ST BTW68 User Manual

BTW68
30 A SCRs
Features
On-state rms current: 30 A
Blocking voltage: up to 1200 V
Gate current: 50 mA
Description
Available in a high power insulated package, the BTW68 series is suitable for applications where power handling and power dissipation are critical such as solid state relays, welding equipment and high power motor control.
Based on a clip assembly technology, this device offers a superior performance in surge current handling capabilities.
Thanks to the internal ceramic pad, the device provides high voltage insulation (2500 V complies with UL standards (file ref: E81734).
RMS)
and
A
G
K
K
A
G
TOP3 ins.
Table 1. Device summary
Symbol Value
I
T(RMS)
V
DRM/VRRM
I
GT
30 A
600 to 1200 V
50 mA
July 2010 Doc ID 17757 Rev 3 1/8
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8
Characteristics BTW68
1 Characteristics
Table 2. Absolute maximum ratings (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
IT
I
dI/dt
P
T
V
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
On-state current rms (180° conduction angle) Tc = 80 °C 30 A
Average on-state current (180° conduction angle) Tc = 80 °C 19 A
(AV)
= 8.3 ms
t
Non repetitive surge peak on-state
TSM
current
²
I
tI²t Value for fusing Tj = 25 °C 800 A
Critical rate of rise of on-state current
= 2 x IGT , tr 100 ns
I
G
I
Peak gate current tp = 20 µs Tj = 125 °C 8 A
GM
Average gate power dissipation Tj = 125 °C 1 W
G(AV)
Storage junction temperature range
stg
T
Operating junction temperature range
j
Maximum peak reverse gate voltage 5 V
RGM
p
tp = 10 ms 400
F = 60 Hz T
= 25 °C
T
j
= 125 °C 100 A/µs
j
420
- 40 to + 150
- 40 to + 125
Symbol Test conditions Value Unit
I
GT
V
V
dV/dt
V
I
DRM
I
RRM
Table 4. Thermal resistance
VD = 12 V, RL = 33 Ω
GT
VD = V
t
I
I
GD
gt
H
L
DRM, RL
VD = V
DRM
IT = 500 mA, gate open MAX. 75 mA
IG = 1.2 x I
V
= 67 % V
D
= 3.3 kΩ Tj = 125 °C MIN. 0.2 V
, IG = 200 mA, dIG/dt = 1.5 A/µs TYP. 2 µs
GT
DRM
gate open
TMITM
t
q
= 60 A, tp = 380 µs MAX. 2.1 V
V
= V
DRM
VD = 67% V dI
TM
RRM
, ITM = 60 A, VR = 75 V
DRM
/dt = 30 A/µs, dVD/dt = 20 V/µs
= 800 V
V
DRM
= 1000 V 250
V
DRM
Tj = 125 °C MIN.
Tj = 25 °C
= 125 °C 6 mA
T
j
= 125 °C TYP. 100 µs
T
j
MIN. 50 mA
MAX. 1.5 V
TYP. 40 mA
500
V/µs
20 µA
MAX.
A
°C
2
S
Symbol Parameter Value Unit
R
R
Junction to case (D.C.) 1.1 °C/W
th(j-c)
Junction to ambient 50 °C/W
th(j-a)
2/8 Doc ID 17757 Rev 3
BTW68 Characteristics
Figure 1. Maximum average power
dissipation versus average on-state current
P(W)
50
40
30
α = 60°
α = 30°
20
10
0
0 5 10 15 20 25 30 35
α = 120°
α = 90°
α = 180°
I (A)
T(RMS)
D.C.
360°
α
Figure 3. Average on-state current versus case
temperature
I (A)
T(AV)
50
DC
40
30
α = 180°
Figure 2. Correlation between maximum
average power dissipation and maximum allowable temperature
P(W)
50
R = 1°C/W
th
40
30
20
R = 2°C/W
th
10
0
0 20 40 60 80 100 120 140
R = 3°C/W
th
R = 0°C/W
th
T (°C)
amb
T (°C)
α = 180°
(T and T )
amb lead
case
Figure 4. Relative variation of thermal
impedance versus pulse duration
K=[Z /R
1.00
0.10
th(j-c) th(j-c)
]
Z
th(j-c)
50
75
100
125
20
10
T (°C)
0
025 7550 100 125
case
Figure 5. Relative variation of gate trigger
current versus junction temperature
I,I,I[T] /
GT H L j
2.5
2
1.5
1
0.5
0
I ,I ,I [T =25°C]
GT H L j
I
GT
IH& I
L
T (°C)
j
-20-30-40 0 10-10 20 4030 50 60 70 80 90 100 110 120 130
Z
th(j-a)
0.01
t (s)
0.0
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3
p
Figure 6. Surge peak on-state current versus
number of cycles
I (A)
TSM
350
300
250
200
150
100
50
0
1 10 100 1000
T initial=25°C
j
Number of cycles
t =10ms
p
One cycle
Doc ID 17757 Rev 3 3/8
Characteristics BTW68
Figure 7. Non repetitive surge peak on-state
current and corresponding value of
2
I
t versus sinusoidal pulse width
2
I t
22
p
I
TSM
T initial = 25 °C
j
t (ms)
p
2
510
I (A), I t (A s)
TSM
2000
pulse with width t < 10 ms, and corresponding values of I²t
200
1
Figure 8. On-state characteristics
(maximum values)
I (A)
TM
1000
Tj=max
100
10
1
1234 56
T =25°C
j
V (V)
TM
T max.:
j
V =1.27V
t0
R =12m
d
Ω
4/8 Doc ID 17757 Rev 3
BTW68 Ordering information scheme
2 Ordering information scheme
Figure 9. Ordering information scheme
BTW 68 - 600 RG
Standard SCR series
Type
68 = 30A
Voltage
600 = 600V
800 = 800V 1000 = 100V 1200 = 1200V
Packing mode
RG = Tube
Table 5. Product Selector
Voltage (xxx)
Part numbers
600 V 800 V 1000 V 1200 V
BTW68-600RG X
BTW68-800RG X
BTW68-1000RG X
BTW68-1200RG X
Sensitivity Package
50 mA TOP3 Ins.
Doc ID 17757 Rev 3 5/8
Package information BTW68
3 Package information
Epoxy meets UL94,V0
Lead-free packages
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com ECOPACK
Table 6. TOP3 ins. dimensions
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
.
Dimensions
Ref.
H
R
ØL
A
B
A 4.4 4.6 0.173 0.181
Millimeters Inches
Min. Max. Min. Max.
B 1.45 1.55 0.057 0.061
K
G
F
C 14.35 15.60 0.565 0.614
D 0.5 0.7 0.020 0.028
E 2.7 2.9 0.106 0.114
F 15.8 16.5 0.622 0.650
G 20.4 21.1 0.815 0.831
P
C
H 15.1 15.5 0.594 0.610
J 5.4 5.65 0.213 0.222
K 3.4 3.65 0.134 0.144
JJ
D
E
ØL 4.08 4.17 0.161 0.164
P 1.20 1.40 0.047 0.055
R 4.60 typ. 0.181 typ.
6/8 Doc ID 17757 Rev 3
BTW68 Ordering information
4 Ordering information
Table 7. Ordering information
Order code Marking Package Weight Base qty Delivery mode
BTW68-600RG BTW68-600
BTW68-800RG BTW68-800
BTW68-1000RG BTW68-1000
BTW68-1200RG BTW68-1200
5 Revision history
Table 8. Document revision history
Date Revision Changes
Mar-1995 1 Initial release.
13-Feb-2006 2
29-Jul-2010 3
TOP3 ins. 4.5 g 30 Tube
TOP3 Insulated delivery mode changed from bulk to tube. ECOPACK statement added.
Deleted part number BTW68-200RG. Updated Ta bl e 2 , Figure 7 and alpha angle in Figure 1.
Doc ID 17757 Rev 3 7/8
BTW68
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8/8 Doc ID 17757 Rev 3
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