ST BUT30V User Manual
®
NPN TRANSISTOR POWER MODULE
■ NPN TRANSISTOR
■ HIGH CURRENT POWER BIPOLAR MODULE
■ VERY LOW R
■ SPECIFIE D ACCI DENTA L OVERLOAD
AREAS
■ FULLY INSULATE D PA CKA GE (U. L.
COMPLIANT) FOR EASY MOUNTING
■ LOW INTERNAL PARASITIC INDUCTANCE
JUNCTION CASE
th
BUT30V
APPLICATIONS:
■ MOTOR CONT RO L
■ SMPS & UPS
■ WELDING EQUIPMENT
Pin 4 not connected
ISOTOP
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CEO(sus)
V
V
I
I
P
V
T
Collector-Emitter Voltage (VBE = -5 V) 200 V
CEV
Collector-Emitter Voltage (IB = 0) 125 V
Emitter-Base Voltage (IC = 0) 7 V
EBO
I
Collector Current 100 A
C
Collector Peak Current (tp = 10 ms) 150 A
CM
I
Base Current 20 A
B
Base Peak Current (tp = 10 ms) 30 A
BM
Total Dissipation at Tc = 25 oC 250 W
tot
Insulation Withstand Voltage (RMS) from All
isol
2500
Four Terminals to External Heatsink
Storage Temperature -55 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
February 2003
1/7
BUT30V
THERMAL DATA
R
thj-case
R
thc-h
Thermal Resistance Junction-case Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied Max
0.5
0.05
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CEV
I
EBO
V
CEO(sus)
Collector Cut-off
Current (R
= 5 Ω)
BE
Collector Cut-off
Current (V
= -5V)
BE
Emitter Cut-off Current
(I
= 0)
C
* Collector-Emitter
Sustaining Voltage
(I
= 0)
B
∗ DC Current Gain IC = 100 A VCE = 5 27
h
FE
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
di
/dt Rate of Rise of
C
On-state Collector
V
(3 µs) Collector-Emitter
CE
Dynamic Voltage
V
(5 µs) Collector-Emitter
CE
Dynamic Voltage
t
Storage Time
s
Fall Time
t
f
Cross-over Time
t
c
V
CEW
Maximum Collector
Emitter Voltage
Without Snubber
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
V
= V
CE
VCE = V
V
VCE = V
V
I
C
V
IC = 50 A IB = 2.5 A
I
C
I
C
I
C
IC = 50 A IB = 2.5 A
I
C
I
C
I
C
V
I
B1
V
I
B1
V
I
B1
IC = 100 A VCC = 90 V
V
V
L = 45 µH T
I
CWoff
V
L = 30 µH R
T
CEV
Tc = 100 oC
CEV
= V
CE
CEV
Tc = 100 oC
CEV
= 5 V 1 mA
EB
= 0.2 A L = 25 mH
= 125 V
clamp
125 V
0.45
= 50 A IB = 2.5 A Tc = 100 oC
= 100 A IB = 10 A
= 100 A IB = 10 A Tc = 100 oC
0.55
0.7
0.9
1.15
= 50 A IB = 2.5 A Tc = 100 oC
= 100 A IB = 10 A
= 100 A IB = 10 A Tc = 100 oC
= 300 V RC = 0 tp = 3 µs
CC
270 350 A/µs
1.1
1.45
1.55
= 15 A Tc = 100 oC
= 300 V RC = 1 Ω
CC
2.7 3.5 V
= 15 A Tc = 100 oC
= 300 V RC = 1 Ω
CC
2 2.5 V
= 15 A Tc = 100 oC
1
= -5 V RBB = 0.47 Ω
BB
= 125 V IB1 = 10 A
clamp
= 100 oC
c
= 150 A IB1 = 10 A
= -5 V VCC = 90 V
BB
= 0.5 Ω
= 125 oC
c
BB
125 V
0.1
0.2
1
5
1
4
0.9
1.2
0.9
1.5
1.4
1.4
1.8
1.9
2
0.2
0.35
mA
mA
mA
mA
V
V
V
V
V
V
V
V
µs
µs
µs
2/7
BUT30 V
Safe Operating Area s
Derating Curve
Thermal Impedance
Collector-emitter Voltage Versus
Base Emitter Resis tance
Collector Emitter Saturation Voltage
Base-Emitt er Saturation Volt a ge
3/7
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