查询BC107供应商
LOW NOISE GENERAL PURPOSE AUDIOAMPLIFIERS
DESCRIPTION
The BC107 and BC108 are silicon planar
epitaxial NPN transistors in TO-18 metal case.
They are suitable for use in driver stages, low
noise inputstages and signal processing circuits
of television reveivers. The PNP complemet for
BC107 is BC177.
BC107
BC108
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
BC107 BC108
V
V
V
P
T
Collector-Base Voltage (IE=0) 50 30 V
CBO
Collector-Emitter Voltage (IB=0) 45 20 V
CEO
Emitter-Base Voltage (IC=0) 6 5 V
EBO
Collect or Current 100 mA
I
C
Total Dissipat ion at T
tot
Stora ge T emperatu re -55 to 175
stg
Max. Oper at i ng Juncti on Temperatu r e 175
T
j
at T
amb
case
≤ 25oC
≤ 25oC
0.3
0.75
o
o
W
W
C
C
November 1997
1/6
BC107/BC108
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Resist ance Junctio n- Case Max
Thermal Resistance Junction-Ambient Max
200
500
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
CBO
Collector Cut -off
Current (I
E
=0)
for B C107
VCB=40V
=40V T
V
CB
cas e
=150oC
15
15
for B C108
=20V
V
CB
=20V T
V
CB
V
(BR)CBO
V
(BR) CEO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
Collector-Base
Break dow n Voltage
(IE = 0)
∗ Collect or- E mitter
Break dow n Voltage
=0)
(I
B
Emitt er-Base
Break dow n Voltage
=0)
(I
C
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitt er
Saturation Voltage
∗ Base-Emitt er O n
Volt age
IC=10µA
for B C107
for B C108
I
=10mA
C
for B C107
for B C108
I
=10µA
E
for B C107
for B C108
IC=10mA IB=0.5mA
=100mA IB=5mA
I
C
IC=10mA IB=0.5mA
I
=100mA IB=5mA
C
IC=2mA VCE=5V
=10mA VCE=5V
I
C
∗ DC C urrent Gain IC=2mA VCE=5V
for B C107
for B C107 Gr. A
for B C107 Gr. B
for B C108
for B C108 Gr. A
for B C108 Gr. B
for B C108 Gr. C
=10µAVCE=5V
I
C
for B C107
for B C107 Gr. A
for B C107 Gr. B
for B C108
for B C108 Gr. A
for B C108 Gr. B
for B C108 Gr. C
∗ Small Signal Cur r ent
h
fe
Gain
IC=2mA VCE=5V f=1KHz
for B C107
for B C107 Gr. A
for B C107 Gr. B
for B C108
for B C108 Gr. A
for B C108 Gr. B
for B C108 Gr. C
=10mA VCE= 10 V f = 100 MH z
I
C
∗
Pulsed: Pulse duration = 300µs, duty cycle ≤ 1%
cas e
=150oC
50
30
45
20
6
5
70
200
750
950
550 650
700
110
110
200
110
110
200
420
120
90
40
150
120
90
40
100
150
270
250
190
300
370
190
300
500
2
15
15
250
600
700
770
450
220
450
800
220
450
800
nA
µA
µA
µA
V
V
V
V
V
V
mV
mV
mV
mV
mV
mV
2/6
BC107/BC108
ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
C
CBO
C
EBO
NF Noise Figure I
h
h
h
∗
Pulsed: Pulse duration = 300µs, duty cycle ≤ 1%
Collector Bas e
IE=0 VCB=10V f=1MHz 4 6 pF
Capacit a nc e
Emitt er Base
IC=0 VEB=0.5V f=1MHz 12 pF
Capacit a nc e
=0.2mA VCE=5V
C
f=1KHz R
Input Im p edanc e IC=2mA VCE=5V f=1KHz
ie
=2KΩ B = 200Hz
g
for B C107
for B C107 Gr. A
for B C107 Gr. B
for B C108
for B C108 Gr. A
for B C108 Gr. B
for B C108 Gr. C
Reverse Voltage Rati o IC=2mA VCE=5V f=1KHz
re
for B C107
for B C107 Gr. A
for B C107 Gr. B
for B C108
for B C108 Gr. A
for B C108 Gr. B
for B C108 Gr. C
Out put Ad m it t a nce IC=2mA VCE=5V f=1KHz
oe
for B C107
for B C107 Gr. A
for B C107 Gr. B
for B C108
for B C108 Gr. A
for B C108 Gr. B
for B C108 Gr. C
210dB
4
3
4.8
5.5
3
4.8
7
2.2
1.7
2.7
3.1
1.7
2.7
3.8
30
13
26
30
13
26
34
KΩ
KΩ
KΩ
KΩ
KΩ
KΩ
KΩ
10
10
10
10
10
10
10
µS
µS
µS
µS
µS
µS
µS
-4
-4
-4
-4
-4
-4
-4
DCNormalizedCurrent Gain. Collector--emitter Saturation Voltage.
3/6
BC107/BC108
Collector-baseCapacitance. TransitionFrequency.
PowerRatingChart.
4/6
TO-18 MECHANICAL DATA
BC107/BC108
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 5.3 0.208
E 4.9 0.193
F 5.8 0.228
G 2.54 0.100
H 1.2 0.047
I 1.16 0.045
L45
o
mm inch
o
45
G
I
H
DA
F
E
L
B
C
0016043
5/6
BC107/BC108
Information furnished is believed tobe accurateand reliable. However,SGS-THOMSON Microelectronicsassumes no responsability for the
consequencesof use ofsuch information norfor any infringement of patentsor other rightsof third parties whichmay resultsfrom its use. No
licenseis grantedby implicationor otherwise underany patentor patentrights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in this publicationare subjectto change withoutnotice.This publication supersedes and replacesall informationpreviously supplied.
SGS-THOMSONMicroelectronics productsare notauthorizedfor useascriticalcomponents in lifesupportdevices or systems withoutexpress
writtenapproval of SGS-THOMSON Microelectonics.
1997SGS-THOMSONMicroelectronics - Printedin Italy - AllRights Reserved
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