ST BUL381, BUL382 User Manual

BUL381

BUL381

BUL382

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

■STM PREFERRED SALESTYPES

■HIGH VOLTAGE CAPABILITY

■MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

■VERY HIGH SWITCHING SPEED

■FULLY CHARACTERISED AT 125oC

APPLICATIONS

■ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING

■SWITCH MODE POWER SUPPLIES

DESCRIPTION

The BUL381 and BUL382 manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. They use a Hollow Emitter structure to enhance switching speeds.

The BUL series is designed for use in lighting applications and low cost switch-mode power supplies.

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INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Val ue	Uni t
VCES	Collector-Emitter Voltage (VBE = 0)	800	V
VCEO	Collector-Emitter Voltage (IB = 0)	400	V
VEBO	Emitter-Base Voltage (IC = 0)	9	V
IC	Collector Current	5	A
ICM	Collector Peak Current (tp < 5 ms)	8	A
IB	Base Current	2	A
IBM	Base Peak Current (tp < 5 ms)	4	A
Pt ot	Total Dissipation at Tc = 25 oC	70	W
Tstg	Storage Temperature	-65 to 150	oC
Tj	Max. Operating Junction Temperature	150	oC

June 1998

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BUL381 / BUL382

THERMAL DATA

Rt hj-ca se	Thermal	Resistance	Junction-Case	Max	1.78	oC/W
Rt hjamb	Thermal	Resistance	Junction-Ambient	Max	62.5	oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symb ol	Parameter	Test Cond ition s			Mi n. Typ . Max. Un it
ICES	Collector Cut-off	VCE = 800 V		Tj = 125 oC		100	μA
	Current (VBE = 0)	VCE = 800 V				500	μA
ICEO	Collector Cut-off	VCE = 400 V				250	μA
	Current (IB = 0)
VCEO(sus)	Collector-Emitter	IC = 100 mA		L = 25 mH	400		V
	Sustaining Voltage
VEBO	Emitter-Base Voltage	IE = 10 mA			9		V
	(IC = 0)
VCE(sat )	Collector-Emitter	IC = 1 A	IB = 0.2 A			0.5	V
	Saturation Voltage	IC = 2 A	IB = 0.4 A			0.7	V
		IC = 3 A	IB = 0.8 A			1.1	V
VBE(s at)	Base-Emitter	IC = 1 A	IB = 0.2 A			1.1	V
	Saturation Voltage	IC = 2 A	IB = 0.4 A			1.2	V
hFE	DC Current Gain	IC = 2 A		VCE = 5 V	8
		IC = 10 mA		VCE = 5 V	10
	RESISTIVE LOAD	VCC = 250	V	IC = 2 A			μs
tON	Turn-on Time	IB1 = 0.4 A		IB2 = -0.4 A		1
ts	Storage Time	(for BUL381only)			1.4	2.2	μs
tf	Fall Time	tp = 30 μs				800	ns
	RESISTIVE LOAD	VCC = 250	V	IC = 2 A			μs
tON	Turn-on Time	IB1 = 0.4 A		IB2 = -0.4 A		1
ts	Storage Time	(for BUL382 only)			1.7	2.5	μs
tf	Fall Time	tp = 30 μs				800	ns
	INDUCTIVE LOAD	IC = 2 A VCL = 250 V					μs
ts	Storage Time	IB1 = 0.4 A		IB2 = -0.8 A	1.7	2.6
tf	Fall Time	L = 200 μH			75	120	ns
	INDUCTIVE LOAD	IC = 2 A VCL = 250 V					μs
ts	Storage Time	IB1 = 0.4 A		IB2 = -0.8 A	2.6
tf	Fall Time	L = 200 μH		Tj = 125 oC	150		ns

Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %

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BUL381 / BUL382

Safe Operating Areas

Derating Curves

DC Current Gain

DC Current Gain

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

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