ST BTW67, BTW69 User Manual

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®
STANDARD
Table 1: Main Features
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GT
50 A
600 to 1200 V
80 mA
DESCRIPTION Available in high power packages, the BTW67 /
BTW69 Series is suitable in applications where
power handling and power dissipation are critical, such as solid state relays, welding equipment, high power motor control. Based on a clip assembly technology, they offer a superior performance in surge current handling capabilities. Thanks to their internal ceramic pad, they provide high voltage insulation (2500V
), complying
RMS
with UL standards (file ref: E81734).
BTW67 and BTW69 Series
50A SCRS
A
G
K
K
RD91
A
K
A
G
TOP3 Ins.
(BTW69)
G
(BTW67)
Table 2: Order Codes
Part Numbers Marking
BTW67-xxx BTW67xxx
BTW69-xxxRG BTW69xxx
Table 3: Absolute Ratings (limiting values)
Symbol Parameter Value Unit
= 70°C
I
T(RMS)
IT
(AV)
I
TSM
I
dI/dt
I
GM
P
G(AV)
T
T
V
RGM
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state current
²
tI²t Value for fusing
Critical rate of rise of on-state current I
, tr 100 ns
x I
GT
Peak gate current
Average gate power dissipation
stg
Storage junction temperature range Operating junction temperature range
j
Maximum peak reverse gate voltage 5 V
G
= 2
REV. 5February 2006
RD91
TOP3 Ins.
RD91
TOP3 Ins.
t
= 8.3 ms
p
= 10 ms
t
p
F = 60 Hz
= 20 µs Tj = 125°C
t
p
T
c
T
= 75°C
c
T
= 70°C
c
= 75°C
T
c
= 25°C
T
j
= 25°C
T
j
= 125°C
T
j
T
= 125°C
j
50 A
32 A
610
580
1680
50 A/µs
8A
1W
- 40 to + 150
- 40 to + 125
A
A
°C
2
S
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BTW67 and BTW69 Series
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
Symbol Test Conditions Value Unit
I
GT
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
VD = 12 V RL = 33
VD = V
RL = 3.3 k Tj = 125°C
DRM
IT = 500 mA Gate open
IG = 1.2 x I
V
= 67 % V
D
GT
Gate open Tj = 125°C
DRM
ITM = 100 A tp = 380 µs Tj = 25°C
T
Threshold voltage
Dynamic resistance
= 125°C
j
T
= 125°C
j
Tj = 25°C
V
= V
DRM
RRM
T
= 125°C
j
MIN. 8
MAX. 80
MAX. 1.3 V
MIN. 0.2 V
MAX. 150 mA
MAX. 200 mA
MIN. 1000 V/µs
MAX. 1.9 V
MAX. 1.0 V
MAX. 8.5 m
10 µA
MAX.
5mA
Table 5: Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (D.C.)
RD91 (Insulated) 1.0
TOP3 Insulated 0.9
mA
°C/W
R
th(j-a)
Junction to ambient (D.C.) TOP3 Insulated 50 °C/W
Figure 1: Maximum average power dissipation versus average on-state current
P(W)
55
50
α = 180°
45
40
35
30
25
20
15
10
5
0
0 5 10 15 20 25 30 35
I (A)
T(AV)
360°
α
Figure 2: Average and D.C. on-state current versus case temperature
I (A)
T(AV)
60
α
D.C.
= 180°
BTW67
T (°C)
case
BTW69
BTW69
BTW67
50
40
30
20
10
0
0 25 50 75 100 125
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BTW67 and BTW69 Series
Figure 3: Relative variation of thermal impedance versus pulse duration
K=[Z /R
1E+0
1E-1
1E-2
1E-3
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
th th
Z
th(j-c)
]
Z
th(j-a)
BTW69
t (s)
p
Figure 5: Surge peak on-state current versus number of cycles
I (A)
TSM
600
550
500
450
400
350
300
250
200
150
100
50
0
1 10 100 1000
Repetitive
T =75°C
C
Non repetitive T initial=25°C
j
Number of cycles
t =10ms
p
One cycle
Figure 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature
I,I,I[T] /
GT H L j
2.5
2.0
1.5
1.0
0.5
0.0
-40 -20 0 20 40 60 80 100 120 140
I ,I ,I [T =25°C]
GT H L j
I
GT
IH& I
L
T (°C)
j
Figure 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of I²t
TSM
22
dI/dt limitation
t (ms)
p
T initial = 25°C
j
I
TSM
2
I t
I (A), I t (A s)
5000
1000
100
0.01 0.10 1.00 10.00
I (A)
TM
600
100
T max.:
j
V =1.0V
t0
R =8.5m
d
Tj=max
T =25°C
10
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
j
V (V)
TM
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BTW67 and BTW69 Series
Figure 8: Ordering Information Scheme
Standard SCR series
Type
67 = 50A in RD91 69 = 50A in TOP3
Voltage
600 = 600V 800 = 800V
1200 = 1200V
Packing mode
RG = Tube Blanck = Bulk
Table 6: Product Selector
BTW 69 - 600 RG
Part Numbers
Sensitivity Package
600 V 800 V 1200 V
BTW67-xxx X X X 80 mA RD91
BTW69-xxx X X X 80 mA TOP3 Ins.
Figure 9: RD91 Package Mechanical Data
DIMENSIONS
Voltage (xxx)
L2
A2
L1
REF.
Millimeters Inches
Min. Max. Min. Max.
A 40.00 1.575
A1 29.90 30.30 1.177 1.193
B2
C
B1
A2 22.00 0.867
B 27.00 1.063
B1 13.50 16.50 0.531 0.650
C2 C1
A1
B2 24.00 0.945
C 14.00 0.551
C1 3.50 0.138
N2
E3
N1
B
F
I
A
C2 1.95 3.00 0.077 0.118
E3 0.70 0.90 0.027 0.035
F 4.00 4.50 0.157 0.177
I 11.20 13.60 0.441 0.535 L1 3.10 3.50 0.122 0.138 L2 1.70 1.90 0.067 0.075
N1 33° 43° 33° 43° N2 28° 38° 28° 38°
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Figure 10: TOP3 Insulated Package Mechanical Data
H
R
K
P
ØL
JJ
G
F
C
A
B
D
E
BTW67 and BTW69 Series
DIMENSIONS
REF.
A 4.4 4.6 0.173 0.181
B 1.45 1.55 0.057 0.061
C 14.35 15.60 0.565 0.614
D 0.5 0.7 0.020 0.028
E 2.7 2.9 0.106 0.114
F 15.8 16.5 0.622 0.650
G 20.4 21.1 0.815 0.831
H 15.1 15.5 0.594 0.610
J 5.4 5.65 0.213 0.222
K 3.4 3.65 0.134 0.144
ØL 4.08 4.17 0.161 0.164
P 1.20 1.40 0.047 0.055
R 4.60 0.181
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
.
Table 7: Ordering Information
Ordering type Marking Package Weight Base qty Delivery mode
BTW67-xxx BTW67xxx RD91 20 g 25 Bulk
BTW69-xxxRG BTW69xxx TOP3 Ins. 4.5 g 30 Tube
Note: xxx = voltage
Table 8: Revision History
Date Revision Description of Changes
Apr-2001 4A Last update.
13-Feb-2006 5
TOP3 Insulated delivery mode changed from bulk to tube. ECOPACK statement added.
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BTW67 and BTW69 Series
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2006 STMicroelectronics - All rights reserved
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