ST BTA12, BTB12 User Manual

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12 A Snubberless™, logic level and standard triacs

BTA12, BTB12, T12xx

Features

■ Medium current triac

■ Low thermal resistance with clip bonding

■ Low thermal resistance insulation ceramic for

insulated BTA

■ High commutation (4Q) or very high

commutation (3Q) capability

■ BTA series UL1557 certified (File ref: 81734)

■ Packages are RoHS ( 2002/95/EC) compliant

Applications

ON/OFF or phase angle function in applications such as static relays, light dimmers and appliance motors speed controllers.

The snubberless versions (BTA/BTB...W and T12 series) are especially recommended for use on inductive loads, because of their high commutation performances. The BTA series provides an insulated tab (rated at 2500 V RMS).

Description

A2

G

A1

A2

A1

A2

G

D2PAK

(T12-G)

A1

A2

G

TO-220AB Insulated

(BTA12)

A1

A2

G

I

(T12-R)

A1

A2

G

TO-220AB

(BTB12)

2

PAK

Order code

See Ordering information on page 11

A2

Available either in through-hole or surface-mount packages, the BTA12, BTB12 and T12xx triac series is suitable for general purpose mains power AC switching.

Table 1. Device summary

Symbol Parameter T12xx BTA12

I

T(RMS)

V

DRM/VRRM

(Snubberless) Triggering gate current 10/35/50 5/10/35/50 5/10/35/50

I

GT

I

(Standard) Triggering gate current - 35/50 35/50

GT

1.

Insulated

TM: Snubberless is a trademark of STMicroelectronics

RMS on-state current 12 12 12

Repetitive peak off-state voltage 600/800 600/800 600/800

September 2007 Rev 9 1/12

(1)

BTB12

www.st.com

12

Characteristics BTA12, BTB12, T12xx

1 Characteristics

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

2

I

PAK / D2PA K /

I

T(RMS)

RMS on-state current (full sine wave)

TO-220AB

TO-220AB Ins. Tc = 90° C

I

TSM

2

I

dI/dt

V

DSM/VRSM

I

GM

P

G(AV)

T

stg

T

Table 3. Electrical characteristics (Tj = 25°C, unless otherwise specified)

Non repetitive surge peak on-state current (full cycle, T

tI

2

t Value for fusing tp = 10 ms 78 A²s

initial = 25° C)

j

Critical rate of rise of on-state current

= 2 x IGT , tr ≤ 100 ns

I

G

Non repetitive surge peak off-state voltage

Peak gate current tp = 20 µs Tj = 125° C 4 A

Average gate power dissipation Tj = 125° C 1 W

Storage junction temperature range Operating junction temperature range

j

Snubberless and logic level (3 quadrants)

F = 50 Hz t = 20 ms 120

F = 60 Hz t = 16.7 ms 126

F = 120 Hz T

= 10 ms Tj = 25° C

t

p

= 105° C

T

c

= 125° C 50 A/µs

j

12 A

V

DRM/VRRM

+ 100

- 40 to + 150

- 40 to + 125

A

V

°C

Symbol Test conditions Quadrant

(1)

I

GT

V

I

GT

GD

H

(2)

VD = 12 V

= 30 Ω

R

L

VD = V

= 3.3 kΩ

R

L

= 125° C

T

j

DRM

IT = 100 mA MAX. 15 35 50 10 15 35 50 mA

I - II - III MAX. 10 35 50 5 10 35 50 mA

I - II - III MAX. 1.3 V

I - II - III MIN. 0.2 V

I - III

I

L

dV/dt

(2)

IG = 1.2 I

GT

VD = 67 %V Tj = 125° C

gate open

DRM

II 30 60 80 15 30 60 80

(dV/dt)c = 0.1 V/µs Tj = 125° C

(dV/dt)c = 10 V/µs

(dI/dt)c

(2)

= 125° C

T

j

Without snubber

= 125° C

T

j

1. Minimum IGT is guaranted at 5% of IGT max

2. for both polarities of A2 referenced to A1

T12xx BTA12 / BTB12

Unit

T1210 T1235 T1250 TW SW CW BW

25 50 70 10 25 50 70

MAX.

mA

MIN. 40 500 1000 20 40 500 1000 V/µs

6.5 3.5 6.5

MIN.

2.9 1 2.9

A/ms

6.5 12 6.5 12

2/12

BTA12, BTB12, T12xx Characteristics

Table 4. Electrical characteristics (Tj = 25°C, unless otherwise specified)

standard (4 quadrants)

BTA12 / BTB12

Symbol Test Conditions Quadrant

CB

Unit

(1)

I

GT

V

GT

V

GD

(2)

I

H

I

L

dV/dt

(dV/dt)c

1. Minimum IGT is guaranted at 5% of IGT max.

2. for both polarities of A2 referenced to A1.

Table 5. Static characteristics

VD = 12 V RL = 30 Ω

VD = V

RL = 3.3 kΩ Tj = 125° C ALL MIN. 0.2 V

DRM

IT = 500 mA MAX. 25 50 mA

IG = 1.2 I

(2)

VD = 67% V

(2)

(dI/dt)c = 5.3 A/ms Tj = 125° C MIN. 5 10 V/µs

GT

gate open Tj = 125° C MIN. 200 400 V/µs

DRM

I - II - III

IV

MAX.

ALL MAX. 1.3 V

I - III - IV

MAX.

II 80 100

25 50

50

100

40 50

Symbol Test conditions Value Unit

(1)

V

T

V

t0

R

d

I

DRM

I

RRM

1. for both polarities of A2 referenced to A1

Table 6. Thermal resistance

ITM = 17 A tp = 380 µs Tj = 25° C MAX. 1.55 V

(1)

Threshold voltage Tj = 125° C MAX. 0.85 V

(1)

Dynamic resistance Tj = 125° C MAX. 35 mΩ

Tj = 25° C

V

DRM

= V

RRM

= 125° C 1 mA

T

j

MAX.

5µA

mA

Symbol Parameter Value Unit

2

I

R

th(j-c)

Junction to case (AC)

Junction to ambient S

R

th(j-a)

1. Copper surface under tab.

(1)

= 1 cm

PAK / D2PAK / TO-220AB 1.4

TO-220AB insulated 2.3

2

D2PA K 4 5

TO-220AB / I

2

PA K

TO-220AB insulated

60

3/12

°C/W

Characteristics BTA12, BTB12, T12xx

Figure 1. Maximum power dissipation versus

RMS on-state current (full cycle)

P(W)

16

14

12

10

8

6

4

2

0

0 1 2 3 4 5 6 7 8 9 10 11 12

I (A)

T(RMS)

Figure 3. RMS on-state current versus

ambient temperature (printed circuit board FR4, copper thickness: 35µm) (full cycle)

I (A)

T(RMS)

3.5

2

3.0

2.5

2.0

1.5

1.0

0.5

0.0 0 25 50 75 100 125

T (°C)

C

DPAK

(S=1cm )

2

Figure 2. RMS on-state current versus case

temperature (full cycle)

I (A)

T(RMS)

14 13

12

11

10

9 8 7 6 5

4 3

2 1 0

0

25 50 75 100 125

T (°C)

C

BTB / T12

BTA

Figure 4. Relative variation of thermal

impedance versus pulse duration

K=[Z /R

1E+0

1E-1

1E-2

1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

th th

Z

th(j-c)

]

Z

th(j-a)

t (s)

p

Figure 5. On-state characteristics (maximum

values)

I (A)

TM

100

T max.

j

V = 0.85V

to

Ω

R = 35 m

d

T=jT max.

j

10

1

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

4/12

T = 25°Cj.

V (V)

TM

Figure 6. Surge peak on-state current versus

number of cycles

I (A)

TSM

130 120 110 100

90 80 70 60

Repetitive

T =90°C

50 40 30 20 10

0

C

1

Non repetitive T initial=25°C

j

Number of cycles

10 100 1000

t=20ms

One cycle