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CEO(sus)
V
V
I
I
P
V
T
Collector-Emitter Voltage (VBE = -5 V) 200 V
CEV
Collector-Emitter Voltage (IB = 0) 125 V
Emitter-Base Voltage (IC = 0) 7 V
EBO
I
Collector Current 100 A
C
Collector Peak Current (tp = 10 ms) 150 A
CM
I
Base Current 20 A
B
Base Peak Current (tp = 10 ms) 30 A
BM
Total Dissipation at Tc = 25 oC 250 W
tot
Insulation Withstand Voltage (RMS) from All
isol
2500
Four Terminals to External Heatsink
Storage Temperature -55 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
February 2003
1/7
BUT30V
THERMAL DATA
R
thj-case
R
thc-h
Thermal Resistance Junction-case Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied Max
0.5
0.05
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CEV
I
EBO
V
CEO(sus)
Collector Cut-off
Current (R
= 5 Ω)
BE
Collector Cut-off
Current (V
= -5V)
BE
Emitter Cut-off Current
(I
= 0)
C
* Collector-Emitter
Sustaining Voltage
(I
= 0)
B
∗ DC Current Gain IC = 100 A VCE = 5 27
h
FE
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
di
/dt Rate of Rise of
C
On-state Collector
V
(3 µs) Collector-Emitter
CE
Dynamic Voltage
V
(5 µs) Collector-Emitter
CE
Dynamic Voltage
t
Storage Time
s
Fall Time
t
f
Cross-over Time
t
c
V
CEW
Maximum Collector
Emitter Voltage
Without Snubber
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
V
= V
CE
VCE = V
V
VCE = V
V
I
C
V
IC = 50 A IB = 2.5 A
I
C
I
C
I
C
IC = 50 A IB = 2.5 A
I
C
I
C
I
C
V
I
B1
V
I
B1
V
I
B1
IC = 100 A VCC = 90 V
V
V
L = 45 µH T
I
CWoff
V
L = 30 µH R
T
CEV
Tc = 100 oC
CEV
= V
CE
CEV
Tc = 100 oC
CEV
= 5 V 1 mA
EB
= 0.2 A L = 25 mH
= 125 V
clamp
125 V
0.45
= 50 A IB = 2.5 A Tc = 100 oC
= 100 A IB = 10 A
= 100 A IB = 10 A Tc = 100 oC
0.55
0.7
0.9
1.15
= 50 A IB = 2.5 A Tc = 100 oC
= 100 A IB = 10 A
= 100 A IB = 10 A Tc = 100 oC
= 300 V RC = 0 tp = 3 µs
CC
270 350 A/µs
1.1
1.45
1.55
= 15 A Tc = 100 oC
= 300 V RC = 1 Ω
CC
2.7 3.5 V
= 15 A Tc = 100 oC
= 300 V RC = 1 Ω
CC
2 2.5 V
= 15 A Tc = 100 oC
1
= -5 V RBB = 0.47 Ω
BB
= 125 V IB1 = 10 A
clamp
= 100 oC
c
= 150 A IB1 = 10 A
= -5 V VCC = 90 V
BB
= 0.5 Ω
= 125 oC
c
BB
125 V
0.1
0.2
1
5
1
4
0.9
1.2
0.9
1.5
1.4
1.4
1.8
1.9
2
0.2
0.35
mA
mA
mA
mA
V
V
V
V
V
V
V
V
µs
µs
µs
2/7
BUT30 V
Safe Operating Area s
Derating Curve
Thermal Impedance
Collector-emitter Voltage Versus
Base Emitter Resis tance
Collector Emitter Saturation Voltage
Base-Emitt er Saturation Volt a ge
3/7
BUT30V
Reverse B iased SOA
Reverse B iased AOA
Foward Biased SOA
Forward Biased AOA
Switching Times Inductive Load
4/7
Switching Tim es Inductive Load V ersus
Temperature
Dc Current Gain Turn-on Switching Test Circuit
(1) Fast electronic switch (2) Non-inductive load
Turn-on Switching Waveforms
BUT30V
Turn-off Switching Test Circuit
(1) Fast electronic switch (2) Non-inductive load
(3) Fast recovery rectifier
Turn-off Switching Waveforms
5/7
BUT30V
ISOTOP MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.8 12.2 0.465 0.480
A1 8.9 9.1 0.350 0.358
B 7.8 8.2 0.307 0.322
C 0.75 0.85 0.029 0.033
C2 1.95 2.05 0.076 0.080
D 37.8 38.2 1.488 1.503
D1 31.5 31.7 1.240 1.248
E 25.15 25.5 0.990 1.003
E1 23.85 24.15 0.938 0.950
E2 24.8 0.976
G 14.9 15.1 0.586 0.594
G1 12.6 12.8 0.496 0.503
G2 3.5 4.3 0.137 1.169
F 4.1 4.3 0.161 0.169
F1 4.6 5 0.181 0.196
P 4 4.3 0.157 0.169
P1 4 4.4 0.157 0.173
S 30.1 30.3 1.185 1.193
mm inch
6/7
P093A
BUT30 V
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under an y patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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