ST BTA06, BTB06 User Manual

®	BTA06 and BTB06 Series

SNUBBERLESS™, LOGIC LEVEL & STANDARD

6A TRIACS

Table 1: Main Features

Symbol	Value	Unit
IT(RMS)	6	A
VDRM/VRRM	600 and 800	V
IGT (Q )	5 to 50	mA
1

DESCRIPTION

Available either in through-hole or surface-mount packages, the BTA06 and BTB06 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,...

A2

G

A1

A2

	A1	A1
	A2
		A2
	G
		G
	TO-220AB Insulated	TO-220AB
	(BTA06)	(BTB06)

The snubberless and logic level versions (BTA/ BTB...W) are specially recommended for use on inductive loads, thanks to their high commutation performances.

By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500VRMS) complying with UL standards (File ref.: E81734).

Table 2: Order Codes

Part Number	Marking
BTA06-xxxxxRG	See page table 8 on
BTB06-xxxxxRG	page 6

Table 3: Absolute Maximum Ratings

	Symbol	Parameter			Value	Unit
	IT(RMS)	RMS on-state current (full sine	TO-220AB	Tc = 110°C	6	A
		wave)
			TO-220AB Ins.	Tc = 105°C
	ITSM	Non repetitive surge peak on-state	F = 50 Hz	t = 20 ms	60	A
		current (full cycle, Tj initial = 25°C)
			F = 60 Hz	t = 16.7 ms	63
	I²t	I²t Value for fusing	tp = 10 ms		21	A²s
	dI/dt	Critical rate of rise of on-state cur-	F = 120 Hz	Tj = 125°C	50	A/µs
		rent IG = 2 x IGT , tr ≤ 100 ns
	IGM	Peak gate current	tp = 20 µs	Tj = 125°C	4	A
	PG(AV)	Average gate power dissipation		Tj = 125°C	1	W
	Tstg	Storage junction temperature range			- 40 to + 150	°C
	Tj	Operating junction temperature range			- 40 to + 125
	February 2006		REV. 6			1/7

BTA06 and BTB06 Series

Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)

■ SNUBBERLESS and Logic Level (3 quadrants)

Symbol

Test Conditions

Quadrant

BTA06 / BTB06

Unit

TW

SW

CW

BW

IGT (1)

VD = 12 V RL = 30 Ω

I - II - III

MAX.

5

10

35

50

mA

VGT

I - II - III

MAX.

1.3

V

VGD

VD = VDRM

RL = 3.3 kΩ

I - II - III

MIN.

0.2

V

Tj = 125°C

IH (2)

IT = 100 mA

MAX.

10

15

35

50

mA

IL

IG = 1.2 IGT

I - III

MAX.

10

25

50

70

mA

II

15

30

60

80

dV/dt (2)

VD = 67 %VDRM gate open Tj = 125°C

MIN.

20

40

400

1000

V/µs

(dV/dt)c = 0.1 V/µs

Tj = 125°C

2.7

3.5

-

-

(dI/dt)c (2)

(dV/dt)c = 10 V/µs

Tj = 125°C

MIN.

1.2

2.4

-

-

A/ms

Without snubber

Tj = 125°C

-

-

3.5

5.3

■ Standard (4 quadrants)

Symbol

Test Conditions

Quadrant

BTA06 / BTB06

Unit

C

B

IGT (1)

I - II - III

MAX.

25

50

mA

VD = 12 V

RL = 30 Ω

IV

50

100

VGT

ALL

MAX.

1.3

V

VGD

VD = VDRM

RL = 3.3 kΩ Tj = 125°C

ALL

MIN.

0.2

V

IH (2)

IT = 500 mA

MAX.

25

50

mA

IL

IG = 1.2 IGT

I - III - IV

MAX.

40

50

mA

II

80

100

dV/dt (2)

VD = 67 %VDRM gate open Tj = 125°C

MIN.

200

400

V/µs

(dV/dt)c (2)

(dI/dt)c = 2.7 A/ms

Tj

= 125°C

MIN.

5

10

V/µs

Table 5: Static Characteristics

Symbol

Test Conditions

Value

Unit

VTM (2)

ITM = 8.5 A

tp = 380 µs

Tj = 25°C

MAX.

1.55

V

Vt0 (2)

Threshold voltage

Tj = 125°C

MAX.

0.85

V

Rd (2)

Dynamic resistance

Tj = 125°C

MAX.

60

mΩ

IDRM

VDRM = VRRM

Tj = 25°C

MAX.

5

µA

IRRM

Tj = 125°C

1

mA

Note 1: minimum IGT is guaranted at 5% of IGT max.

Note 2: for both polarities of A2 referenced to A1.

2/7

BTA06 and BTB06 Series

Table 6: Thermal resistance

Symbol		Parameter		Value	Unit
Rth(j-c)	Junction to case (AC)		TO-220AB	1.8	°C/W
			TO-220AB Insulated	2.7
Rth(j-a)	Junction to ambient		TO-220AB	60	°C/W
			TO-220AB Insulated

Figure 1: Maximum power dissipation versus RMS on-state current (full cycle)

P(W)
8
7
6
5
4
3
2
1			IT(RMS)(A)
0
0	1	2	3	4	5	6

Figure 2: RMS on-state current versus case temperature (full cycle)

IT(RMS)(A)
7
					BTB
6
				BTA
5
4
3
2
1			TC(°C)
0
0	25	50	75	100	125

Figure 3: Relative variation of thermal impedance versus pulse duration

K=[Zth/Rth]
1E+0
	Zth(j-c)
			Zth(j-a)
1E-1
1E-2			tp(s)
1E-3	1E-2	1E-1	1E+0	1E+1	1E+2	5E+2

Figure 4: On-state characteristics (maximum values)

ITM(A)

100
	Tj max.			Tj = Tj max.
	Vt0 = 0.85V
	Rd = 60 mΩ
10
1				VTM(V)
0.5	1.0	1.5	2.0	2.5	3.0	3.5	4.0	4.5	5.0

3/7