ST BTA10 GP User Manual
BTA10GP
BTA10 GP
TRIACS
.FEATURES
.LOW IH = 13mA max
.HIGH SURGE CURRENT : ITSM = 120A
.IGT SPECIFIED IN FOUR QUADRANTS
INSULATING VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
A1
A2 G
The BTA10 GP's use high performance, glass pas- |
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sivated chips. |
TO220AB |
The insulated TO220AB package, the high surge |
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current and low holding current make this family |
(Plastic) |
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well adapted to LIGHT DIMMER applications. |
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ABSOLUTE RATINGS (limiting values) |
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Symbol
IT(RMS)
ITSM
I2t
dI/dt
Parameter |
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Value |
Unit |
RMS on-state current |
Tc = 90 °C |
10 |
A |
(360° conduction angle) |
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Non repetitive surge peak on-state current |
tp = 8.3 ms |
126 |
A |
( Tj initial = 25°C ) |
tp = 10 ms |
120 |
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I2t value |
tp = 10 ms |
72 |
A2s |
Critical rate of rise of on-state current |
Repetitive |
10 |
A/μs |
Gate supply : IG = 500mA diG/dt = 1A/μs |
F = 50 Hz |
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Non |
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50 |
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Repetitive |
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Tstg |
Storage and operating junction temperature range |
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- |
40 |
to + 150 |
°C |
Tj |
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- |
40 |
to + 125 |
°C |
Tl |
Maximum lead temperature for soldering during 10 s at |
4.5 mm |
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260 |
°C |
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from case |
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Symbol |
Parameter |
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BTA10- |
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Unit |
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400 GP |
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600 GP |
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VDRM |
Repetitive peak off-state voltage |
400 |
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600 |
V |
VRRM |
Tj = 125 °C |
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March 1995 |
1/4 |
BTA10 GP
THERMAL RESISTANCES
Symbol |
Parameter |
Value |
Unit |
Rth (j-a) |
Junction to ambient |
60 |
°C/W |
Rth (j-c) DC |
Junction to case for DC |
4 |
°C/W |
Rth (j-c) AC |
Junction to case for 360° conduction angle |
3 |
°C/W |
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( F= 50 Hz) |
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GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W PGM = 10W (tp = 20 μs) IGM = 4A (tp = 20 μs) VGM = 16V (tp = 20 μs).
ELECTRICAL CHARACTERISTICS
Symbol |
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Test Conditions |
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Quadrant |
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Suffix |
Unit |
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GP |
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IGT |
VD=12V |
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(DC) RL=33Ω |
Tj=25°C |
I-II-III |
MAX |
50 |
mA |
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IV |
MAX |
75 |
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VGT |
VD=12V |
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(DC) RL=33Ω |
Tj=25°C |
I-II-III-IV |
MAX |
1.5 |
V |
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VGD |
VD=VDRM RL=3.3kΩ |
Tj=110°C |
I-II-III-IV |
MIN |
0.2 |
V |
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tgt |
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VD=VDRM |
IG = 500mA |
Tj=25°C |
I-II-III-IV |
TYP |
2 |
μs |
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dIG/dt = 3A/μs |
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IL |
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IG=1.2 IGT |
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Tj=25°C |
I-III-IV |
TYP |
20 |
mA |
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II |
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40 |
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IH |
* |
IT= 100mA |
gate open |
Tj=25°C |
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MAX |
13 |
mA |
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VTM |
* |
ITM= 14A |
tp= 380μs |
Tj=25°C |
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MAX |
1.5 |
V |
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IDRM |
VDRM |
Rated |
Tj=25°C |
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MAX |
0.01 |
mA |
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IRRM |
VRRM |
Rated |
Tj=110°C |
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MAX |
0.5 |
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dV/dt |
* |
Linear slope up to VD=67%VDRM |
Tj=110°C |
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MIN |
30 |
V/μs |
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gate open |
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TYP |
100 |
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(dV/dt)c * |
(dI/dt)c= 2.2A/ms |
Tj=110°C |
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MIN |
1 |
V/μs |
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TYP |
10 |
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* For either polarity of electrode A2 voltage with reference to electrode A1.
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