ST BTA06, BTB06 User Manual
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BTA/BTB06 Series
SNUBBERLESS™, LOGIC LEVEL & STANDARD 6A TRIACS
MAIN FEATURES:
A2
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
G (Q1)
6A
600 and 800 V
5 to 50 mA
G
A1
A2
DESCRIPTION
Suitable for AC switching operations, the BTA/
BTB06 series can be used as an ON/OFF function
in applications such as static relays, heating
regulation, induction motor starting circuits... or for
phase control in light dimmers, motor speed
A1
A2
G
TO-220AB Insulated
(BTA06)
A1
A2
G
TO-220AB
(BTB06)
controllers,...
The snubberless and logic level versions (BTA/
BTB...W) are specially recommended for use on
inductive loads, than ks to their high com mutation
performances. By usin g an internal ceramic pa d,
the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
I
T(RMS)
I
TSM
²
I
dI/dt
I
GM
P
G(AV)
T
stg
T
April 2002 - Ed: 5A
RMS on-state current (full sine wave) TO-220AB Tc = 110°C
TO-220AB Ins. Tc = 105°C
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
tI
²
t Value for fusing
Critical rate of rise of on-state current
I
= 2 x IGT , tr ≤ 100 ns
G
F = 50 Hz t = 20 ms 60 A
F = 60 Hz t = 16.7 ms 63
tp = 10 ms 21
F = 120 Hz Tj = 125°C 50 A/µs
Peak gate current tp = 20 µs Tj = 125°C 4 A
Average gate power dissipation Tj = 125°C 1 W
Storage junction temperature range
Operating junction temp erature range
j
- 40 to + 150
- 40 to + 125
6
A
A
°C
²
s
1/6
BTA/BTB06 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
Symbol Test Conditions Quadrant BTA/BTB06
TW SW CW BW
I
(1)
GT
V
V
GT
GD
= 12 V RL = 30 Ω
V
D
VD = V
RL = 3.3 kΩ
DRM
Tj = 125°C
I
(2)
H
I
L
dV/dt (2) V
= 100 mA
I
T
I
= 1.2 I
G
= 67 %V
D
GT
gate open
DRM
Tj = 125°C
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C MIN. 2.7 3.5 - - A/ms
(dV/dt)c = 10 V/µs Tj = 125°C 1.2 2.4 - Without snubber
■ ST ANDARD (4 Quadrants)
Tj = 125°C - - 3.5 5.3
Symbol Test Conditions Quadrant BTA/BTB06
(1)
I
G
V
GT
V
GD
I
(2)
H
I
L
dV/dt (2) V
= 12 V RL = 30 Ω
V
D
VD = V
= 500 mA
I
T
IG = 1.2 I
= 67 %V
D
RL = 3.3 kΩ Tj = 125°C
DRM
GT
DRM
gate open Tj = 125°C
(dV/dt)c (2) (dI/dt)c = 2.7 A/ms
I - II - III MAX. 5 10 35 50
I - II - III MAX. 1.3 V
I - II - III MIN. 0.2
MAX.10153550mA
I - III MAX. 10 25 50 70 mA
II 15 30 60 80
MIN. 20 40 400 1000 V/µs
CB
I - II - III
IV
MAX.
25
50
50
100
ALL MAX. 1.3 V
ALL MIN.
0.2 V
MAX. 25 50 mA
I - III - IV MAX. 40 50 mA
II 80 100
MIN. 200 400 V/µs
Tj = 125°C MIN. 5 10 V/µs
Unit
mA
V
Unit
mA
STATIC CHARACTERISTICS
Symbol Test Conditions Value Unit
V
(2) ITM = 5.5 A tp = 380 µs
T
(2)
V
to
(2)
R
d
I
DRM
I
RRM
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
Threshold voltage Tj = 125°C MAX. 0.85 V
Dynamic resistance Tj = 125°C MAX. 60 mΩ
V
= V
DRM
RRM
2/6
Tj = 25°C MAX. 1.55 V
Tj = 25°C
Tj = 125°C 1 mA
MAX.
5µA
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