ST BTW67, BTW69 User Manual
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®
STANDARD
Table 1: Main Features
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GT
50 A
600 to 1200 V
80 mA
DESCRIPTION
Available in high power packages, the BTW67 /
BTW69 Series is suitable in applications where
power handling and power dissipation are critical,
such as solid state relays, welding equipment,
high power motor control.
Based on a clip assembly technology, they offer a
superior performance in surge current handling
capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation (2500V
), complying
RMS
with UL standards (file ref: E81734).
BTW67 and BTW69 Series
50A SCRS
A
G
K
K
RD91
A
K
A
G
TOP3 Ins.
(BTW69)
G
(BTW67)
Table 2: Order Codes
Part Numbers Marking
BTW67-xxx BTW67xxx
BTW69-xxxRG BTW69xxx
Table 3: Absolute Ratings (limiting values)
Symbol Parameter Value Unit
= 70°C
I
T(RMS)
IT
(AV)
I
TSM
I
dI/dt
I
GM
P
G(AV)
T
T
V
RGM
RMS on-state current
(180° conduction angle)
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state current
²
tI²t Value for fusing
Critical rate of rise of on-state current I
, tr ≤ 100 ns
x I
GT
Peak gate current
Average gate power dissipation
stg
Storage junction temperature range
Operating junction temperature range
j
Maximum peak reverse gate voltage 5 V
G
= 2
REV. 5February 2006
RD91
TOP3 Ins.
RD91
TOP3 Ins.
t
= 8.3 ms
p
= 10 ms
t
p
F = 60 Hz
= 20 µs Tj = 125°C
t
p
T
c
T
= 75°C
c
T
= 70°C
c
= 75°C
T
c
= 25°C
T
j
= 25°C
T
j
= 125°C
T
j
T
= 125°C
j
50 A
32 A
610
580
1680
50 A/µs
8A
1W
- 40 to + 150
- 40 to + 125
A
A
°C
2
S
1/6
BTW67 and BTW69 Series
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
Symbol Test Conditions Value Unit
I
GT
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
VD = 12 V RL = 33 Ω
VD = V
RL = 3.3 kΩ Tj = 125°C
DRM
IT = 500 mA Gate open
IG = 1.2 x I
V
= 67 % V
D
GT
Gate open Tj = 125°C
DRM
ITM = 100 A tp = 380 µs Tj = 25°C
T
Threshold voltage
Dynamic resistance
= 125°C
j
T
= 125°C
j
Tj = 25°C
V
= V
DRM
RRM
T
= 125°C
j
MIN. 8
MAX. 80
MAX. 1.3 V
MIN. 0.2 V
MAX. 150 mA
MAX. 200 mA
MIN. 1000 V/µs
MAX. 1.9 V
MAX. 1.0 V
MAX. 8.5 mΩ
10 µA
MAX.
5mA
Table 5: Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (D.C.)
RD91 (Insulated) 1.0
TOP3 Insulated 0.9
mA
°C/W
R
th(j-a)
Junction to ambient (D.C.) TOP3 Insulated 50 °C/W
Figure 1: Maximum average power dissipation
versus average on-state current
P(W)
55
50
α = 180°
45
40
35
30
25
20
15
10
5
0
0 5 10 15 20 25 30 35
I (A)
T(AV)
360°
α
Figure 2: Average and D.C. on-state current
versus case temperature
I (A)
T(AV)
60
α
D.C.
= 180°
BTW67
T (°C)
case
BTW69
BTW69
BTW67
50
40
30
20
10
0
0 25 50 75 100 125
2/6
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