ST BUF420M User Manual
BUF420M
® |
BUF420M |
|
HIGH VOLTAGE FAST-SWITCHING |
|
NPN POWER TRANSISTOR |
■STMicroelectronics PREFERRED SALESTYPE
■HIGH VOLTAGE CAPABILITY
■VERY HIGH SWITCHING SPEED
■MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
■LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS:
■SWITCH MODE POWER SUPPLIES
■MOTOR CONTROL
DESCRIPTION
The BUF420M is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
The BUF series is designed for use in high-frequency power supplies and motor control applications.
ABSOLUTE MAXIMUM RATINGS
1
2
TO-3
(version "R")
INTERNAL SCHEMATIC DIAGRAM
Symbol |
Parameter |
Value |
Unit |
|
|
|
|
VCEV |
Collector-Emitter Voltage (VBE = -1.5V) |
850 |
V |
VCEO |
Collector-Emitter Voltage (IB = 0) |
450 |
V |
VEBO |
Emitter-Base Voltage (IC = 0) |
7 |
V |
IC |
Collector Current |
30 |
A |
ICM |
Collector Peak Current (tp < 5 ms) |
60 |
A |
IB |
Base Current |
6 |
A |
IBM |
Base Peak Current (tp < 5 ms) |
9 |
A |
Ptot |
Total Dissipation at Tc = 25 oC |
275 |
W |
Tstg |
Storage Temperature |
-65 to 200 |
oC |
Tj |
Max. Operating Junction Temperature |
200 |
oC |
March 2002 |
1/8 |
|
|
BUF420M
THERMAL DATA
Rthj-case |
Thermal Resistance Junction-Case |
Max |
0.63 |
oC/W |
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
|
|
ICER |
Collector Cut-off |
VCE = 850 V |
TC = 100 oC |
|
|
0.2 |
mA |
|
Current (RBE = 5 Ω) |
VCE = 850 V |
|
|
1 |
mA |
|
ICEV |
Collector Cut-off |
VCE = 850 V |
TC = 100 oC |
|
|
0.2 |
mA |
|
Current (VBE = -1.5V) |
VCE = 850 V |
|
|
1 |
mA |
|
IEBO |
Emitter Cut-off Current |
VEB = 5 V |
|
|
|
1 |
mA |
|
(IC = 0) |
|
|
|
|
|
|
VCEO(sus) |
Collector-Emitter |
IC = 200 mA |
L = 25 mH |
450 |
|
|
V |
|
Sustaining Voltage |
|
|
|
|
|
|
|
(IB = 0) |
|
|
|
|
|
|
VEBO |
Emitter Base Voltage |
IE = 50 mA |
|
7 |
|
|
V |
|
(IC = 0) |
|
|
|
|
|
|
VCE(sat) |
Collector-Emitter |
IC = 10A |
IB = 1 A |
|
0.8 |
|
V |
|
Saturation Voltage |
IC = 10 A |
IB = 1 A TC =100oC |
|
|
2.8 |
V |
|
|
IC = 20 A |
IB = 4 A |
|
0.5 |
|
V |
|
|
IC = 20 A |
IB = 4 A TC =100oC |
|
|
2 |
V |
VBE(sat) |
Base-Emitter |
IC = 10A |
IB = 1 A |
|
0.9 |
|
V |
|
Saturation Voltage |
IC = 10 A |
IB = 1 A TC =100oC |
|
|
1.5 |
V |
|
|
IC = 20 A |
IB = 4 A |
|
1.1 |
|
V |
|
|
IC = 20 A |
IB = 4 A TC =100oC |
|
|
1.5 |
V |
dic/dt |
Rate of rise on-state |
VCC = 300 V |
RC = 0 tp = 3 μs |
|
|
|
|
|
Collector Current |
IB1 = 1.5 A |
TC =25oC |
|
100 |
|
A/μs |
|
|
IB1 = 1.5 A |
TC =100oC |
70 |
|
|
A/μs |
|
|
IB1 = 6 A |
TC =100oC |
150 |
|
|
A/μs |
VCE(3μs) |
Collector-Emitter |
VCC = 300 V |
RC = 60 Ω |
|
|
|
|
|
Dynamic Voltage |
IB1 = 1.5 A |
TC =25oC |
|
2.1 |
|
V |
|
|
IB1 = 1.5 A |
TC =100oC |
|
|
8 |
V |
VCE(5μs) |
Collector-Emitter |
VCC = 300 V |
RC = 60 Ω |
|
|
|
|
|
Dynamic Voltage |
IB1 = 1.5 A |
TC =25oC |
|
1.1 |
|
V |
|
|
IB1 = 1.5 A |
TC =100oC |
|
|
4 |
V |
|
INDUCTIVE LOAD |
IC = 10 A |
VCC = 50 V |
|
|
|
μs |
ts |
Storage Time |
VBB = - 5 V |
RBB = 0.6 Ω |
|
1 |
|
|
tf |
Fall Time |
Vclamp = 400 V |
IB1 = 1 A |
|
0.05 |
|
μs |
tc |
Cross Over Time |
L = 0.25 mH |
|
|
0.08 |
|
μs |
|
INDUCTIVE LOAD |
IC = 10 A |
VCC = 50 V |
|
|
|
μs |
ts |
Storage Time |
VBB = - 5 V |
RBB = 0.6 Ω |
|
|
2 |
|
tf |
Fall Time |
Vclamp = 400 V |
IB1 = 1 A |
|
|
0.1 |
μs |
tc |
Cross Over Time |
L = 0.25 mH |
TC =100oC |
|
|
0.18 |
μs |
VCEW |
Maximum Collector |
IC = 10 A |
VCC = 50 V |
500 |
|
|
V |
|
Emitter Voltage |
VBB = - 5 V |
RBB = 0.6 Ω |
|
|
|
|
|
without Snubber |
IB1 = 1 A |
L = 0.25 mH |
|
|
|
|
|
|
TC =125oC |
|
|
|
|
|
|
INDUCTIVE LOAD |
IC = 10 A |
VCC = 50 V |
|
|
|
μs |
ts |
Storage Time |
VBB = 0 |
RBB = 0.15 Ω |
|
1.5 |
|
|
tf |
Fall Time |
Vclamp = 400 V |
IB1 = 1 A |
|
0.04 |
|
μs |
tc |
Cross Over Time |
L = 0.25 mH |
|
|
0.07 |
|
μs |
|
|
|
|
|
|
|
|
2/8 |
|
|
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|
|
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|
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|
|
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|
BUF420M
ELECTRICAL CHARACTERISTICS (continued)
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
|
|
|
INDUCTIVE LOAD |
IC = 10 A |
VCC = 50 V |
|
|
|
μs |
ts |
Storage Time |
VBB = 0 |
RBB = 0.15 Ω |
|
|
3 |
|
tf |
Fall Time |
Vclamp = 400 V |
IB1 = 1 A |
|
|
0.15 |
μs |
tc |
Cross Over Time |
L = 0.25 mH |
TC =100oC |
|
|
0.25 |
μs |
VCEW |
Maximum Collector |
IC = 10 A |
VCC = 50 V |
500 |
|
|
V |
|
Emitter Voltage |
VBB = 0 |
RBB = 0.15 Ω |
|
|
|
|
|
without Snubber |
IB1 = 1 A |
L = 0.25 mH |
|
|
|
|
|
|
TC =125oC |
|
|
|
|
|
|
INDUCTIVE LOAD |
IC = 20 A |
VCC = 50 V |
|
|
|
μs |
ts |
Storage Time |
VBB = -5 V |
RBB =0.6 Ω |
|
2.2 |
|
|
tf |
Fall Time |
Vclamp = 400 V |
IB1 = 4 A |
|
0.06 |
|
μs |
tc |
Cross Over Time |
L = 0.12 mH |
|
|
0.12 |
|
μs |
|
INDUCTIVE LOAD |
IC = 20 A |
VCC = 50 V |
|
|
|
μs |
ts |
Storage Time |
VBB = - 5 V |
RBB = 0.6 Ω |
|
|
3.5 |
|
tf |
Fall Time |
Vclamp = 400 V |
IB1 = 4 A |
|
|
0.12 |
μs |
tc |
Cross Over Time |
L = 0.12 mH |
TC =125oC |
|
|
0.3 |
μs |
VCEW |
Maximum Collector |
ICWoff = 30 A |
VCC = 50 V |
400 |
|
|
V |
|
Emitter Voltage |
VBB = - 5 V |
RBB = 0.6 Ω |
|
|
|
|
|
without Snubber |
L = 0.12 mH |
IB1 = 6 A |
|
|
|
|
|
|
TC =125oC |
|
|
|
|
|
3/8
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