查询BUF420M供应商
®
HIGH VOLTAGE FAST-SWITCHING
■
STMicroelectronics PREFERRED
SALESTYPE
■
HIGH VOL T A G E C A PABILITY
■
VERY HIGH SW ITCHI NG SPEED
■
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
■
LOW BASE-D RIVE REQUIREMENT S
APPLICATIONS:
■
SWITCH MODE POWER SUPPLIES
■
MOTOR CONTROL
DESCRIPTION
The BUF420M is manufactured using High
Voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capacity. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUF series is designed for use in
high-frequency power supplies and motor control
applications.
BUF420M
NPN POWER TRANSISTOR
1
2
TO-3
(version "R")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
March 2002
Collector-Emitter Voltage (VBE = -1.5V) 850 V
CEV
Collector-Emitter Voltage (IB = 0) 450 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
I
Collector Current 30 A
C
Collector Peak Current (tp < 5 ms) 60 A
CM
I
Base Current 6 A
B
Base Peak Current (tp < 5 ms) 9 A
BM
Total Dissipation at Tc = 25 oC 275 W
tot
Storage Temperature -65 to 200
stg
T
Max. Operating Junction Temperature 200
j
o
C
o
C
1/8
BUF420M
THERMAL DATA
R
thj-case
Thermal Resistance Junction-Case Max 0.63
o
C/W
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CEV
I
EBO
V
CEO(sus)
Collector Cut-off
Current (R
= 5 Ω)
BE
Collector Cut-off
Current (V
= -1.5V)
BE
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
V
= 850 V
CE
V
= 850 V TC = 100 oC
CE
= 850 V
V
CE
V
= 850 V TC = 100 oC
CE
= 5 V 1 mA
V
EB
I
= 200 mA L = 25 mH 450 V
C
0.2
1
0.2
1
Sustaining Voltage
(I
= 0)
B
V
V
CE(sat)
EBO
Emitter Base Voltage
(I
= 0)
C
∗ Collector-Emitter
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
di
/dt Rate of rise on-state
c
Collector Current
V
(3µs) Collector-Emitter
CE
Dynamic Voltage
V
(5µs) Collector-Emitter
CE
Dynamic Voltage
INDUCTIVE LOAD
t
t
Storage Time
s
Fall Time
t
f
Cross Over Time
c
INDUCTIVE LOAD
Storage Time
s
Fall Time
t
f
Cross Over Time
c
Maximum Collector
V
t
t
CEW
Emi tte r V ol tag e
without Snubber
INDUCTIVE LOAD
t
t
Storage Time
s
Fall Time
t
f
Cross Over Time
c
= 50 mA 7 V
I
E
= 10A IB = 1 A
I
C
I
= 10 A IB = 1 A TC =100oC
C
I
= 20 A IB = 4 A
C
I
= 20 A IB = 4 A TC =100oC
C
= 10A IB = 1 A
I
C
I
= 10 A IB = 1 A TC =100oC
C
I
= 20 A IB = 4 A
C
I
= 20 A IB = 4 A TC =100oC
C
V
= 300 V RC = 0 tp = 3 µs
CC
I
= 1.5 A TC =25oC
B1
I
= 1.5 A TC =100oC
B1
I
= 6 A TC =100oC
B1
V
= 300 V RC = 60 Ω
CC
I
= 1.5 A TC =25oC
B1
I
= 1.5 A TC =100oC
B1
V
= 300 V RC = 60 Ω
CC
I
= 1.5 A TC =25oC
B1
I
= 1.5 A TC =100oC
B1
I
= 10 A VCC = 50 V
C
= - 5 V RBB = 0.6 Ω
V
BB
V
= 400 V IB1 = 1 A
clamp
L = 0.25 mH
I
= 10 A VCC = 50 V
C
= - 5 V RBB = 0.6 Ω
V
BB
V
= 400 V IB1 = 1 A
clamp
L = 0.25 mH T
=100oC
C
IC = 10 A VCC = 50 V
= - 5 V RBB = 0.6 Ω
V
BB
I
= 1 A L = 0.25 mH
B1
T
=125oC
C
I
= 10 A VCC = 50 V
C
= 0 RBB = 0.15 Ω
V
BB
V
= 400 V IB1 = 1 A
clamp
L = 0.25 mH
70
150
500 V
0.8
2.8
0.5
2
0.9
1.5
1.1
1.5
100 A/µs
2.1
8
1.1
4
1
0.05
0.08
2
0.1
0.18
1.5
0.04
0.07
mA
mA
mA
mA
V
V
V
V
V
V
V
V
A/µs
A/µs
V
V
V
V
µs
µs
µs
µs
µs
µs
µs
µs
µs
2/8
BUF420M
ELECTRICAL CHARACTERISTICS
(continued)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
= 10 A VCC = 50 V
C
= 0 RBB = 0.15 Ω
V
BB
V
= 400 V IB1 = 1 A
clamp
L = 0.25 mH T
I
= 10 A VCC = 50 V
C
= 0 RBB = 0.15 Ω
V
BB
I
= 1 A L = 0.25 mH
B1
T
=125oC
C
I
= 20 A VCC = 50 V
C
= -5 V RBB =0.6 Ω
V
BB
V
= 400 V IB1 = 4 A
clamp
=100oC
C
L = 0.12 mH
I
= 20 A VCC = 50 V
C
= - 5 V RBB = 0.6 Ω
V
BB
V
= 400 V IB1 = 4 A
clamp
L = 0.12 mH T
I
= 30 A VCC = 50 V
CWoff
= - 5 V RBB = 0.6 Ω
V
BB
L = 0.12 mH I
T
=125oC
C
=125oC
C
= 6 A
B1
3
0.15
0.25
500 V
2.2
0.06
0.12
3.5
0.12
0.3
400 V
V
V
t
s
t
f
t
c
CEW
t
s
t
f
t
c
t
s
t
f
t
c
CEW
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
Maximum Collector
Emi tte r V ol tag e
without Snubber
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
Maximum Collector
Emi tte r V ol tag e
without Snubber
µs
µs
µs
µs
µs
µs
µs
µs
µs
3/8
BUF420M
DC Current Gain
Collector Emitter Saturation Voltage
DC Current Gain
Base Emitter Saturation Voltage
Forward Biased Safe Operating Area
4/8
Reverse Biased Safe Operating Area
Storage Time Versus Pulse Time.
BUF420M
Figure 1:
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Inductive Load Switching Test Circuit.
5/8
BUF420M
Turn-on Switching Test Waveforms.
Turn-off Switching Test Waveforms
(inductive load).
6/8
TO-3 (version R) MECHANICAL DATA
BUF420M
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.7 0.460
B 0.96 1.10 0.037 0.043
C 1.70 0.066
D 8.7 0.342
E 20.0 0.787
G 10.9 0.429
N 16.9 0.665
P 26.2 1.031
R 3.88 4.09 0.152 0.161
U 39.50 1.555
V 30.10 1.185
mm inch
P
A
G
U
V
N
O
B
D
C
E
R
P003N
7/8
BUF420M
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any in fringe ment o f patents or other rig hts of third par ties wh ich may result from its u se. N o li cen se is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized f or use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectro nics – Printed in Italy – All Rights Reserved
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8/8
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