BTA24, BTB24, BTA25
BTA26, BTB26, T25
25 A standard and Snubberless™ triacs
Features
■High current triac
■Low thermal resistance with clip bonding
■High commutation (4 quadrant) or very high commutation (3 quadrant) capability
■BTA series UL1557 certified (File ref: 81734)
■Packages are RoHS (2002/95/EC) compliant
Applications
Applications include the ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits, etc., or for phase control operation in light dimmers, motor speed controllers, and silmilar.
The snubberless versions (BTA/BTB...W and T25 series) are especially recommended for use on inductive loads, due to their high commutation performances. The BTA series provides an insulated tab (rated at 2500 VRMS).
Description
Available either in through-hole or surface-mount packages, the BTA24, BTB24, BTA25, BTA26, BTB26 and T25 triac series is suitable for general purpose mains power AC switching.
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A2 |
G |
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A1 |
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A2 |
A1 |
A1 |
A2 |
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G |
A2G |
TO-220AB Insulated |
TO-220AB |
(BTA24) (BTB24)
A1
G A2
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A1 |
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A2 |
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G |
RD91 |
TOP3 Insulated |
(BTA25) (BTA26)
A2
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A2 |
A1 |
A2 |
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G |
A1 |
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A2 |
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G |
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D2PAK |
TOP3 |
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(T25) |
(BTB26) |
Table 1. |
Device summary |
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Symbol |
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Parameter |
BTA24(1) |
BTB24 |
BTA25(1) |
BTA26(1) |
BTB26 |
T25 |
Unit |
IT(RMS) |
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RMS on-state |
25 |
25 |
25 |
25 |
25 |
25 |
A |
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current |
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VDRM/VRRM |
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Repetitive peak |
600 / 800 |
600 / 800 |
600 / 800 |
600(2) / 800 |
600 |
600 / 800 |
V |
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off-state voltage |
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I |
(Snubberless) |
Triggering gate |
35 / 50 |
35 / 50 |
50 |
35 / 50 |
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35 |
mA |
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GT |
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current |
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IGT (Standard) |
Triggering gate |
- |
50 |
50 |
50 |
50 |
- |
mA |
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current |
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1.Insulated packages
2.600 V version available only with IGT = 50 mA (Snubberless and Standard)
TM: Snubberless is a trademark of STMicroelectronics
July 2007 |
Rev 10 |
1/12 |
www.st.com
Characteristics |
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BTA24, BTB24, BTA25, BTA26, BTB26, T25 |
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1 |
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Characteristics |
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Table 2. |
Absolute maximum ratings |
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Symbol |
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Parameter |
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Value |
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Unit |
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TOP3 |
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Tc = 105° C |
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D2PAK / |
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Tc = 100° C |
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IT(RMS) |
RMS on-state current (full sine wave) |
TO-220AB |
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25 |
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A |
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RD91 Ins/ |
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Tc = 100° C |
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TOP3 Ins. |
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TO-220AB Ins. |
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Tc = 75° C |
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ITSM |
Non repetitive surge peak on-state |
F = 50 Hz |
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t = 20 ms |
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250 |
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A |
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current (full cycle, Tj initial = 25° C) |
F = 60 Hz |
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t = 16.7 ms |
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260 |
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I²t |
I²t Value for fusing |
tp = 10 ms |
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340 |
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A²s |
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dI/dt |
Critical rate of rise of on-state current |
F = 120 Hz |
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Tj = 125° C |
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50 |
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A/µs |
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IG = 2 x IGT , tr ≤ 100 ns |
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VDSM/VRSM |
Non repetitive surge peak off-state |
tp = 10 ms |
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Tj = 25° C |
VDRM/VRRM |
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V |
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voltage |
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+ 100 |
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IGM |
Peak gate current |
tp = 20 µs |
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Tj = 125° C |
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4 |
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A |
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PG(AV) |
Average gate power dissipation |
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Tj = 125° C |
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1 |
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W |
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Tstg |
Storage junction temperature range |
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- 40 to + 150 |
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° C |
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Tj |
Operating junction temperature range |
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- 40 to + 125 |
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Table 3. |
Electrical characteristics (Tj = 25° C, unless otherwise specified), Snubberless and |
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logic level (3 quadrants) T25, BTA/BTB24...W, BTA25...W, BTA26...W |
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Symbol |
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Test Conditions |
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Quadrant |
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T25 |
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BTA/BTB |
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Unit |
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T2535 |
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CW |
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BW |
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(1) |
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I - II - III |
MAX. |
35 |
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35 |
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50 |
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mA |
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IGT |
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VD = 12 V RL = 33 Ω |
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VGT |
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I - II - III |
MAX. |
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1.3 |
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V |
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VGD |
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VD = VDRM |
RL = 3.3 kΩ |
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I - II - III |
MIN. |
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0.2 |
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V |
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Tj = 125° C |
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I (2) |
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= 500 mA |
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MAX. |
50 |
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50 |
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75 |
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mA |
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T |
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IL |
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IG = 1.2 IGT |
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I - III |
MAX. |
70 |
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70 |
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80 |
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mA |
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II |
80 |
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80 |
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100 |
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dV/dt (2) |
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D |
= 67 %V |
DRM |
gate open |
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T = 125° C |
MIN. |
500 |
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500 |
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1000 |
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V/µs |
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j |
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(dI/dt)c (2) |
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Without snubber |
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T = 125° C |
MIN. |
13 |
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13 |
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22 |
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A/ms |
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j |
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1.minimum IGT is guaranted at 5% of IGT max.
2.for both polarities of A2 referenced to A1.
2/12
BTA24, BTB24, BTA25, BTA26, BTB26, T25 |
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Characteristics |
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Table 4. |
Electrical characteristics (Tj = 25° C, unless otherwise specified), |
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standard (4 quadrants), BTB24...B, BTA25...B, BTA26...B, BTB26...B |
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Symbol |
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Test Conditions |
Quadrant |
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Value |
Unit |
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(1) |
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I - II - III |
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50 |
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IGT |
VD = 12 V |
RL = 33 Ω |
IV |
MAX. |
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100 |
mA |
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VGT |
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ALL |
MAX. |
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1.3 |
V |
VGD |
VD = VDRM |
RL = 3.3 kΩ Tj = 125° C |
ALL |
MIN. |
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0.2 |
V |
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IH(2)) |
IT = 500 mA |
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MAX. |
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80 |
mA |
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IL |
IG = 1.2 IGT |
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I - III - IV |
MAX. |
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70 |
mA |
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II |
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160 |
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dV/dt(2) |
V |
D |
= 67 %V |
DRM |
gate open |
T = 125° C |
MIN. |
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500 |
V/µs |
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j |
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(dV/dt)c (2) |
(dI/dt)c = 13.3 A/ms |
T = 125° C |
MIN. |
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V/µs |
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j |
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1.minimum IGT is guaranted at 5% of IGT max.
2.for both polarities of A2 referenced to A1.
Table 5. |
Static characteristics |
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Symbol |
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Test Conditions |
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Value |
Unit |
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(1) |
ITM = 35 A |
tp = 380 µs |
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Tj = 25° C |
MAX. |
1.55 |
V |
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VTM |
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Vt0 |
(1) |
Threshold voltage |
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Tj = 125° C |
MAX. |
0.85 |
V |
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R |
(1) |
Dynamic resistance |
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T |
= 125° C |
MAX. |
16 |
mΩ |
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d |
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IDRM |
VDRM = VRRM |
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Tj = 25° C |
MAX. |
5 |
µA |
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IRRM |
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Tj = 125° C |
3 |
mA |
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1. for both polarities of A2 referenced to A1.
Table 6. |
Thermal resistance |
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TOP 3 |
0.6 |
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Rth(j-c) |
Junction to case (AC) |
D2PAK / TO-220AB |
0.8 |
° C/W |
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RD91 Insulated / TOP3 Insulated |
0.9 |
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TO-220AB Insulated |
1.7 |
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(1)S = 1 cm² |
D2PAK |
45 |
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Rth(j-a) |
Junction to ambient |
TOP3 / TOP3 Insulated |
50 |
° C/W |
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TO-220AB / TO-220AB Insulated |
60 |
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1. S = Copper surface under tab.
3/12
Characteristics |
BTA24, BTB24, BTA25, BTA26, BTB26, T25 |
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Figure 1. Maximum power dissipation versus |
Figure 2. RMS on-state current versus case |
RMS on-state current (full cycle) |
temperature (full cycle) |
P(W) |
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IT(RMS)(A) |
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30 |
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30 |
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25 |
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BTB26 |
25 |
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BTA24 |
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20 |
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20 |
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15 |
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15 |
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BTB24 / T25xx / |
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BTA25 / BTA26 |
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10 |
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10 |
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5 |
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5 |
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0 |
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IT(RMS)(A) |
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TC(°C) |
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0 |
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0 |
5 |
10 |
15 |
20 |
25 |
0 |
25 |
50 |
75 |
100 |
125 |
Figure 3. D2PAK RMS on-state current versus Figure 4. |
Relative variation of thermal |
ambient temperature (printed |
impedance versus pulse |
circuit board FR4, copper |
duration |
thickness: 35µm) (full cycle) |
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IT(RMS)(A) |
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K=[Zth/Rth] |
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4.0 |
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1E+0 |
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3.5 |
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D2PAK |
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Zth(j-c) |
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(S=1cm2) |
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3.0 |
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2.5 |
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1E-1 |
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Zth(j-a) |
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BTA / BTB24 / T25 |
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2.0 |
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1.5 |
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1E-2 |
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Zth(j-a) |
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1.0 |
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BTA26 |
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0.5 |
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Tamb(°C) |
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tp(s) |
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0.0 |
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1E-3 |
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0 |
25 |
50 |
75 |
100 |
125 |
1E-3 |
1E-2 |
1E-1 |
1E+0 |
1E+1 |
1E+2 |
5E+2 |
Figure 5. On-state characteristics |
Figure 6. Surge peak on-state current |
(maximum values) |
versus number of cycles |
ITM(A) |
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ITSM(A) |
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300 |
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300 |
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Tj max. |
Tj = Tj max. |
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Vto = 0.85V |
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250 |
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100 |
Rd = 16 mΩ |
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t=20ms |
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200 |
Non repetitive |
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One cycle |
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Tj initial=25°C |
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150 |
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10 |
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Tj = 25°C. |
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Repetitive |
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100 |
TC=75°C |
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50 |
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VTM(V) |
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Number of cycles |
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1 |
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0 |
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0.5 |
1.0 |
1.5 |
2.0 |
2.5 |
3.0 |
3.5 |
4.0 |
4.5 |
1 |
10 |
100 |
1000 |
4/12